Micro and Nanostructures最新文献

A rigorous comparative review of advanced TFET architectures: From device innovations to sensor applications 先进TFET架构的严格比较审查：从器件创新到传感器应用

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-05-01 Epub Date: 2026-02-06 DOI: 10.1016/j.micrna.2026.208582

Mohammad K. Anvarifard , Zeinab Ramezani

This paper presents a comprehensive and rigorous review of the most significant Tunnel Field-Effect Transistor (TFET) architectures extensively studied in recent research. We systematically and hierarchically analyze TFETs based on diverse engineering approaches, including doping modulation, material innovation, ferroelectric-induced negative capacitance, heterodielectric gate formation, overlap/underlap techniques, junctionless designs, and vertical configurations. From viewpoint of compatibility by CMOS process, the scope is intentionally biased toward bulk/SiGe-based and vertical TFETs by also investigating the TFETs employing two-dimensional (2D) materials, which are critical for ultrascale applications owing to their superior control over short-channel effects. Furthermore, the potential of novel TFETs as highly sensitive biosensors and gas sensors is thoroughly examined, with a detailed comparison of their electrical performance and sensing capabilities. The study highlights the inherent advantages and limitations of each of the TFET categories, providing an outstanding understanding of their operational trade-offs. Through an extensive comparative analysis, we identify the optimal TFET device in terms of electrical performance in each TFET category, offering valuable guidance for VLSI designers in selecting TFETs tailored to specific application requirements. Additionally, the best TFET device among all these categories has been selected to provide a practical path for circuit and process engineers to design based on high-performance architectures. This work not only consolidates current knowledge but also paves the way for future innovations in TFET-based sensor technologies and nanoscale electronic devices, underscoring the fundamental role of device architecture and material choice in advancing next-generation integrated circuits.

本文对近年来广泛研究的最重要的隧道场效应晶体管（TFET）结构进行了全面而严格的回顾。我们系统地、分层地分析了基于不同工程方法的tfet，包括掺杂调制、材料创新、铁电致负电容、异质介质栅形成、重叠/underlap技术、无结设计和垂直配置。从CMOS工艺兼容性的角度来看，通过研究采用二维（2D）材料的tfet，范围有意偏向于体/硅基和垂直tfet，由于其对短通道效应的卓越控制，这对于超大规模应用至关重要。此外，对新型tfet作为高灵敏度生物传感器和气体传感器的潜力进行了彻底的研究，并详细比较了它们的电性能和传感能力。该研究强调了每种ttfet类别的固有优势和局限性，提供了对其操作权衡的杰出理解。通过广泛的比较分析，我们确定了每个TFET类别中电性能最佳的TFET器件，为VLSI设计人员选择适合特定应用要求的TFET提供了有价值的指导。此外，在所有这些类别中选择最好的TFET器件，为电路和工艺工程师提供基于高性能架构进行设计的实用途径。这项工作不仅巩固了现有的知识，而且为未来基于tfet的传感器技术和纳米级电子器件的创新铺平了道路，强调了器件架构和材料选择在推进下一代集成电路中的基本作用。

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引用次数: 0

Indium oxide (In2O3) gas sensors - An insight study 氧化铟（In2O3）气体传感器-一项深入研究

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-05-01 Epub Date: 2026-02-03 DOI: 10.1016/j.micrna.2026.208586

Sathish Sugumaran

The paper presents a comprehensive investigation of indium Oxide (In₂O₃) gas sensors, emphasizing the material properties and the optimization of key parameters governing gas-sensing characteristics to achieve enhanced sensing performance. This paper infers the significance of preparation methods and optimized conditions of pure In₂O₃ and its nanocomposites/heterostructures, demonstrating their superior characteristics for sensing a wide range of toxic and non-toxic gases. The paper highlights the advantages, drawbacks, and challenges involved in In₂O₃ gas sensor fabrication, and discusses future prospects along with potential strategies in detail.

本文对氧化铟（In2O3）气体传感器进行了全面的研究，强调了材料性能和控制气敏特性的关键参数的优化，以实现增强的传感性能。本文推断了纯In2O3及其纳米复合材料/异质结构的制备方法和优化条件的意义，展示了其在广泛的有毒和无毒气体传感方面的优越特性。本文重点介绍了In2O3气体传感器制造的优点、缺点和挑战，并详细讨论了未来的前景和潜在的策略。

引用次数: 0

Gas sensors optimization design by Pd- and Pt-doped Janus-HfSSe monolayer for industrial emission: A DFT study 工业排放用掺杂Pd和pt的Janus-HfSSe单层气体传感器优化设计：DFT研究

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-05-01 Epub Date: 2026-02-03 DOI: 10.1016/j.micrna.2026.208592

Wei Xie , Nan Liu , Hao Chen , Tianyan Jiang

Developing high-performance sensors for hazardous hydrogen fluoride (HF) gas is critical for industrial safety. In this study, we systematically investigate the gas-sensing properties of Pd- and Pt-doped Janus HfSSe monolayers towards HF and interfering gases (SO2, NO, NO2) using density functional theory (DFT). Our calculations reveal that transition metal doping significantly enhances the sensing performance of the inert intrinsic HfSSe by introducing d-orbital active sites near the Fermi level and effectively modulating the electronic structure. Notably, Pt@HfSSe exhibits the most superior sensing performance with a high sensitivity of 5.13% towards HF, driven by substantial work function changes. Although Pt@HfSSe shows strong chemisorption for both HF and NO, competitive adsorption simulations uncover a decisive site-blocking effect: pre-adsorbed HF generates a strong repulsive potential (+4.815 eV) against NO. This confirms Pt@HfSSe as a highly selective, dedicated HF sensor rather than a dual-gas sensor. While the strong adsorption (Eads = −0.561 eV) leads to a relatively long recovery time (381 s) at room temperature, this can be mitigated by moderate heating. These findings provide theoretical guidance for designing specific, high-sensitivity HF gas sensors based on functionalized Janus HfSSe.

开发高性能的有害氟化氢气体传感器对工业安全至关重要。本研究利用密度泛函理论（DFT）系统研究了掺杂Pd和pt的Janus HfSSe单层膜对HF和干扰气体（SO2， NO, NO2）的气敏特性。我们的计算表明，过渡金属掺杂通过在费米能级附近引入d轨道活性位点和有效地调制电子结构，显著提高了惰性本征HfSSe的传感性能。值得注意的是，Pt@HfSSe在功函数变化的驱动下，对HF的灵敏度高达5.13%，表现出最优越的传感性能。虽然Pt@HfSSe对HF和NO都有很强的化学吸附作用，但竞争性吸附模拟揭示了决定性的位点阻断效应：预吸附的HF对NO产生很强的排斥电位（+4.815 eV）。这证实Pt@HfSSe是一种高度选择性的专用高频传感器，而不是双气体传感器。虽然强吸附（Eads = - 0.561 eV）导致室温下相对较长的恢复时间（381 s），但可以通过适度加热来缓解。这些研究结果为设计基于功能化Janus HfSSe的高灵敏度高频气体传感器提供了理论指导。

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引用次数: 0

Tunable electronic properties and Schottky barrier in NbS2/SiS2 heterostructures via strain and electric field 应变和电场作用下NbS2/SiS2异质结构的可调谐电子特性和肖特基势垒

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-05-01 Epub Date: 2026-02-07 DOI: 10.1016/j.micrna.2026.208603

You Xie , Jiahao Wang , Zhengyong Chen , Yan Chen , Zixuan Zhou , Wentaiyang Zhang , Tao Zhang

Interface engineering of two-dimensional (2D) van der Waals heterostructures (vdWHs) is critical for the development of next-generation nanoelectronic devices. In this work, we systematically investigate the structural stability, electronic properties, and interfacial contact behavior of heterostructures composed of metallic NbS₂ and semiconducting SiS₂ monolayers using first-principles calculations. A low n-type Schottky barrier (0.08–0.14 eV), independent of stacking order, is formed. While the equilibrium tunneling probability (TP) is relatively low (4.94–6.63%), vertical strain enhances the TP by an order of magnitude by simultaneously reducing both the barrier height and width, approaching Ohmic contact under strong compression. Moreover, an external electric field enables reversible switching between n-type and p-type conduction within a range of ±0.8 V/Å. The intensity of metal-induced gap states (MIGS) increases monotonically with enhanced interlayer coupling, leading to stronger Fermi-level pinning (FLP), which ultimately determines the upper limit of tunability. These quantitative results provide a clear material–strain–field co-design pathway for achieving reconfigurable, low-contact-resistance two-dimensional nanoelectronic and optoelectronic devices.

二维范德华异质结构（vdWHs）的界面工程对于下一代纳米电子器件的开发至关重要。在这项工作中，我们使用第一性原理计算系统地研究了由金属NbS2和半导体SiS2单层组成的异质结构的结构稳定性、电子性能和界面接触行为。形成了与堆叠顺序无关的低n型肖特基势垒（0.08 ~ 0.14 eV）。虽然平衡隧穿概率（TP）相对较低（4.94 ~ 6.63%），但垂直应变通过同时减小势垒高度和宽度，使TP提高了一个数量级，在强压缩下接近欧姆接触。此外，外电场可以在±0.8 V/Å范围内实现n型和p型导通之间的可逆切换。随着层间耦合的增强，金属诱导隙态（MIGS）的强度单调增加，导致更强的费米能级钉钉（FLP），最终决定了可调性的上限。这些定量结果为实现可重构、低接触电阻的二维纳米电子和光电子器件提供了明确的材料-应变场协同设计途径。

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引用次数: 0

Effects of active element Ti on interfacial microstructure of Silica Glass/ Silica Glass joints soldered using Bi42Sn2Ag2Ti(Ce,Ga) alloy filler 活性元素Ti对Bi42Sn2Ag2Ti（Ce,Ga）合金钎料焊接二氧化硅玻璃/二氧化硅玻璃接头界面微观结构的影响

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-05-01 Epub Date: 2026-02-09 DOI: 10.1016/j.micrna.2026.208605

L.X. Cheng , D.Y. Chen

In order to explore the effects of titanium on the microstructure of Silica Glass/Silica Glass joints soldered using Bi42Sn2Ag2Ti(Ce,Ga) alloy filler in low temperature, the distribution of elements and the formation of new substances at the interface were observed and analyzed. At the bonding temperature of 170 °C, titanium segregates at the bonding interface with a holding time of 30min; extending the holding time to 60min makes this titanium aggregation more pronounced. At 290 °C, however, the pattern differs: titanium segregation is observable at 30min, but barely visible when the holding time is extended to 60min. These results suggest that bonding temperature is a critical factor regulating the diffusion rate of titanium in molten solder during soldering process. Additionally, transmission electron microscopy(TEM) observations of the cross-sectional of silica glass/Bi42Sn2Ag2Ti(Ce,Ga) joint soldered at 290 °C for 30min revealed the discontinuous formation of TiO, TiO₂ and Sn₃Ti₂ at the interface. Further analysis shows that the stoichiometry of Ti oxide formed at the interface may be determined by the concentration of Ti in the alloy. Finally, the evolutionary behavior of the active element Ti during the bonding process of silica glass and Bi42Sn2Ag2Ti(Ce,Ga) active solder at 290 °C was explored. The entire bonding process is proposed to involve three sequential stages: initial migration of Ti atoms, subsequent segregation and reaction of Ti at the interface, and continuous diffusion and further reaction of Ti to promote interfacial bonding.

为了探讨钛对Bi42Sn2Ag2Ti（Ce,Ga）合金钎料低温焊接二氧化硅玻璃/二氧化硅玻璃接头微观结构的影响，观察分析了界面处元素的分布和新物质的形成。在键合温度为170℃时，钛在键合界面处偏析，保温时间为30min；将保温时间延长至60min，这种钛聚集现象更加明显。然而，在290°C时，模式不同：在30min时可以观察到钛的偏析，但当保温时间延长到60min时几乎看不到。结果表明，在焊接过程中，焊接温度是调节钛在钎料中扩散速率的关键因素。此外，通过透射电镜（TEM）观察在290℃下焊接30min的二氧化硅玻璃/Bi42Sn2Ag2Ti（Ce,Ga）接头的横截面，发现在界面处有TiO、TiO2和Sn3Ti2的不连续形成。进一步分析表明，在界面处形成的氧化钛的化学计量可能由合金中钛的浓度决定。最后，研究了活性元素Ti在290℃下与Bi42Sn2Ag2Ti（Ce,Ga）活性焊料结合过程中的演化行为。整个成键过程包括三个连续的阶段：Ti原子的初始迁移，随后Ti在界面处的偏析和反应，以及Ti的持续扩散和进一步反应促进界面成键。

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引用次数: 0

Effect of sintering temperature on the structural and dielectric properties of hydrothermally synthesized 0.5BCT-0.5BZT ceramics 烧结温度对水热合成0.5BCT-0.5BZT陶瓷结构和介电性能的影响

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-05-01 Epub Date: 2026-02-07 DOI: 10.1016/j.micrna.2026.208591

Gun Anit Kaur , Neha Kumari , Sahil Kumar , Mamta Shandilya

Lead-free complex perovskite 0.5BCT-0.5BZT ceramics were synthesized via eco-friendly hydrothermal method and sintered at different temperatures ranging from 900 to 1300 °C. The effect of sintering temperature on the variations in grain size is discussed in detail. X-ray diffraction confirmed the formation of a single-phase perovskite structure without secondary phases, with peak shifts indicating lattice distortion due to Ca²⁺ and Zr⁴⁺ incorporation. SEM analysis revealed that the progressive increase in grain size (0.12–0.39 μm) and densification with higher sintering temperatures, accompanied by a reduction in porosity. Temperature dependent dielectric properties are measured in the frequency range between 100 Hz and 100 kHz. BCT-BZT exhibits highly dense microstructure as the sintering temperature was increased to 1300 °C. The relative permittivity increased with sintering temperature, reaching a maximum for the 1300 °C sample, driven by combined grain growth and enhanced densification. The material exhibited diffuse phase transition behavior and low dielectric loss at high temperatures, favorable for capacitor applications. Ferroelectric (P–E) measurements indicated increased saturation and remanent polarization with reduced coercive field at higher sintering temperatures, consistent with improved domain wall mobility. These results demonstrate that sintering optimization significantly enhances the dielectric and ferroelectric performance of hydrothermally synthesized BCT–BZT ceramics, making them promising candidates for high-performance lead-free capacitors and energy storage devices.

采用水热法合成了无铅钙钛矿0.5BCT-0.5BZT复合陶瓷，并在900 ~ 1300℃不同温度下烧结。详细讨论了烧结温度对晶粒尺寸变化的影响。x射线衍射证实形成了无二次相的单相钙钛矿结构，峰移表明由于Ca2+和Zr4+的掺入导致晶格畸变。SEM分析表明，随着烧结温度的升高，晶粒尺寸逐渐增大（0.12 ~ 0.39 μm），致密化，孔隙率降低。在100hz和100khz之间的频率范围内测量与温度相关的介电特性。当烧结温度提高到1300℃时，BCT-BZT的显微组织致密。相对介电常数随烧结温度的升高而增大，在1300℃时达到最大值，这是由晶粒生长和致密化增强共同作用的结果。该材料在高温下表现出扩散相变行为和低介电损耗，有利于电容器的应用。铁电（P-E）测量表明，在较高的烧结温度下，随着矫顽力场的降低，饱和和剩余极化增加，与畴壁迁移率的提高相一致。这些结果表明，烧结优化显著提高了水热合成BCT-BZT陶瓷的介电和铁电性能，使其成为高性能无铅电容器和储能器件的有希望的候选材料。

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引用次数: 0

First-principles study of SF6 decomposition product adsorption on Ti-decorated WS2 monolayers for gas sensing applications SF6分解产物在ti修饰WS2单层气敏吸附的第一性原理研究

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-05-01 Epub Date: 2026-01-30 DOI: 10.1016/j.micrna.2026.208584

Hamza Ahmad , Yuhuai Liu , Fang Wang , Zuhaib Nishter , Munees Khan , Rana Muhammad Zulqarnain , Xolmurotov Fozil , Xolmuratov Xolilla Sariyevich

The current work utilized a DFT study to examine the structural, electronic, and gas-sensing properties of a titanium-decorated WS₂ (Ti-WS₂) monolayer. The calculated binding energy of −2.40 eV is consistent with the thermodynamic stability of Ti incorporation, which shows the feasibility of Ti substitution at W sites in the WS₂ lattice. Adsorption parameters for significant decomposition products of SF₆, including SO₂, SO₂F₂, H₂S, HF, and SOF₂, were thoroughly investigated. The Ti-WS₂ monolayer exhibits strong chemisorption interactions with these species, with adsorption energies of −1.71, −1.66, −1.54, −1.45, and −1.34 eV, respectively, signifying high affinity and selective adsorption ability. Electronic structure analysis highlighted that Ti decoration induces considerable modifications in the pristine WS₂ band gap, which varies upon gas adsorption. The band gap values reduce to 0.1, 0.2, 0.3, 0.5, and 0.6 eV for SO₂, SO₂F₂, H₂S, HF, and SOF₂, adsorption, corresponding to sensing responses of 84.3 %, 61.6 %, 71.1 %, 49.8 %, and 40.6 %, respectively. This leads to a comparatively slow desorption rate of 2.15 × 10¹² s at 300 K, which was reduced to 85 ms by exposure to UV illumination, demonstrating great reusability. These results specify that Ti-WS₂ monolayers can be positively used as effective and recyclable SF₆ decomposition gas sensors.

目前的工作利用DFT研究来检查钛修饰WS2 （Ti-WS2）单层的结构、电子和气敏性质。计算得到的结合能为−2.40 eV，与Ti掺入的热力学稳定性一致，表明了Ti在WS2晶格中W位取代的可行性。研究了SF6重要分解产物SO2、SO2F2、H2S、HF和SOF2的吸附参数。Ti-WS2单层膜与这些物质表现出较强的化学吸附作用，吸附能分别为- 1.71、- 1.66、- 1.54、- 1.45和- 1.34 eV，具有较高的亲和力和选择性吸附能力。电子结构分析表明，Ti修饰引起原始WS2带隙的显著变化，其变化随气体吸附而变化。SO2、SO2F2、H2S、HF和SOF2的带隙值分别降至0.1、0.2、0.3、0.5和0.6 eV，对应的传感响应分别为84.3%、61.6%、71.1%、49.8%和40.6%。这导致相对较慢的解吸速率为2.15 × 1012 s，在300 K下，暴露于紫外线照射下，解吸速率降低到85 ms，显示出良好的可重复使用性。这些结果表明，Ti-WS2单层膜可以作为有效的、可回收的SF6分解气体传感器。

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引用次数: 0

CO2 adsorption on ZIF-8 powder: Combined experimental and theoretical study with SPR sensor integration ZIF-8粉体对CO2的吸附：SPR传感器集成的实验与理论结合研究

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-05-01 Epub Date: 2026-02-03 DOI: 10.1016/j.micrna.2026.208599

Abdelhak Dhibi , Jabir Hakami , Chaker Briki , Nordin Felidj , Nadia Djaker

This investigation introduces an innovative synergy between advanced statistical physics modeling and surface plasmon resonance (SPR) sensor design, enabling enhanced analysis and real-time detection of CO₂ adsorption on ZIF-8 powder. To this end, a sophisticated monolayer adsorption model rooted in statistical physics was applied to fit and interpret experimental pressure-composition-temperature (PCT) isotherms reported in the literature [12], acquired at temperatures of 25 °C, 45 °C, 60 °C, and 80 °C. From the model fitting, key thermodynamic and microscopic parameters were extracted, including the receptor site density (N), the number of CO₂ molecules adsorbed per site (n), and the half-saturation pressure (P_hs). The temperature-dependent evolution of these parameters offers valuable insights into the adsorption mechanism and the nature of CO₂-ZIF-8 interactions. Furthermore, the adsorption energy was determined, providing a quantitative assessment of the interaction strength and adsorption affinity of the system. Based on this statistical approach, we developed an application to detect the quantity of CO₂ adsorbed using a surface plasmon resonance (SPR) sensor. Accordingly, the sensitivity of the proposed SPR sensor was evaluated under varying temperature and pressure conditions, highlighting its potential for practical gas sensing applications.

本研究引入了先进的统计物理建模和表面等离子体共振（SPR）传感器设计之间的创新协同作用，从而增强了对ZIF-8粉末上CO2吸附的分析和实时检测。为此，基于统计物理的复杂单层吸附模型被应用于拟合和解释文献b[12]中在25°C、45°C、60°C和80°C下获得的实验压力-成分-温度（PCT）等温线。从模型拟合中提取了关键的热力学和微观参数，包括受体位点密度(N)、每个位点吸附的CO2分子数(N)和半饱和压力（ph）。这些参数的温度依赖演化为CO2-ZIF-8的吸附机制和相互作用的性质提供了有价值的见解。进一步测定了吸附能，定量评价了体系的相互作用强度和吸附亲和力。基于这种统计方法，我们开发了一种使用表面等离子体共振（SPR）传感器检测CO2吸附量的应用程序。因此，在不同温度和压力条件下评估了所提出的SPR传感器的灵敏度，突出了其实际气体传感应用的潜力。

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引用次数: 0

Effect of low-concentration boron incorporation on the structural coherence and phonon modes of layered GaSe 低浓度硼掺入对层状GaSe结构相干性和声子模式的影响

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-05-01 Epub Date: 2026-02-07 DOI: 10.1016/j.micrna.2026.208604

Lamiya Balayeva , Ali Guseinov , Fidan Akhmedova , Mehmet Isik

Single crystals of

{Ga}_{1 - x} B_{x} Se

(x = 0.3, 0.5, and 1.0%) were grown using the horizontal Bridgman technique and comprehensively studied to evaluate how low-level boron incorporation influences their structural, morphological, and vibrational characteristics. X-ray diffraction analysis confirmed that all samples retained the ε-GaSe hexagonal structure and exhibited exclusively (00l) reflections, indicating strong c-axis orientation, high crystallinity, and the formation of a single-phase solid solution. Increasing boron content enhanced the intensity of higher-order reflections, revealing improved stacking order and structural coherence. SEM observations showed the typical layered morphology of GaSe, while boron doping produced thicker and more compact layers, suggesting increased interlayer coupling associated with lattice contraction. Raman spectroscopy further verified the preservation of the characteristic A₁g, E₁g, and E₂g modes. Subtle phonon shifts, FWHM broadening, and intensity variations with increasing boron concentration indicated lattice strain, phonon stiffening, and enhanced local disorder.

采用水平Bridgman技术培养Ga1−xBxSe （x = 0.3, 0.5和1.0%）单晶，并对其进行综合研究，以评估低硼掺入对其结构，形态和振动特性的影响。x射线衍射分析证实，所有样品均保留ε-GaSe的六边形结构，并表现出（00l）反射，表明样品具有强的c轴取向，结晶度高，形成了单相固溶体。硼含量的增加增强了高阶反射的强度，表明层序和结构相干性得到改善。SEM观察显示GaSe具有典型的层状形貌，而硼掺杂后的GaSe层更厚、更致密，表明层间耦合增加与晶格收缩有关。拉曼光谱进一步验证了A1g、E1g和E2g模式特征的保存。随着硼浓度的增加，细微的声子位移、FWHM展宽和强度变化表明晶格应变、声子硬化和局部无序增强。

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引用次数: 0

Advantages of AlGaN-based 275-nm deep-ultraviolet LEDs with a tapered N-shaped aluminum-composition graded electron blocking layer 具有锥形n形铝成分梯度电子阻挡层的algan基275-nm深紫外led的优点

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures

Pub Date : 2026-05-01 Epub Date: 2026-02-08 DOI: 10.1016/j.micrna.2026.208602

Biao Shen , Taiping Lu , Yifan Zhang , Xiantian Shi , Zhigang Jia , Xiansheng Tang , Zhen Deng , Zhongqiang Wang , Yadan Zhu , Lichun Zhang

A tapered N-shaped aluminum-composition graded electron blocking layer (EBL) was proposed to mitigate electron leakage and enhance hole injection for AlGaN-based deep-ultraviolet (DUV) LEDs emitting around 275 nm. The optical and electrical performances of the metal-polar LEDs are simulated by the APSYS software. The tapered N-shaped graded AlGaN layer alters the electric field distribution both in the EBL and the active region, thereby modulating its closely related band tilting. Consequently, the barrier height for electrons increases from 347.8 to 374.7 meV, while that for holes decreases from 469.9 to 345.2 meV. The augment of barrier height for electrons and decrease of barrier height for holes contribute to the enhancement of electron confinement and hole injection. Furthermore, the polarization electric field within quantum wells is reduced, which is beneficial for enhancing the radiative recombination efficiency. At an injection current density of 100 A/cm², an enhancement of 33.9% in the light output power and 34.3% in the internal quantum efficiency are achieved for the proposed structure. These results demonstrate that the tapered N-shaped composition graded EBL can effectively regulate carrier transport in the vicinity of the p-n junction, which provides a promising approach for enhancing the performance of AlGaN-based DUV LEDs.

提出了一种锥形n形铝成分梯度电子阻挡层（EBL），用于发光波长约275 nm的algan基深紫外（DUV） led，以减少电子泄漏和增强空穴注入。利用APSYS软件对金属极led的光学和电学性能进行了仿真。逐渐变细的n形梯度AlGaN层改变了EBL和有源区的电场分布，从而调节了与之密切相关的能带倾斜。因此，电子的势垒高度从347.8增加到374.7 meV，而空穴的势垒高度从469.9降低到345.2 meV。电子势垒高度的增加和空穴势垒高度的降低有助于电子约束和空穴注入的增强。此外，量子阱内的极化电场减小，有利于提高辐射复合效率。在注入电流密度为100 A/cm2时，该结构的光输出功率提高了33.9%，内部量子效率提高了34.3%。这些结果表明，锥形n型成分梯度EBL可以有效地调节p-n结附近的载流子输运，这为提高algan基DUV led的性能提供了一条有前途的途径。

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引用次数: 0