A Broadband Low Conversion Loss Single-Ended Resistive Mixer With an Innovative Topology

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-07-12 DOI:10.1109/LMWT.2024.3376714
Tingwei Gong;Zhiqun Cheng;Chao Le;Xuefei Xuan;Bangjie Zheng;Zhiwei Zhang;Minshi Jia
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Abstract

To achieve better broadband performance and lower conversion loss (CL), a mixer using an innovative mixing unit is proposed in this letter, which contains two gallium arsenide (GaAs) pseudomorphic high electron mobility transistors (pHEMTs) and a coupled capacitor. Leveraging the analysis and the equivalent circuit of the proposed topology, the minimum local oscillator (LO) power ( $P_{\mathrm {LO},\min }$ ) and CL of the mixer are deduced and calculated. The analysis concluded that the ratio of the maximum time-varying impedance to the minimum time-varying impedance of the mixing unit maintains a substantial value across a wide frequency band, indicating enhanced broadband characteristics and reduced CL. In addition, based on the proposed topology and analysis, a single-ended mixer with a radio frequency (RF) range of 2–22 GHz and an intermediate frequency (IF) fixed at 100 MHz was implemented using the Sanan 0.15- $\mu $ m GaAs pHEMT process. With a 15-dBm LO power, the test results of this mixer reveal a 10-dB CL and 20-dB isolation within the operating frequency range of 2–22 GHz. The designed single-ended mixer monolithic microwave integrated circuit (MMIC) achieves a fractional bandwidth (FBW) of 166% and occupies a chip area of $0.7\times 1$ mm2.
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采用创新拓扑结构的宽带低转换损耗单端电阻式混频器
为了实现更好的宽带性能和更低的转换损耗(CL),本文提出了一种使用创新混频单元的混频器,其中包含两个砷化镓(GaAs)拟态高电子迁移率晶体管(pHEMT)和一个耦合电容器。利用对所提拓扑结构的分析和等效电路,推导并计算了混频器的最小本振(LO)功率($P_{\mathrm {LO},\min }$)和CL。分析结果表明,混频单元的最大时变阻抗与最小时变阻抗之比在很宽的频段内都保持了很大的数值,这表明宽带特性增强,CL 减小。此外,基于所提出的拓扑结构和分析,利用Sanan 0.15- $\mu $ m GaAs pHEMT工艺实现了射频(RF)范围为2-22 GHz、中频(IF)固定为100 MHz的单端混频器。在 15 dBm LO 功率下,该混频器的测试结果显示在 2-22 GHz 工作频率范围内具有 10 dB CL 和 20 dB 隔离度。所设计的单端混频器单片微波集成电路(MMIC)实现了 166% 的分数带宽(FBW),占用芯片面积为 0.7 美元乘 1 美元 mm2。
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