High-Performance White-Light Detection of Inorganic/Perovskite Mixed Quantum Dot Layers Fabricated by Drop-Casting Methods

IF 4.3 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-08-13 DOI:10.1109/JSTQE.2024.3442990

Dung-Sheng Tsai;Chao-Yu Tiao;Xiu-Qi Yu;Hsin-Ying Lee;Wei-Chen Tu

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Abstract

CdZnS/ZnS + CsPbBr ₃ + InP/ZnSeS mixed quantum dot (QD) based metal–semiconductor–metal photodetectors (MSM PDs) for white-light detection were fabricated successfully by low-cost drop-cast methods. The photoluminescence (PL) spectra reveal emission peaks of ∼ 430 nm (blue light), ∼515 nm (green light), and ∼600 nm (red light) for CdZnS/ZnS, CsPbBr ₃ , and InP/ZnSeS QDs, respectively. Furthermore, CdZnS/ZnS + CsPbBr ₃ + InP/ZnSeS mixed QDs exhibit a broad absorption spectrum from ultraviolet (UV) to infrared (IR), in contrast to the narrower absorption range of CdZnS/ZnS, CsPbBr ₃ , and InP/ZnSeS QDs. The morphology and size of CdZnS/ZnS (∼10 nm), CsPbBr ₃ (∼12 nm), and InP/ZnSeS (∼ 5 nm) QDs were investigated using high-resolution transmission electron microscopy (HRTEM). With switching on/off white-light illumination, CdZnS/ZnS + CsPbBr ₃ + InP/ZnSeS mixed QD-based MSM PDs exhibit outstanding performance attributed to the broadband light absorption of the mixed QDs, including an ultra-high photo-to-dark current ratio (PDCR: ∼590), high detectivity (up to ∼0.7 × 10 ¹⁰ cm Hz ^1/2 /W), and fast operation speed (rise time and fall time: ∼150 ms). Compared to the CdZnS/ZnS + InP/ZnSeS mixed QD-based PDs, the CdZnS/ZnS + CsPbBr ₃ + InP/ZnSeS mixed QD-based PDs show better photoresponse, resulting from higher photocurrent levels by an increase in green light absorption and a decrease in band offset at the interface after adding CsPbBr ₃ QDs. These results support the use of the inorganic/perovskite mixed QD-based PDs in next-generation broadband photodetection.

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用滴铸法制造的无机/珀罗维斯基特混合量子点层的高性能白光探测功能

采用低成本滴铸方法成功制备了基于 CdZnS/ZnS + CsPbBr3 + InP/ZnSeS 混合量子点（QD）的金属-半导体-金属光电探测器（MSM PDs），用于白光检测。光致发光（PL）光谱显示，CdZnS/ZnS、CsPbBr3 和 InP/ZnSeS QD 的发射峰分别为 430 nm（蓝光）、515 nm（绿光）和 600 nm（红光）。此外，与 CdZnS/ZnS、CsPbBr3 和 InP/ZnSeS QDs 较窄的吸收范围相比，CdZnS/ZnS + CsPbBr3 + InP/ZnSeS 混合 QDs 表现出从紫外线（UV）到红外线（IR）的宽吸收光谱。利用高分辨率透射电子显微镜（HRTEM）研究了 CdZnS/ZnS（∼ 10 nm）、CsPbBr3（∼ 12 nm）和 InP/ZnSeS （∼ 5 nm）QDs 的形态和尺寸。在开关白光照明下，基于 CdZnS/ZnS + CsPbBr3 + InP/ZnSeS 混合 QD 的 MSM PD 由于混合 QD 的宽带光吸收而表现出卓越的性能，包括超高的光暗电流比（PDCR：∼590）、高检测率（高达 ∼0.7 × 1010 cm Hz1/2/W）、运行速度快（上升时间和下降时间：∼150 ms）。与 CdZnS/ZnS + InP/ZnSeS 混合型 QD 基光导器件相比，CdZnS/ZnS + CsPbBr3 + InP/ZnSeS 混合型 QD 基光导器件显示出更好的光响应，在加入 CsPbBr3 QD 后，绿光吸收增加，界面带偏移减少，从而产生了更高的光电流。这些结果支持在下一代宽带光探测中使用无机/过氧化物混合 QD 基 PD。

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来源期刊

IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

10.60

自引率

2.00%

发文量

212

审稿时长

3 months

期刊介绍： Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.