UV-activated heterojunction in BaTiO3 decorated ZnO nanorods for faster and more efficient photodetector

IF 4.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2024-09-04 DOI:10.1016/j.sna.2024.115877
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Abstract

This study explores the improved ultraviolet (UV) photodetection performance of ZnO nanorods (ZnO NRs) decorated with BaTiO3 nanoparticles (BT NPs) synthesized using a novel vapor-thermal method (VTM) leading to the formation of a heterojunction upon UV activation that enhances charge separation and reduces charge carrier’s recombination. Initially, ZnO NRs were prepared via a hydrothermal method followed by decoration with BT NPs using the innovative VTM process. To elucidate the morphology and composition of the BT-decorated ZnO NRs, a comprehensive characterization was performed using various techniques, including field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD). Photoluminescence (PL) and diffuse reflectance spectroscopy (DRS) are employed to study electronic band structure of the BT decorated and undecorated samples. The BT nanoparticle-decorated ZnO NRs exhibited a higher photodetection performance compared to bare ZnO NRs under 365 nm UV light illumination. This improvement is manifested by a lower dark current, a faster rise time (from 2 s to 0.75 s), a shorter decay time (from 46 s to 0.96 s), and higher sensitivity (from 57 to 135). These findings demonstrate the promising potential of the BT nanoparticle-decorated ZnO NRs for application in high-performance UV photodetectors.

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紫外线激活氧化钡(BaTiO3)装饰氧化锌纳米棒中的异质结,实现更快、更高效的光电探测器
本研究探讨了用新型气热法(VTM)合成的 ZnO 纳米棒(ZnO NRs)与 BaTiO3 纳米粒子(BT NPs)装饰后的紫外线(UV)光探测性能的改善情况,该方法可在紫外线激活时形成异质结,从而增强电荷分离并减少电荷载流子的重组。首先通过水热法制备 ZnO NRs,然后使用创新的 VTM 工艺装饰 BT NPs。为了阐明 BT 装饰 ZnO NRs 的形貌和组成,研究人员采用了多种技术对其进行了全面表征,包括场发射扫描电子显微镜(FESEM)、透射电子显微镜(TEM)、X 射线光电子能谱(XPS)和 X 射线衍射(XRD)。光致发光(PL)和漫反射光谱(DRS)用于研究 BT 装饰和未装饰样品的电子能带结构。在 365 nm 紫外光照射下,与裸 ZnO NR 相比,BT 纳米粒子装饰的 ZnO NR 表现出更高的光探测性能。这种改进表现在暗电流更低、上升时间更快(从 2 秒到 0.75 秒)、衰减时间更短(从 46 秒到 0.96 秒)以及灵敏度更高(从 57 到 135)。这些研究结果表明,BT 纳米粒子装饰的 ZnO NRs 在高性能紫外光检测器中具有广阔的应用前景。
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来源期刊
Sensors and Actuators A-physical
Sensors and Actuators A-physical 工程技术-工程:电子与电气
CiteScore
8.10
自引率
6.50%
发文量
630
审稿时长
49 days
期刊介绍: Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...
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