Pub Date : 2026-01-14DOI: 10.1016/j.micrna.2026.208572
Xing Wang , Yifei Wang , Guanyu Wang , Chunyu Zhou , Bo Ye , Song Shi
In this work, the impact of additional uniaxial stress on both D-mode and E-mode GaN HEMTs has been investigated. It develops an equivalent conversion model linking additional stress to the Al composition in AlGaN barrier layers, validated through theoretical calculations and TCAD simulations. Using this model, the TCAD tool was employed to analyze the effects of varying stress types and magnitudes on device performance. Simulations revealed that applying a 2 GPa uniaxial compressive stress optimized performance for both device types. Compared to stress-free conditions, D-mode HEMT showed improvements of 60 % in threshold voltage, 1 % in peak transconductance, and 6 % in breakdown voltage, while E-mode HEMT exhibited increases of 25 %, 4 %, and 9 %, respectively. The study also explored the influence of additional uniaxial stress on the voltage transfer characteristics of complementary GaN HEMT inverters.
{"title":"A numerical investigation on the performance of D/E-mode GaN HEMTs with nitride stress films","authors":"Xing Wang , Yifei Wang , Guanyu Wang , Chunyu Zhou , Bo Ye , Song Shi","doi":"10.1016/j.micrna.2026.208572","DOIUrl":"10.1016/j.micrna.2026.208572","url":null,"abstract":"<div><div>In this work, the impact of additional uniaxial stress on both D-mode and E-mode GaN HEMTs has been investigated. It develops an equivalent conversion model linking additional stress to the Al composition in AlGaN barrier layers, validated through theoretical calculations and TCAD simulations. Using this model, the TCAD tool was employed to analyze the effects of varying stress types and magnitudes on device performance. Simulations revealed that applying a 2 GPa uniaxial compressive stress optimized performance for both device types. Compared to stress-free conditions, D-mode HEMT showed improvements of 60 % in threshold voltage, 1 % in peak transconductance, and 6 % in breakdown voltage, while E-mode HEMT exhibited increases of 25 %, 4 %, and 9 %, respectively. The study also explored the influence of additional uniaxial stress on the voltage transfer characteristics of complementary GaN HEMT inverters.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"212 ","pages":"Article 208572"},"PeriodicalIF":3.0,"publicationDate":"2026-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145981364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-12DOI: 10.1016/j.micrna.2026.208569
Zhen Cui , Hongrun Xu , Xinmei Wang , Leyan Xia , Shuang Zhang , Lu Wang
To address the common issues of existing chiral absorbers, such as complex structures, narrow bandwidths, and the difficulty of tuning circular dichroism (CD), this paper proposes an innovative three-layer tunable chiral absorber based on a composite structure of low-conductivity Vanadium Dioxide(VO2) and highly conductive gold. The designed structure achieves highly selective absorption (CD > 0.8) within a bandwidth of 2.67 THz, while its mirror-symmetric counterpart exhibits an opposite CD response. By thermally tuning the conductivity of VO2, continuous and reversible modulation of CD is realized, with a modulation depth exceeding 0.97 in the range of 5–9 THz. Analyses based on the equivalent circuit model, impedance matching principle, and electric field distribution are conducted to reveal the underlying absorption mechanism. Furthermore, the effects of structural parameters, incident angle, and azimuth angle on the CD spectrum are systematically investigated. This paper presents a new approach for designing tunable broadband chiral absorbers and demonstrates promising potential applications in electromagnetic stealth, terahertz imaging, filtering, and 5G/6G communication systems.
{"title":"A theoretical investigation of a dynamically tunable terahertz Chiral broadband absorber based on VO2","authors":"Zhen Cui , Hongrun Xu , Xinmei Wang , Leyan Xia , Shuang Zhang , Lu Wang","doi":"10.1016/j.micrna.2026.208569","DOIUrl":"10.1016/j.micrna.2026.208569","url":null,"abstract":"<div><div>To address the common issues of existing chiral absorbers, such as complex structures, narrow bandwidths, and the difficulty of tuning circular dichroism (CD), this paper proposes an innovative three-layer tunable chiral absorber based on a composite structure of low-conductivity Vanadium Dioxide(VO<sub>2</sub>) and highly conductive gold. The designed structure achieves highly selective absorption (CD > 0.8) within a bandwidth of 2.67 THz, while its mirror-symmetric counterpart exhibits an opposite CD response. By thermally tuning the conductivity of VO<sub>2</sub>, continuous and reversible modulation of CD is realized, with a modulation depth exceeding 0.97 in the range of 5–9 THz. Analyses based on the equivalent circuit model, impedance matching principle, and electric field distribution are conducted to reveal the underlying absorption mechanism. Furthermore, the effects of structural parameters, incident angle, and azimuth angle on the CD spectrum are systematically investigated. This paper presents a new approach for designing tunable broadband chiral absorbers and demonstrates promising potential applications in electromagnetic stealth, terahertz imaging, filtering, and 5G/6G communication systems.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"212 ","pages":"Article 208569"},"PeriodicalIF":3.0,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145981293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-12DOI: 10.1016/j.micrna.2026.208571
A. Danielraj , Reshma P Vengaloor , A. Lakshmi Narayana , C. Sivamani
The rapid evolution of wide bandgap semiconductor technology has positioned gallium nitride (GaN) metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) and metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) as transformative solutions for next-generation power electronics and radio frequency (RF) applications. This comprehensive review examines twenty years of technological advancement in GaN insulated gate devices, from foundational research breakthroughs in 2005 to cutting-edge commercial implementations in 2025. The fundamental advantages of GaN's wide bandgap (3.39 eV), high critical electric field (3.3 MV/cm), and superior electron mobility (2000 cm2/V·s) enable unprecedented device performance characteristics including breakdown voltages exceeding 3 kV, switching frequencies approaching 10 MHz, and power densities surpassing 7 W/mm. This review systematically analyzes the critical technological pillars enabling these achievements: advanced gate dielectric materials ranging from conventional oxides (Al2O3, HfO2, SiO2) to innovative nitride-based systems (SiNx, AlN) and emerging ferroelectric compounds; sophisticated device architectures including recessed gate structures, field plate configurations, and multi-channel designs that optimize performance trade-offs; and precision fabrication techniques encompassing atomic layer deposition, plasma-enhanced chemical vapor deposition, and plasma-free processing methods. The analysis reveals remarkable progress in enhancement-mode operation with positive threshold voltages exceeding 4 V, ultra-low gate leakage currents below 10−12 A/mm, and frequency responses extending to 320 GHz. Record achievements include maximum current densities of 545 mA/mm, power-added efficiencies above 75 %, and operating temperatures surpassing 450 °C, positioning these devices as enabling technologies for 5G infrastructure, electric vehicle systems, and harsh environment applications. The comprehensive technological foundation established over two decades provides a robust platform for continued innovation, with emerging ultra-wide bandgap substrates and three-dimensional integration approaches promising even greater performance capabilities for future electronic systems.
{"title":"GaN MOSHEMTs and MISHEMTs: A comprehensive review of device physics, materials innovation, and technological pathways in power and RF electronics","authors":"A. Danielraj , Reshma P Vengaloor , A. Lakshmi Narayana , C. Sivamani","doi":"10.1016/j.micrna.2026.208571","DOIUrl":"10.1016/j.micrna.2026.208571","url":null,"abstract":"<div><div>The rapid evolution of wide bandgap semiconductor technology has positioned gallium nitride (GaN) metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) and metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) as transformative solutions for next-generation power electronics and radio frequency (RF) applications. This comprehensive review examines twenty years of technological advancement in GaN insulated gate devices, from foundational research breakthroughs in 2005 to cutting-edge commercial implementations in 2025. The fundamental advantages of GaN's wide bandgap (3.39 eV), high critical electric field (3.3 MV/cm), and superior electron mobility (2000 cm<sup>2</sup>/V·s) enable unprecedented device performance characteristics including breakdown voltages exceeding 3 kV, switching frequencies approaching 10 MHz, and power densities surpassing 7 W/mm. This review systematically analyzes the critical technological pillars enabling these achievements: advanced gate dielectric materials ranging from conventional oxides (Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, SiO<sub>2</sub>) to innovative nitride-based systems (SiN<sub>x</sub>, AlN) and emerging ferroelectric compounds; sophisticated device architectures including recessed gate structures, field plate configurations, and multi-channel designs that optimize performance trade-offs; and precision fabrication techniques encompassing atomic layer deposition, plasma-enhanced chemical vapor deposition, and plasma-free processing methods. The analysis reveals remarkable progress in enhancement-mode operation with positive threshold voltages exceeding 4 V, ultra-low gate leakage currents below 10<sup>−12</sup> A/mm, and frequency responses extending to 320 GHz. Record achievements include maximum current densities of 545 mA/mm, power-added efficiencies above 75 %, and operating temperatures surpassing 450 °C, positioning these devices as enabling technologies for 5G infrastructure, electric vehicle systems, and harsh environment applications. The comprehensive technological foundation established over two decades provides a robust platform for continued innovation, with emerging ultra-wide bandgap substrates and three-dimensional integration approaches promising even greater performance capabilities for future electronic systems.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"212 ","pages":"Article 208571"},"PeriodicalIF":3.0,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145981296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-12DOI: 10.1016/j.micrna.2026.208570
Ayşe Nur Şahin , Ahmet Altındal , Zeynep Güven Özdemir
This study investigates the room-temperature gas-sensing performance of next-generation sensors fabricated by electrochemically transforming 2D SnS2 films into SO42−/SnO2 structures. The sensors were prepared on an interdigital transducer via the spin-coating method, followed by low-potential electrochemical oxidation in a sulfuric acid–methanol medium to form a 3D SO42−/SnO2 structure. Unlike conventional high-temperature oxidation or chemical etching methods that cause bulk degradation, this study employs a low-potential electrochemical oxidation–sulfation strategy to controllably convert the SnS2 surface into SO42−/SnO2 while preserving the nanostructure. While the Sn core structure remained intact, FTIR, EDX, and XPS analyses confirmed the successful surface sulfation and the formation of sulfate-related chemical states on the SnO2 surface. XRD analysis verified crystalline-level structural transformation, and SEM imaging revealed distinct surface morphology changes. The gas-sensing performance was systematically evaluated against VOC's vapors over a concentration range of 50–350 ppm, enabling a comprehensive assessment of sensitivity and selectivity. Results showed that the SnS2-based sensor exhibited high sensitivity to acetone, whereas the SO42−/SnO2 structure demonstrated nearly tenfold enhanced responsiveness to NH3 vapor. Sulfate functionalization introduced Lewis acidic surface sites, strengthening interactions with NH3 and enabling nA-level responses. Although increased humidity (30–90 % RH) reduced response amplitude, reliable NH3 sensing was maintained, with interference tests at 50 % RH confirming robust performance. Furthermore, stable and repeatable signals over 10 days demonstrated excellent durability. These results highlight electrochemical surface engineering as an effective strategy to develop metal oxide– and chalcogenide-based NH3 sensors with improved selectivity, humidity tolerance, and long-term stability.
{"title":"Synthesis of SnS2 modified to sulfated tin oxide by electrochemical method and VOC sensing properties","authors":"Ayşe Nur Şahin , Ahmet Altındal , Zeynep Güven Özdemir","doi":"10.1016/j.micrna.2026.208570","DOIUrl":"10.1016/j.micrna.2026.208570","url":null,"abstract":"<div><div>This study investigates the room-temperature gas-sensing performance of next-generation sensors fabricated by electrochemically transforming 2D SnS<sub>2</sub> films into SO<sub>4</sub><sup>2−</sup>/SnO<sub>2</sub> structures. The sensors were prepared on an interdigital transducer via the spin-coating method, followed by low-potential electrochemical oxidation in a sulfuric acid–methanol medium to form a 3D SO<sub>4</sub><sup>2−</sup>/SnO<sub>2</sub> structure. Unlike conventional high-temperature oxidation or chemical etching methods that cause bulk degradation, this study employs a low-potential electrochemical oxidation–sulfation strategy to controllably convert the SnS<sub>2</sub> surface into SO<sub>4</sub><sup>2−</sup>/SnO<sub>2</sub> while preserving the nanostructure. While the Sn core structure remained intact, FTIR, EDX, and XPS analyses confirmed the successful surface sulfation and the formation of sulfate-related chemical states on the SnO<sub>2</sub> surface. XRD analysis verified crystalline-level structural transformation, and SEM imaging revealed distinct surface morphology changes. The gas-sensing performance was systematically evaluated against VOC's vapors over a concentration range of 50–350 ppm, enabling a comprehensive assessment of sensitivity and selectivity. Results showed that the SnS<sub>2</sub>-based sensor exhibited high sensitivity to acetone, whereas the SO<sub>4</sub><sup>2−</sup>/SnO<sub>2</sub> structure demonstrated nearly tenfold enhanced responsiveness to NH<sub>3</sub> vapor. Sulfate functionalization introduced Lewis acidic surface sites, strengthening interactions with NH<sub>3</sub> and enabling nA-level responses. Although increased humidity (30–90 % RH) reduced response amplitude, reliable NH<sub>3</sub> sensing was maintained, with interference tests at 50 % RH confirming robust performance. Furthermore, stable and repeatable signals over 10 days demonstrated excellent durability. These results highlight electrochemical surface engineering as an effective strategy to develop metal oxide– and chalcogenide-based NH<sub>3</sub> sensors with improved selectivity, humidity tolerance, and long-term stability.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"212 ","pages":"Article 208570"},"PeriodicalIF":3.0,"publicationDate":"2026-01-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145981295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-08DOI: 10.1016/j.micrna.2025.208535
Sohail Mumtaz , Sameerah I. Al-Saeedi , Arfan Razzaq , Muhammad Imran , Muhammad Azhar Mumtaz , Amir Muhammad Afzal , M.A. Diab , Heba A. El-Sabban
{"title":"Corrigendum to “Designing CoTb2O4 electrodes integrated with MoTe2 and graphene for high-performance supercapacitors and HER catalysis” [Micro Nanostruct., 209 (2026) 208457]","authors":"Sohail Mumtaz , Sameerah I. Al-Saeedi , Arfan Razzaq , Muhammad Imran , Muhammad Azhar Mumtaz , Amir Muhammad Afzal , M.A. Diab , Heba A. El-Sabban","doi":"10.1016/j.micrna.2025.208535","DOIUrl":"10.1016/j.micrna.2025.208535","url":null,"abstract":"","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208535"},"PeriodicalIF":3.0,"publicationDate":"2026-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145939144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-07DOI: 10.1016/j.micrna.2026.208567
T.F. Cantalice, S.M. Urahata, A.A. Quivy
InAs/GaAs submonolayer quantum dots rely on the vertical alignment of two-dimensional InAs islands separated by thin GaAs layers. These stacks arise from the local strain field generated by the lattice mismatch between the constituent materials. However, experimental observations show that such quantum dots appear irregular and shorter than expected. Indium segregation is particularly strong in the InAs/GaAs system and is suspected to weaken the internal strain field. To confirm this assumption, we simulated the strain in the GaAs matrix surrounding InAs inclusions with the shape of either a full sphere or a thin truncated hemisphere. The results demonstrate that, when the original two-dimensional InAs islands are realistically represented by a thin truncated hemisphere subjected to strong In segregation, the internal strain is indeed much lower than that required to form full stacks, even for distances as short as a few monolayers between inclusions.
{"title":"Weakening of the internal strain field in InAs/GaAs submonolayer quantum dots due to indium segregation","authors":"T.F. Cantalice, S.M. Urahata, A.A. Quivy","doi":"10.1016/j.micrna.2026.208567","DOIUrl":"10.1016/j.micrna.2026.208567","url":null,"abstract":"<div><div>InAs/GaAs submonolayer quantum dots rely on the vertical alignment of two-dimensional InAs islands separated by thin GaAs layers. These stacks arise from the local strain field generated by the lattice mismatch between the constituent materials. However, experimental observations show that such quantum dots appear irregular and shorter than expected. Indium segregation is particularly strong in the InAs/GaAs system and is suspected to weaken the internal strain field. To confirm this assumption, we simulated the strain in the GaAs matrix surrounding InAs inclusions with the shape of either a full sphere or a thin truncated hemisphere. The results demonstrate that, when the original two-dimensional InAs islands are realistically represented by a thin truncated hemisphere subjected to strong In segregation, the internal strain is indeed much lower than that required to form full stacks, even for distances as short as a few monolayers between inclusions.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"212 ","pages":"Article 208567"},"PeriodicalIF":3.0,"publicationDate":"2026-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1016/j.micrna.2026.208566
Osamah Alsalman
This research presents a graphene-based highly sensitive and machine learning-optimized plasmonic biosensor specifically designed for the early detection of adrenal cancer. The proposed sensor architecture achieves an outstanding sensitivity of 1429 nm/RIU, outperforming many state-of-the-art biosensors. It leverages strong plasmonic resonance shifts resulting from refractive index changes caused by biomolecular interactions related to adrenal cancer markers. To further enhance performance, parametric optimization of structural dimensions—such as resonator height and material layer thicknesses—was conducted, supported by a machine learning (ML) regression model. The model achieved a high prediction accuracy with an R2 value of 0.99, indicating near-perfect agreement between simulated and predicted outcomes. Key sensing performance indicators including FOM, Q-Factor and DL were thoroughly analyzed, confirming the sensor’s superiority in precision and detection capability. The ML-assisted design not only accelerated the optimization process but also improved the robustness and adaptability of the biosensor across different operating conditions. The sensor’s excellent spectral response, combined with real-time and label-free detection capabilities, makes it a strong candidate for clinical diagnostics. The sensor has high absorptance and stable spectral response in near-normal and moderate incidence angles, the realistic working parameters of biosensing. Nevertheless, the absorptance is lower at very oblique angles (θ > 70–80°), and performance falls below 0.5 at 80° approximately. This is a constraint of plasmonic resonance coupling and has no impact on the applicability of the sensor in real detection situations where near-normal incidence is generally used. This work demonstrates the promising application of AI-driven sensor design in developing next-generation biosensors for ultra-sensitive and specific detection of adrenal cancer biomarkers.
{"title":"Intelligent plasmonic sensing platform for adrenal cancer: Graphene-based machine learning optimization and high-performance detection","authors":"Osamah Alsalman","doi":"10.1016/j.micrna.2026.208566","DOIUrl":"10.1016/j.micrna.2026.208566","url":null,"abstract":"<div><div>This research presents a graphene-based highly sensitive and machine learning-optimized plasmonic biosensor specifically designed for the early detection of adrenal cancer. The proposed sensor architecture achieves an outstanding sensitivity of 1429 nm/RIU, outperforming many state-of-the-art biosensors. It leverages strong plasmonic resonance shifts resulting from refractive index changes caused by biomolecular interactions related to adrenal cancer markers. To further enhance performance, parametric optimization of structural dimensions—such as resonator height and material layer thicknesses—was conducted, supported by a machine learning (ML) regression model. The model achieved a high prediction accuracy with an R<sup>2</sup> value of 0.99, indicating near-perfect agreement between simulated and predicted outcomes. Key sensing performance indicators including FOM, Q-Factor and DL were thoroughly analyzed, confirming the sensor’s superiority in precision and detection capability. The ML-assisted design not only accelerated the optimization process but also improved the robustness and adaptability of the biosensor across different operating conditions. The sensor’s excellent spectral response, combined with real-time and label-free detection capabilities, makes it a strong candidate for clinical diagnostics. The sensor has high absorptance and stable spectral response in near-normal and moderate incidence angles, the realistic working parameters of biosensing. Nevertheless, the absorptance is lower at very oblique angles (θ > 70–80°), and performance falls below 0.5 at 80° approximately. This is a constraint of plasmonic resonance coupling and has no impact on the applicability of the sensor in real detection situations where near-normal incidence is generally used. This work demonstrates the promising application of AI-driven sensor design in developing next-generation biosensors for ultra-sensitive and specific detection of adrenal cancer biomarkers.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"212 ","pages":"Article 208566"},"PeriodicalIF":3.0,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work presents a Recessed-Gate high-k junctionless nanowire ferroelectric FET (Re-G-HCJNFe FET, HfO2 gate stack) and benchmark it against a conventional HCJNFe across 200–500 K, showing consistent improvements in analog parameters, and noise parameters. At 300 K, Re-G-HCJNFe lowers the subthreshold slope by ~ 6.4 % and DIBL by ~ 8.9 %, suppresses IOFF by ∼5 orders of magnitude, and boosts ION/IOFF from ∼4.2 × 104 to ∼1.3 × 108; analog performance strengthens as the transconductance generation function (TGF) rises alongside favourable early voltage (VEA) and intrinsic gain (Av) trends. These benefits persist at elevated temperature e.g., at 500 K the subthreshold swing relief remains substantial and the minimum noise figure at 1 THz is reduced by ∼16 % at 300 K, and ∼39 % at 200 K, consistent with negligible gate-leakage current and superior short-channel control. Collectively, the Re-G architecture with high-k/ferroelectric gating makes Re-G-HCJNFe FET to a temperature-robust, low-noise, low-standby-power device suitable for high-temperature mixed-signal blocks (e.g., current mirrors, buffers), low-noise RF, and energy-efficient digital logic. Compact-model development capturing electrostatic parameter with ferroelectric effects, and system-level benchmarking against scaled GAA references in complete analog/RF and low-power digital paths.
{"title":"A wide temperature benchmark of the Re-G-HCJNFe FET for noise reduction in low-power analog integration","authors":"Alok Kumar , Abhay Pratap Singh , Abhinav Gupta , Tarun Kumar Gupta","doi":"10.1016/j.micrna.2026.208565","DOIUrl":"10.1016/j.micrna.2026.208565","url":null,"abstract":"<div><div>This work presents a Recessed-Gate high-k junctionless nanowire ferroelectric FET (Re-G-HCJNFe FET, HfO<sub>2</sub> gate stack) and benchmark it against a conventional HCJNFe across 200–500 K, showing consistent improvements in analog parameters, and noise parameters. At 300 K, Re-G-HCJNFe lowers the subthreshold slope by ~ 6.4 % and DIBL by ~ 8.9 %, suppresses I<sub>OFF</sub> by ∼5 orders of magnitude, and boosts I<sub>ON</sub>/I<sub>OFF</sub> from ∼4.2 × 10<sup>4</sup> to ∼1.3 × 10<sup>8</sup>; analog performance strengthens as the transconductance generation function (TGF) rises alongside favourable early voltage (V<sub>EA</sub>) and intrinsic gain (A<sub>v</sub>) trends. These benefits persist at elevated temperature e.g., at 500 K the subthreshold swing relief remains substantial and the minimum noise figure at 1 THz is reduced by ∼16 % at 300 K, and ∼39 % at 200 K, consistent with negligible gate-leakage current and superior short-channel control. Collectively, the Re-G architecture with high-k/ferroelectric gating makes Re-G-HCJNFe FET to a temperature-robust, low-noise, low-standby-power device suitable for high-temperature mixed-signal blocks (e.g., current mirrors, buffers), low-noise RF, and energy-efficient digital logic. Compact-model development capturing electrostatic parameter with ferroelectric effects, and system-level benchmarking against scaled GAA references in complete analog/RF and low-power digital paths.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208565"},"PeriodicalIF":3.0,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145939146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1016/j.micrna.2026.208562
Shufang Li, Yunfeng Chen, Junqi Tang
Stable and efficient red-emitting phosphors hold significant application value for next-generation phosphor-converted white light-emitting diodes (pc-WLEDs). This study successfully synthesized europium-doped strontium orthoborate (Sr3B2O6: Eu3+) red phosphors via a high-temperature solid-state reaction method. The phosphor samples were pure phase and had an average particle size of 1.99 ± 0.88 μm. Near the optimal doping concentration (x = 0.040), the integrated intensity contribution of the 5D0→7F4 (704 nm) electric-dipole transition was significantly enhanced. The Sr3B2O6 host matrix can effectively increase the electric-dipole transition of Eu3+, resulting in chromaticity coordinates (0.629, 0.348) close to those of standard red light and high color purity. The quantum efficiency of Sr2.96B2O6:0.04Eu3+ is 33.76 %, with a fluorescence lifetime of 1.349 ms. Furthermore, its luminescence intensity at 498 K remained at 68.90 % of the room temperature intensity. The encapsulated pc-WLED device exhibits white emission with chromaticity coordinates of (0.334, 0.344), and located in the white region. The pc-WLED device also has a high color purity with a high color rendering index (CRI or Ra = 90) and correlated color temperature (CCT) of 5437 K. These results demonstrate the excellent application potential of this phosphor in the field of white LED lighting.
{"title":"Study on the enhanced electric dipole transition ratio of europium (Eu3+) in strontium orthoborate red phosphor and its WLED applications","authors":"Shufang Li, Yunfeng Chen, Junqi Tang","doi":"10.1016/j.micrna.2026.208562","DOIUrl":"10.1016/j.micrna.2026.208562","url":null,"abstract":"<div><div>Stable and efficient red-emitting phosphors hold significant application value for next-generation phosphor-converted white light-emitting diodes (pc-WLEDs). This study successfully synthesized europium-doped strontium orthoborate (Sr<sub>3</sub>B<sub>2</sub>O<sub>6</sub>: Eu<sup>3+</sup>) red phosphors via a high-temperature solid-state reaction method. The phosphor samples were pure phase and had an average particle size of 1.99 ± 0.88 μm. Near the optimal doping concentration (x = 0.040), the integrated intensity contribution of the <sup><em>5</em></sup><em>D</em><sub><em>0</em></sub> <em>→</em><sup><em>7</em></sup><em>F</em><sub><em>4</em></sub> (704 nm) electric-dipole transition was significantly enhanced. The Sr<sub>3</sub>B<sub>2</sub>O<sub>6</sub> host matrix can effectively increase the electric-dipole transition of Eu<sup>3+</sup>, resulting in chromaticity coordinates (0.629, 0.348) close to those of standard red light and high color purity. The quantum efficiency of Sr<sub>2.96</sub>B<sub>2</sub>O<sub>6</sub>:0.04Eu<sup>3+</sup> is 33.76 %, with a fluorescence lifetime of 1.349 ms. Furthermore, its luminescence intensity at 498 K remained at 68.90 % of the room temperature intensity. The encapsulated pc-WLED device exhibits white emission with chromaticity coordinates of (0.334, 0.344), and located in the white region. The pc-WLED device also has a high color purity with a high color rendering index (CRI or Ra = 90) and correlated color temperature (CCT) of 5437 K. These results demonstrate the excellent application potential of this phosphor in the field of white LED lighting.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208562"},"PeriodicalIF":3.0,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145939147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Present study proposes a biosensor built around heterojunction electrically doped junctionless TFET to obtain label-free biomolecule surveillance to lower fabrication sophistication and expense of nanotechnology biosensors. Dielectric constants of different immobilized biomolecules in interior of nano cavity are changed to determine shift in ambipolar current, perceived as sensing variable. In suggested device, polarity gate-1 (PG-1) bias of 1.2 V and PG-2 bias of −1.2 V, is applied across heterojunction to stimulate n+ and p+, drain and source, correspondingly. Portion of dielectric oxide layer is etched towards drain channel tunnelling intersection to create nanogap cavity underneath PG-1 terminal, used to trap biomolecule test specimens. Presence of neutral and charged molecules inside cavities have been examined through modifications to electrical properties of suggested biosensor, including electric field, drain current, etc. Subthreshold swing, drain current, threshold voltage, switching ratio, and transconductance-to-current ratio are used to assess suggested biosensor's sensing capability. Suggested HJ-CD-ED-JLTFET biosensor, employing a neutral biomolecule having a dielectric constant of 12, reaches absolute maximum sensitivity of 3.86 × 109 assuming a fully packed nanocavity. To comprehend potential difficulties, implications of non-ideal problems on sensitivity, such as various fill factors (FFs), locations of biomolecules and steric hindrances, are investigated for suggested biosensor.
{"title":"Design and performance investigation of heterojunction electrically doped junctionless TFET for label-free biomolecule detection considering ambipolar conduction","authors":"Priyanka Kwatra , Sajai Vir Singh , Kaushal Nigam , Mukesh Kumar Bind","doi":"10.1016/j.micrna.2026.208564","DOIUrl":"10.1016/j.micrna.2026.208564","url":null,"abstract":"<div><div>Present study proposes a biosensor built around heterojunction electrically doped junctionless TFET to obtain label-free biomolecule surveillance to lower fabrication sophistication and expense of nanotechnology biosensors. Dielectric constants of different immobilized biomolecules in interior of nano cavity are changed to determine shift in ambipolar current, perceived as sensing variable. In suggested device, polarity gate-1 (PG-1) bias of 1.2 V and PG-2 bias of −1.2 V, is applied across heterojunction to stimulate n<sup>+</sup> and p<sup>+</sup>, drain and source, correspondingly. Portion of dielectric oxide layer is etched towards drain channel tunnelling intersection to create nanogap cavity underneath PG-1 terminal, used to trap biomolecule test specimens. Presence of neutral and charged molecules inside cavities have been examined through modifications to electrical properties of suggested biosensor, including electric field, drain current, etc. Subthreshold swing, drain current, threshold voltage, switching ratio, and transconductance-to-current ratio are used to assess suggested biosensor's sensing capability. Suggested HJ-CD-ED-JLTFET biosensor, employing a neutral biomolecule having a dielectric constant of 12, reaches absolute maximum sensitivity of 3.86 × 10<sup>9</sup> assuming a fully packed nanocavity. To comprehend potential difficulties, implications of non-ideal problems on sensitivity, such as various fill factors (FFs), locations of biomolecules and steric hindrances, are investigated for suggested biosensor.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208564"},"PeriodicalIF":3.0,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145939145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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