The effect of strontium doping on optoelectrical properties of V2O5/p-Si photodiode

Abstract

In recent years, the demand for efficient photodetectors within optoelectronic technology has driven the development of layered semiconductor materials at affordable prices. This study focuses on the fabrication of V₂O₅ thin films on glass and p-Si substrates with varying Sr content (0, 1, 3, and 5 wt%) using a cost-effective the perfume atomizer spray technique. The effect of Sr dopant on the morphological, structural, optical and electrical properties of V₂O₅ thin film was examined using standard characterization techniques such as XRD, AFM, UV–Vis, Hall measurement and I–V techniques. Doping V₂O₅ with low Sr content of 1, 3, and 5 wt% significantly impacts the lattice, as evidenced by changes in the orthorhombic structures. The resulting thin films exhibit bandgap values ranging from 2.50 to 2.64 eV. Hall Effect measurements at room temperature revealed n-type conduction for all samples. The study found that doping increases the carrier concentration, leading to a decrease in the resistivity of V₂O₅ by incorporating the dopant into the V₂O₅ matrix. Furthermore, Sr-doped V₂O₅ thin films were deposited on p-Si substrates to form p-n junctions. The voltage-current characteristics of the fabricated diodes were investigated under both dark and illuminated conditions.