Anomalous Hall effect and topological Hall effect in Kagome lattice material Yb0.90Mn6Ge3.25Ga0.39 single crystal

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Scripta Materialia Pub Date : 2024-09-04 DOI:10.1016/j.scriptamat.2024.116345

Bodong Lv , Rui Zhong , Xiaohua Luo , Shengcan Ma , Changcai Chen , Sujuan Wang , Qing Luo , Fei Gao , Chunsheng Fang , Weijun Ren

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Abstract

Kagome lattice, made of corner-sharing triangles, provides an excellent platform for hosting exotic topological quantum phases. Here, we report the observation of large anomalous Hall effect and topological Hall effect in the Kagome lattice material Yb_0.90Mn₆Ge_3.25Ga_0.39 single crystal. Compared to the antiferromagnetic pristine compound YbMn₆Ge₆, Yb_0.90Mn₆Ge_3.25Ga_0.39 has an easy plane ferromagnetic structure below 361 K and presents a spin-reorientation transition at 218 K. An intrinsic anomalous Hall conductivity with the value of 604.2 Ω^-1·cm^-1 is obtained in Yb_0.90Mn₆Ge_3.25Ga_0.39, which is the largest in RMn₆X₆ (X = Ge and Sn) family. Besides, a remarkable topological Hall signal is also observed near room temperature. The topological Hall resistivity of Yb_0.90Mn₆Ge_3.25Ga_0.39 is determined to be -1.86 μΩ·cm at 280 K under μ₀H = 0.3 T. Our results indicate that Yb_0.90Mn₆Ge_3.25Ga_0.39 may be an excellent platform to study the relationship between the magnetic and electronic structure and to explore novel quantum phenomenon.

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卡戈米晶格材料 Yb0.90Mn6Ge3.25Ga0.39 单晶中的反常霍尔效应和拓扑霍尔效应

由分角三角形组成的 Kagome 晶格为容纳奇异的拓扑量子相提供了一个极好的平台。在这里，我们报告了在 Kagome 晶格材料 Yb0.90Mn6Ge3.25Ga0.39 单晶中观察到的大反常霍尔效应和拓扑霍尔效应。与反铁磁性原始化合物 YbMn6Ge6 相比，Yb0.90Mn6Ge3.25Ga0.39 在 361 K 以下具有简单的平面铁磁性结构，并在 218 K 时出现自旋取向转变。此外，在室温附近还观察到了显著的拓扑霍尔信号。我们的结果表明，Yb0.90Mn6Ge3.25Ga0.39 可能是研究磁结构与电子结构之间关系以及探索新量子现象的绝佳平台。

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来源期刊

Scripta Materialia 工程技术-材料科学：综合

CiteScore

11.40

自引率

5.00%

发文量

581

审稿时长

34 days

期刊介绍： Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.