{"title":"Enhancing efficiency in a-Si:H/μc-Si micromorph tandem solar cells through advanced light-trapping techniques using ARC, TRJ, and DBR","authors":"Saeed Khosroabadi, Ramisa Eghbali, Anis Shokouhmand","doi":"10.1186/s40712-024-00174-8","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, the performance of a-Si:H/μc-Si:H tandem solar cells was comprehensively assessed through two-dimensional numerical simulations. Our work involved optimizing the layer thicknesses and exploring advanced light-trapping techniques to enhance photogenerated current in both sub-cells. To reduce surface reflections on the top cell, we proposed a two-layer antireflection coating, composed of SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub>. Additionally, we implemented a 1D photonic crystal as a broadband back reflector within the solar cell. In order to balance the current density between the sub-cells and prevent carrier accumulation at the interface, we introduced a tunnel recombination junction (TRJ). This TRJ consisted of n-μc-Si:H/p-μc-Si:H layers with a thickness of 10 nm. Under global AM 1.5G conditions, our proposed cell structure exhibited impressive electrical characteristics, including an open-circuit voltage of 1.38 V, a short-circuit current density of 12.51 mA/cm<sup>2</sup>, and a fill factor of 80.82%. These attributes culminated in a remarkable total area conversion efficiency of 14%.</p></div>","PeriodicalId":592,"journal":{"name":"International Journal of Mechanical and Materials Engineering","volume":"19 1","pages":""},"PeriodicalIF":3.4000,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://jmsg.springeropen.com/counter/pdf/10.1186/s40712-024-00174-8","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Mechanical and Materials Engineering","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1186/s40712-024-00174-8","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, the performance of a-Si:H/μc-Si:H tandem solar cells was comprehensively assessed through two-dimensional numerical simulations. Our work involved optimizing the layer thicknesses and exploring advanced light-trapping techniques to enhance photogenerated current in both sub-cells. To reduce surface reflections on the top cell, we proposed a two-layer antireflection coating, composed of SiO2/Si3N4. Additionally, we implemented a 1D photonic crystal as a broadband back reflector within the solar cell. In order to balance the current density between the sub-cells and prevent carrier accumulation at the interface, we introduced a tunnel recombination junction (TRJ). This TRJ consisted of n-μc-Si:H/p-μc-Si:H layers with a thickness of 10 nm. Under global AM 1.5G conditions, our proposed cell structure exhibited impressive electrical characteristics, including an open-circuit voltage of 1.38 V, a short-circuit current density of 12.51 mA/cm2, and a fill factor of 80.82%. These attributes culminated in a remarkable total area conversion efficiency of 14%.