Study on the performance of InGaN-based micro-LED by plasma etching combined with ion implantation process

Abstract

This study utilized blue-light epitaxial wafers and employed semiconductor processes such as maskless laser writing, dry etching, wet etching, passivation layer deposition, electron beam evaporation, and ion implantation to fabricate micro-light emitting diode (μLED) arrays with different pixel sizes but the same emitting area (900 μm²). The μLED arrays with single pixel sizes of 5 μm, 10 μm, and 15 μm were fabricated, with array numbers of 6×6, 3×3, and 2×2, respectively. This study proposes etching the material in the channel region while retaining a certain width for implantation, known as the sidewall ion implantation process, aiming to achieve better insulation characteristics by using ion implantation technology to insulate the sidewall regions. It involves ion bombardment of the defect areas generated after plasma etching and the use of a passivation layer for protection. The isolation characteristics of μLED arrays processed by sidewall implantation exhibited better electrical isolation than those of μLED arrays processed only by plasma. The light output power, external quantum efficiency, and wall-plug efficiency were all superior for the sidewall implantation process when the device was miniaturized to 5 μm. Overall, the sidewall implantation process combined with plasma dry etching effectively improved the light output characteristics, with the enhancement ratio increasing as the device was miniaturized.