Pub Date : 2025-03-24DOI: 10.1016/j.optmat.2025.116978
B. Ajay Kumar , B. Sreenivas , P. Indira , A.K. Bhatnagar , P. Hima Bindu
Structural, optical, thermal and electrical properties of (1-x)[50B2O3–30Li2O–20BaO]-xSm2O3 glasses [where x=0, 0.2, 0.4, 0.6, 0.8 and 1.0 mol%], synthesized by using a traditional melt-quenching technique, are reported in this paper. XRD, SEM/EDX studies on these glasses confirm the glassy structure and also their elemental composition. The densities of the samples, declined from 3.094 to 3.045 g/cm3, as the concentration of the dopant Sm2O3 increased, while the molar volume increased from 24.059 to 24.986 cm3/mol. FTIR, Raman spectra and UV–Vis spectra of these glasses to determine their optical characteristics. The direct and indirect band gap energies of the glass samples varied in the ranges of 3.99–3.74 eV and 3.01–2.71 eV, respectively. A decline in the Urbach energy from 0.43 to 0.32 eV is observed with increase of the dopant. The obtained results are discussed with reference to the structural changes in the glass network. The glass transition temperature increased by increasing the dopant concentration and the heating rate according to the DSC analysis of the formed glasses. The activation energy of the glass transition also increased with the dopant concentration. The variation of the DC conductivity with temperature was studied to understand electronic transport phenomena in these glasses.
{"title":"Sm2O3 modulated structural, optical, thermal and electrical properties of LiBaBO3 glasses","authors":"B. Ajay Kumar , B. Sreenivas , P. Indira , A.K. Bhatnagar , P. Hima Bindu","doi":"10.1016/j.optmat.2025.116978","DOIUrl":"10.1016/j.optmat.2025.116978","url":null,"abstract":"<div><div>Structural, optical, thermal and electrical properties of (1-x)[50B<sub>2</sub>O<sub>3</sub>–30Li<sub>2</sub>O–20BaO]-xSm<sub>2</sub>O<sub>3</sub> glasses [where x=0, 0.2, 0.4, 0.6, 0.8 and 1.0 mol%], synthesized by using a traditional melt-quenching technique, are reported in this paper. XRD, SEM/EDX studies on these glasses confirm the glassy structure and also their elemental composition. The densities of the samples, declined from 3.094 to 3.045 g/cm<sup>3</sup>, as the concentration of the dopant Sm<sub>2</sub>O<sub>3</sub> increased, while the molar volume increased from 24.059 to 24.986 cm<sup>3</sup>/mol. FTIR, Raman spectra and UV–Vis spectra of these glasses to determine their optical characteristics. The direct and indirect band gap energies of the glass samples varied in the ranges of 3.99–3.74 eV and 3.01–2.71 eV, respectively. A decline in the Urbach energy from 0.43 to 0.32 eV is observed with increase of the dopant. The obtained results are discussed with reference to the structural changes in the glass network. The glass transition temperature increased by increasing the dopant concentration and the heating rate according to the DSC analysis of the formed glasses. The activation energy of the glass transition also increased with the dopant concentration. The variation of the DC conductivity with temperature was studied to understand electronic transport phenomena in these glasses.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116978"},"PeriodicalIF":3.8,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-22DOI: 10.1016/j.optmat.2025.116969
Bo Zhang , Xiaoxing Yan , Shengli Liu , Enze Wu , Yuanyuan Tian
Electrochromic materials can show reversible optical changes under the small applied voltages, which have the great application prospects in smart window, energy storage, thermal control fields. In the practical application of electrochromic materials, fast responsiveness and stable periodicity are urgently needed. In this study, the nanoporous Nd-doped TiO2 (TNO) films are synthesized by the hydrothermal method, and then polydopamine (PDA) is coated on the surfaces of TNO films to prepare TNO-Pt films (t = 15, 30, 60 and 120). TNO-Pt films have the wider transmittance modulations and larger surface capacitances than that of TNO film. Moreover, TNO-Pt films have shorter response times and higher cycle stability due to PDA films enhance the interface ion transfer properties and electrochemical stability of nanoporous TNO films. In particular, the coloring and bleaching times of the TNO-P60 film is 12.4 and 18.3 s, and retained 91.7 % of the initial transmittance modulation (70.3 %) after 2000 cycles. In addition, the surface capacitance of TNO film modified by PDA can be risen to 238 %. Therefore, TNO-Pt films can be used as one candidate material for electrochromic energy saving and storage window.
{"title":"Polydopamine modified Nd-doped TiO2 films for improved electrochromism and energy storage","authors":"Bo Zhang , Xiaoxing Yan , Shengli Liu , Enze Wu , Yuanyuan Tian","doi":"10.1016/j.optmat.2025.116969","DOIUrl":"10.1016/j.optmat.2025.116969","url":null,"abstract":"<div><div>Electrochromic materials can show reversible optical changes under the small applied voltages, which have the great application prospects in smart window, energy storage, thermal control fields. In the practical application of electrochromic materials, fast responsiveness and stable periodicity are urgently needed. In this study, the nanoporous Nd-doped TiO<sub>2</sub> (TNO) films are synthesized by the hydrothermal method, and then polydopamine (PDA) is coated on the surfaces of TNO films to prepare TNO-P<sub>t</sub> films (t = 15, 30, 60 and 120). TNO-P<sub>t</sub> films have the wider transmittance modulations and larger surface capacitances than that of TNO film. Moreover, TNO-P<sub>t</sub> films have shorter response times and higher cycle stability due to PDA films enhance the interface ion transfer properties and electrochemical stability of nanoporous TNO films. In particular, the coloring and bleaching times of the TNO-P<sub>60</sub> film is 12.4 and 18.3 s, and retained 91.7 % of the initial transmittance modulation (70.3 %) after 2000 cycles. In addition, the surface capacitance of TNO film modified by PDA can be risen to 238 %. Therefore, TNO-P<sub>t</sub> films can be used as one candidate material for electrochromic energy saving and storage window.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116969"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143680677","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-22DOI: 10.1016/j.optmat.2025.116973
Bingguo Liu , Yanghan Guo , Yangzi Li , Shiqing Pang , Shunzi Li , Peng Xu , Dan Zhao , Carsten Dam-Hansen , Jian Xu , Baoli Du , Ole Bjarlin Jensen
Phosphor-in-glass film (PiG-film) displays great potential for high performance laser-driven white lighting, benefiting from its facile fabrication and high efficiency. However, the low thermal conductivity of the glass matrix may lead to thermal quenching of phosphors and limit the maximum luminous flux of the light source. Here, boron nitride (BN) with high thermal conductivity and low absorption coefficient was embedded into Y3Al5O12:Ce PiG-film to facilitate the heat-transfer process, and to regulate the propagation of both laser and fluorescence. The influences of BN particle size and doping concentration on surface morphology (pore formation), luminescence saturation threshold (LST), luminous flux, and the spatial distribution of correlated color temperature (CCT) were investigated and correlated. Moreover, the luminescence spot confinement was analyzed and luminous exitance was obtained. Benefiting from the formation of effective BN heat-transfer network, the luminous efficacy of both YAG-45-2 % and YAG-45-1 % films surpass the non-doped one as laser power density >19.00 W/mm2. A LST higher than 27.04 W/mm2 was observed in YAG-45-2 % film, more than 42 % higher than the non-doped one. Though the extra reflection of blue laser by BN particles downgrades the CCT spatial distribution uniformity, the particles strongly scatter the fluorescence and restrict the fluorescence-emitting spot (diameter) expansion from 307 to 174 μm, and a high luminous exitance of 1614 lm/mm2 was achieved in YAG-45-2 % film. These results firmly demonstrate that incorporation of particles with high thermal conductivity and low absorption coefficient in PiG-film is a feasible strategy for achieving high-brightness laser lighting.
{"title":"Enhanced luminous exitance and saturation threshold of Y3Al5O12:Ce phosphor-in-glass films via incorporation of highly thermally conductive boron nitride particles","authors":"Bingguo Liu , Yanghan Guo , Yangzi Li , Shiqing Pang , Shunzi Li , Peng Xu , Dan Zhao , Carsten Dam-Hansen , Jian Xu , Baoli Du , Ole Bjarlin Jensen","doi":"10.1016/j.optmat.2025.116973","DOIUrl":"10.1016/j.optmat.2025.116973","url":null,"abstract":"<div><div>Phosphor-in-glass film (PiG-film) displays great potential for high performance laser-driven white lighting, benefiting from its facile fabrication and high efficiency. However, the low thermal conductivity of the glass matrix may lead to thermal quenching of phosphors and limit the maximum luminous flux of the light source. Here, boron nitride (BN) with high thermal conductivity and low absorption coefficient was embedded into Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub>:Ce PiG-film to facilitate the heat-transfer process, and to regulate the propagation of both laser and fluorescence. The influences of BN particle size and doping concentration on surface morphology (pore formation), luminescence saturation threshold (LST), luminous flux, and the spatial distribution of correlated color temperature (CCT) were investigated and correlated. Moreover, the luminescence spot confinement was analyzed and luminous exitance was obtained. Benefiting from the formation of effective BN heat-transfer network, the luminous efficacy of both YAG-45-2 % and YAG-45-1 % films surpass the non-doped one as laser power density >19.00 W/mm<sup>2</sup>. A LST higher than 27.04 W/mm<sup>2</sup> was observed in YAG-45-2 % film, more than 42 % higher than the non-doped one. Though the extra reflection of blue laser by BN particles downgrades the CCT spatial distribution uniformity, the particles strongly scatter the fluorescence and restrict the fluorescence-emitting spot (diameter) expansion from 307 to 174 μm, and a high luminous exitance of 1614 lm/mm<sup>2</sup> was achieved in YAG-45-2 % film. These results firmly demonstrate that incorporation of particles with high thermal conductivity and low absorption coefficient in PiG-film is a feasible strategy for achieving high-brightness laser lighting.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116973"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-22DOI: 10.1016/j.optmat.2025.116971
Allaa A. Jabbar, Raid A. Ismail, Alwan M. Alwan
In light of their outstanding physical and chemical traits, nanostructured devices have attracted significant attention. In light of their outstanding physical and chemical traits, nanostructured devices have attracted significant attention. The manipulation of the dimensions and morphology of nanostructured surfaces could precisely adjust these characteristics. In this work, porous silicon (PSi) was synthesized through a laser-assisted electrochemical etching method. The porous silicon was embedded with tungsten trioxide WO3 nanoparticles (NPs), which were synthesized using liquid phase laser ablation at different laser fluences. X-ray diffraction (XRD) analysis verified the synthesis of tungsten oxide nanoparticles in a crystalline form featuring a monoclinic structure, which was integrated into the porous silicon matrix. Investigations utilizing scanning electron microscopy (SEM) and transmission electron microscopy (TEM) exhibited the development of spherical tungsten oxide nanoparticles, featuring diameters ranging from 110 to 153 nm, upon the laser fluence employed. SEM analysis further showed that the average pore diameter of the porous silicon was 1.6 μm, with the tungsten oxide nanoparticles embedded inside the pores. Optical measurements indicated that the tungsten oxide energy gap was 3.2 eV at a laser fluence of 51 J/cm2 and rose to 3.55 eV as the laser fluence increased to 71 J/cm2. Zeta potential studies indicated that the nanoparticles formed at 61 J/cm2 were stable. The optoelectronic properties of WO3 nanoparticle-embedded PSi/c-Si heterojunction photodetectors fabricated at different laser fluences were also investigated. A responsivity of 1.35 A/W was attained at a wavelength of 450 nm when the device was fabricated using 61 J/cm2 laser fluence. The WO3-embedded PSi gas sensor synthesized at a 61 J/cm2 energy fluence exhibited the highest CO gas sensitivity, with a 63 % response at 20.2 ppm.
{"title":"WO3 nanoparticles-embedded porous silicon: Dual-function materials synthesized via laser ablation and electrochemical etching for advanced photodetection and gas sensing applications","authors":"Allaa A. Jabbar, Raid A. Ismail, Alwan M. Alwan","doi":"10.1016/j.optmat.2025.116971","DOIUrl":"10.1016/j.optmat.2025.116971","url":null,"abstract":"<div><div>In light of their outstanding physical and chemical traits, nanostructured devices have attracted significant attention. In light of their outstanding physical and chemical traits, nanostructured devices have attracted significant attention. The manipulation of the dimensions and morphology of nanostructured surfaces could precisely adjust these characteristics. In this work, porous silicon (PSi) was synthesized through a laser-assisted electrochemical etching method. The porous silicon was embedded with tungsten trioxide WO<sub>3</sub> nanoparticles (NPs), which were synthesized using liquid phase laser ablation at different laser fluences. X-ray diffraction (XRD) analysis verified the synthesis of tungsten oxide nanoparticles in a crystalline form featuring a monoclinic structure, which was integrated into the porous silicon matrix. Investigations utilizing scanning electron microscopy (SEM) and transmission electron microscopy (TEM) exhibited the development of spherical tungsten oxide nanoparticles, featuring diameters ranging from 110 to 153 nm, upon the laser fluence employed. SEM analysis further showed that the average pore diameter of the porous silicon was 1.6 μm, with the tungsten oxide nanoparticles embedded inside the pores. Optical measurements indicated that the tungsten oxide energy gap was 3.2 eV at a laser fluence of 51 J/cm<sup>2</sup> and rose to 3.55 eV as the laser fluence increased to 71 J/cm<sup>2</sup>. Zeta potential studies indicated that the nanoparticles formed at 61 J/cm<sup>2</sup> were stable. The optoelectronic properties of WO<sub>3</sub> nanoparticle-embedded PSi/c-Si heterojunction photodetectors fabricated at different laser fluences were also investigated. A responsivity of 1.35 A/W was attained at a wavelength of 450 nm when the device was fabricated using 61 J/cm<sup>2</sup> laser fluence. The WO<sub>3</sub>-embedded PSi gas sensor synthesized at a 61 J/cm<sup>2</sup> energy fluence exhibited the highest CO gas sensitivity, with a 63 % response at 20.2 ppm.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116971"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-22DOI: 10.1016/j.optmat.2025.116966
Ahmed R. Wassel , M.A.Abd El-Ghaffar , Ahmed M. El-Mahalawy
A novel copper biphthalocyanine (CuPc2) compound was synthesized using a facile straightforward approach. Thermally deposited CuPc2 thin films are prepared under vacuum at room temperature. The crystal and molecular structures of the deposited films relative to powder have been investigated using XRD and FTIR spectroscopy, respectively. The nanostructured CuPc2 films, as visualized microscopically via FE-SEM, possess uniform surface morphology and low roughness. The optical properties of the deposited films are evaluated spectrophotometrically in the UV–vis–NIR region. The conventional Q and B-bands were identified with onset and fundamental energy gap of about 1.61, and 2.85 eV, respectively, and confirmed the α-molecular phase with small Urbach energy ∼43.5 meV. The dispersion characteristics were analyzed using the single oscillator and Sellmeier models. The optical dielectric, energy loss, and optical conductivity are deducted and interpreted. The nonlinear optical susceptibility, refractive index, and absorption coefficient were extracted and compared to many other metallophthalocyanines films. The present films exhibit exhibits abnormal PL emission spectrum along the visible region with white point CIE coordinates. Furthermore, the measured current-voltage relation of the designed Au/CuPc2/p-Si/Al heterojunction is analyzed in detail. The ideality factor, reverse current, barrier height, series resistance shunt resistance, and interface state density are deduced. The photodetection features of the designed heterojunction are evaluated under different intensities (20–100) mW/cm2. Fast and efficient responsive performance with high linearity is achieved by the present heterojunction; besides it offers the validity of usage under very low power consumptions (−0.05 V).
{"title":"Insights into optical and photoelectrical properties of copper biphthalocyanine for efficient optoelectronic applications","authors":"Ahmed R. Wassel , M.A.Abd El-Ghaffar , Ahmed M. El-Mahalawy","doi":"10.1016/j.optmat.2025.116966","DOIUrl":"10.1016/j.optmat.2025.116966","url":null,"abstract":"<div><div>A novel copper biphthalocyanine (CuPc<sub>2</sub>) compound was synthesized using a facile straightforward approach. Thermally deposited CuPc<sub>2</sub> thin films are prepared under vacuum at room temperature. The crystal and molecular structures of the deposited films relative to powder have been investigated using XRD and FTIR spectroscopy, respectively. The nanostructured CuPc<sub>2</sub> films, as visualized microscopically via FE-SEM, possess uniform surface morphology and low roughness. The optical properties of the deposited films are evaluated spectrophotometrically in the UV–vis–NIR region. The conventional Q and B-bands were identified with onset and fundamental energy gap of about 1.61, and 2.85 eV, respectively, and confirmed the α-molecular phase with small Urbach energy ∼43.5 meV. The dispersion characteristics were analyzed using the single oscillator and Sellmeier models. The optical dielectric, energy loss, and optical conductivity are deducted and interpreted. The nonlinear optical susceptibility, refractive index, and absorption coefficient were extracted and compared to many other metallophthalocyanines films. The present films exhibit exhibits abnormal PL emission spectrum along the visible region with white point CIE coordinates. Furthermore, the measured current-voltage relation of the designed Au/CuPc<sub>2</sub>/p-Si/Al heterojunction is analyzed in detail. The ideality factor, reverse current, barrier height, series resistance shunt resistance, and interface state density are deduced. The photodetection features of the designed heterojunction are evaluated under different intensities (20–100) mW/cm<sup>2</sup>. Fast and efficient responsive performance with high linearity is achieved by the present heterojunction; besides it offers the validity of usage under very low power consumptions (−0.05 V).</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116966"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143706109","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-22DOI: 10.1016/j.optmat.2025.116972
S. Drissi , A. El Kissani , A. Abali , D. Elhaj , S. Elmassi , H. Badr , H. Dahabi , M. Tair , L. Nkhaili , K. El Assali , A. Outzourhit
This research aims to develop copper iron tin sulfide using two distinct chemical methods, sol-gel and electrodeposition. A comparative analysis is performed to evaluate and contrast the results obtained from each method. The X-ray Diffraction results indicate that all films exhibit a preferential orientation along the (112) plane, approving the presence of the tetragonal stannite phase with space group I-42m for both fabrication techniques. Raman Spectroscopy confirms the phase identified by X-ray Diffraction. Scanning Electron Microscopy showed a uniformed and dense surface. Energy Dispersive Spectroscopy confirmed the presence of all elements present in the structure. The optical analysis for both fabrication methods confirms that the thin films exhibit absorption coefficients greater than 104 cm−1 and band gap energies of 1.43 eV and 1.5 eV for the electrodeposition and sol-gel techniques respectively, which are indicative of good light absorption characteristics. Hall Effect measurements revealed a p-type conductivity in CFTS thin films prepared by the sol-gel method, with a carrier concentration of 3.85 1016, an electrical mobility of 1.42 10−2 cm2/V.s, and a sheet resistivity of 3.31 Ω cm. The simulation of the efficiency of solar cells based on CFTS absorbers prepared by both methods was performed using the SCAPS-1D simulator, and theoretical J-V characteristics were generated. Overall, this research establishes the effectiveness of this thin films as viable absorbers in solar cells.
{"title":"A comparative study of sol-gel and electrodeposition methods used in the synthesis of Cu2FeSnS4 thin films","authors":"S. Drissi , A. El Kissani , A. Abali , D. Elhaj , S. Elmassi , H. Badr , H. Dahabi , M. Tair , L. Nkhaili , K. El Assali , A. Outzourhit","doi":"10.1016/j.optmat.2025.116972","DOIUrl":"10.1016/j.optmat.2025.116972","url":null,"abstract":"<div><div>This research aims to develop copper iron tin sulfide using two distinct chemical methods, sol-gel and electrodeposition. A comparative analysis is performed to evaluate and contrast the results obtained from each method. The X-ray Diffraction results indicate that all films exhibit a preferential orientation along the (112) plane, approving the presence of the tetragonal stannite phase with space group I-42m for both fabrication techniques. Raman Spectroscopy confirms the phase identified by X-ray Diffraction. Scanning Electron Microscopy showed a uniformed and dense surface. Energy Dispersive Spectroscopy confirmed the presence of all elements present in the structure. The optical analysis for both fabrication methods confirms that the thin films exhibit absorption coefficients greater than 10<sup>4</sup> cm<sup>−1</sup> and band gap energies of 1.43 eV and 1.5 eV for the electrodeposition and sol-gel techniques respectively, which are indicative of good light absorption characteristics. Hall Effect measurements revealed a p-type conductivity in CFTS thin films prepared by the sol-gel method, with a carrier concentration of 3.85 10<sup>16</sup>, an electrical mobility of 1.42 10<sup>−2</sup> cm<sup>2</sup>/V.s, and a sheet resistivity of 3.31 Ω cm. The simulation of the efficiency of solar cells based on CFTS absorbers prepared by both methods was performed using the SCAPS-1D simulator, and theoretical J-V characteristics were generated. Overall, this research establishes the effectiveness of this thin films as viable absorbers in solar cells.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116972"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143680678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The near-infrared (NIR) luminescence of lanthanide ions shows important application potential in biological imaging owing to its good tissue penetration ability and less biological tissue photodamage in comparison to visible luminescence. However, at present, the luminescence intensity of lanthanide-doped NIR luminescent materials is generally low, which greatly restricts their development in bioimaging application. In this work, NIR-emitted ZrO2:Yb3+/Tm3+ sample was synthesized by urea-assisted co-precipitation method. The crystal phase evolution process and luminescence properties of ZrO2:Yb3+/Tm3+ sample were precisely controlled by lanthanide ions doping. A 2.3-fold enhancement of the upconversion emission was recorded for the ZrO2:Yb3+/Tm3+ sample as the temperature was increased from 25 °C to 225 °C because of the phonon-assisted electron population processes at specific energy levels. Our research results may inspire new ideas for developing thermally enhanced lanthanide-doped upconversion materials with high emission intensities.
{"title":"Phase evolution and thermally enhanced Red-NIR upconversion luminescence in ZrO2:Yb3+/Tm3+","authors":"Rui Zhu, Tingting Li, Jiahui Ren, Mengzhen Jia, Puyan Hao, Mandong Zhai, Hongyan Gao, Xiaoqi Zhao","doi":"10.1016/j.optmat.2025.116967","DOIUrl":"10.1016/j.optmat.2025.116967","url":null,"abstract":"<div><div>The near-infrared (NIR) luminescence of lanthanide ions shows important application potential in biological imaging owing to its good tissue penetration ability and less biological tissue photodamage in comparison to visible luminescence. However, at present, the luminescence intensity of lanthanide-doped NIR luminescent materials is generally low, which greatly restricts their development in bioimaging application. In this work, NIR-emitted ZrO<sub>2</sub>:Yb<sup>3+</sup>/Tm<sup>3+</sup> sample was synthesized by urea-assisted co-precipitation method. The crystal phase evolution process and luminescence properties of ZrO<sub>2</sub>:Yb<sup>3+</sup>/Tm<sup>3+</sup> sample were precisely controlled by lanthanide ions doping. A 2.3-fold enhancement of the upconversion emission was recorded for the ZrO<sub>2</sub>:Yb<sup>3+</sup>/Tm<sup>3+</sup> sample as the temperature was increased from 25 °C to 225 °C because of the phonon-assisted electron population processes at specific energy levels. Our research results may inspire new ideas for developing thermally enhanced lanthanide-doped upconversion materials with high emission intensities.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116967"},"PeriodicalIF":3.8,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143685191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-21DOI: 10.1016/j.optmat.2025.116960
M. Gabás , E. Blanco , I. Lombardero , P.F. Palacios , I. García , N. Miyashita , Y. Okada , M. Domínguez , C. Algora
In this work, 1 eV GaInNAsSb layers with different thickness have been annealed to study the impact that the thermal treatments have on their optical properties. For such purpose, GaInNAsSb layers with thicknesses of 0.2, 1 and 3 μm were grown lattice-matched onto GaAs substrates. Each epiwafer was cut into four quarters: one quarter was left as the as-grown sample, another one was submitted to a Rapid Thermal Annealing, the third quarter was annealed in a Metal Organic Vapor Phase Epitaxy reactor, and the fourth one was submitted to the first annealing followed by the second one. The complex index of refraction of the samples has been determined using spectroscopic ellipsometry along a wide spectral range (250–2500 nm). The optical properties of the 1 and 3 μm as grown layers do not differ very much between them, while the 0.2 μm layer exhibits a particular behavior that can be correlated with similarities/differences in the dilute nitride layer composition. The two types of thermal annealing affect in a different way to both composition and optical properties of the GaInNAsSb layers depending on their thicknesses. Finally, the obtained refractive indices and extinction coefficients have been validated by simulating the experimental reflectance of the semiconductor structures. Therefore, the determination of the optical properties (ranging from 250 to 2500 nm) of 1 eV GaInNAsSb we present here, allows the simulation and optimization of optoelectronic devices incorporating this dilute nitride.
{"title":"Complex index of refraction of MBE grown 1 eV GaInAsNSb dilute nitride layers as a function of thermal annealing","authors":"M. Gabás , E. Blanco , I. Lombardero , P.F. Palacios , I. García , N. Miyashita , Y. Okada , M. Domínguez , C. Algora","doi":"10.1016/j.optmat.2025.116960","DOIUrl":"10.1016/j.optmat.2025.116960","url":null,"abstract":"<div><div>In this work, 1 eV GaInNAsSb layers with different thickness have been annealed to study the impact that the thermal treatments have on their optical properties. For such purpose, GaInNAsSb layers with thicknesses of 0.2, 1 and 3 μm were grown lattice-matched onto GaAs substrates. Each epiwafer was cut into four quarters: one quarter was left as the as-grown sample, another one was submitted to a Rapid Thermal Annealing, the third quarter was annealed in a Metal Organic Vapor Phase Epitaxy reactor, and the fourth one was submitted to the first annealing followed by the second one. The complex index of refraction of the samples has been determined using spectroscopic ellipsometry along a wide spectral range (250–2500 nm). The optical properties of the 1 and 3 μm as grown layers do not differ very much between them, while the 0.2 μm layer exhibits a particular behavior that can be correlated with similarities/differences in the dilute nitride layer composition. The two types of thermal annealing affect in a different way to both composition and optical properties of the GaInNAsSb layers depending on their thicknesses. Finally, the obtained refractive indices and extinction coefficients have been validated by simulating the experimental reflectance of the semiconductor structures. Therefore, the determination of the optical properties (ranging from 250 to 2500 nm) of 1 eV GaInNAsSb we present here, allows the simulation and optimization of optoelectronic devices incorporating this dilute nitride.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116960"},"PeriodicalIF":3.8,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143697190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study investigates the photoluminescence properties of heavy metal oxide glasses composed of B2O3, Bi2O3, Gd2O3, K2O, and Li2O, doped with Ytterbium (Yb3+) and Erbium (Er3+) ions, referred to as BBGKLEr3+/Yb3+. These glasses were made by melt-quenching procedure with varying concentrations of the Yb3+ dopant to assess their luminescence characteristics. Highpersensitive band in the visible spectrum was appeared at 521 nm for the transition (2H, 4G)11/2 for Er3+ ions in BBGKLEr3+/Yb3+ glasses. A 980 nm diode laser was employed to excite the Er3+/Yb3+ ions, facilitating the investigation of up-conversion (UC) and down-conversion processes. The BBGKLEr3+/Yb3+ glasses exhibited significant UC emission alongside a strong emission band at 1530 nm. Notably, the gain cross-section for BBGKLglasses doped with 0.5 mol% Er3+ and 5 mol% Yb3+ ions increased to 2.39 × 10−21 cm2, as determined by Mc Cumber theory. With an estimated lifetime of 0.885 ± 0.05 ms, the 1530 nm near infra-red emission demonstrated remarkable efficiency in promoting rare earth ion emission, further enhanced by the extended lifetime of the BBGKLEr3+/Yb3+ glasses. Spectroscopic analyses, including emission spectra, emission decay profiles, and gain cross-sections, suggest that BBGKLEr3+/Yb3+ glasses hold promise for use in C-band amplifiers or as laser gain media.
{"title":"Optimizing energy transfer in Er3+/Yb3+ Co-doped heavy metal oxide bismuth borate glasses for C-band optical amplifiers","authors":"Prasanth Musalikunta , Ravi Nirlakalla , Ravanamma Rallapalli , Neelima Gaddam , Venkata Krishnaiah Kummara , Aboud Ahmed Awadh Bahajjaj , Nanda Kumar Reddy Nallabala , Upendra Kumar Kagola","doi":"10.1016/j.optmat.2025.116939","DOIUrl":"10.1016/j.optmat.2025.116939","url":null,"abstract":"<div><div>This study investigates the photoluminescence properties of heavy metal oxide glasses composed of B<sub>2</sub>O<sub>3</sub>, Bi<sub>2</sub>O<sub>3</sub>, Gd<sub>2</sub>O<sub>3</sub>, K<sub>2</sub>O, and Li<sub>2</sub>O, doped with Ytterbium (Yb<sup>3+</sup>) and Erbium (Er<sup>3+</sup>) ions, referred to as BBGKLEr<sup>3+</sup>/Yb<sup>3+</sup>. These glasses were made by melt-quenching procedure with varying concentrations of the Yb<sup>3+</sup> dopant to assess their luminescence characteristics. Highpersensitive band in the visible spectrum was appeared at 521 nm for the transition (<sup>2</sup>H, <sup>4</sup>G)<sub>11/2</sub> for Er<sup>3+</sup> ions in BBGKLEr<sup>3+</sup>/Yb<sup>3+</sup> glasses. A 980 nm diode laser was employed to excite the Er<sup>3+</sup>/Yb<sup>3+</sup> ions, facilitating the investigation of up-conversion (UC) and down-conversion processes. The BBGKLEr<sup>3+</sup>/Yb<sup>3+</sup> glasses exhibited significant UC emission alongside a strong emission band at 1530 nm. Notably, the gain cross-section for BBGKLglasses doped with 0.5 mol% Er<sup>3+</sup> and 5 mol% Yb<sup>3+</sup> ions increased to 2.39 × 10<sup>−21</sup> cm<sup>2</sup>, as determined by Mc Cumber theory. With an estimated lifetime of 0.885 ± 0.05 ms, the 1530 nm near infra-red emission demonstrated remarkable efficiency in promoting rare earth ion emission, further enhanced by the extended lifetime of the BBGKLEr<sup>3+</sup>/Yb<sup>3+</sup> glasses. Spectroscopic analyses, including emission spectra, emission decay profiles, and gain cross-sections, suggest that BBGKLEr<sup>3+</sup>/Yb<sup>3+</sup> glasses hold promise for use in C-band amplifiers or as laser gain media.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"163 ","pages":"Article 116939"},"PeriodicalIF":3.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143697738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-20DOI: 10.1016/j.optmat.2025.116962
Jiahao Li , Yunqi Peng , Yuanan Zhao , Xiangyu Zhu , Ligong Ke , Jiaoling Zhao , Ge Zhang , Tao Wang , Zhilin Xia , Zhangfan Wei , Xiaoran Li , Jianda Shao
Mo/Si multilayers are commonly used as extreme ultraviolet (EUV) reflection coatings owing to their high reflectivity at EUV wavelengths. This study utilized Shanghai Soft X-ray Free-Electron Laser (SXFEL) to generate 13.5 nm, ∼300 fs pulse lasers, and the laser damage behaviors of Mo/Si multilayers were investigated. The designed Mo/Si multilayer achieved high reflectivity at an incident angle of 20°. After exposing the surface to an average of 20 laser pulses per point at normal incidence, bubble-like damage was observed. Monte Carlo method was employed to obtain the energy absorption distribution of Mo/Si multilayers under EUV laser radiation. It was confirmed that the cause of EUV laser damage to Mo/Si multilayers was the enhancement of energy absorption, leading to the melting of the layers. High-energy absorption occurred at a place close to the substrate induced by the oxidation of Si and on the top of the multilayers, which resulted in multilayers detaching from the substrate and forming bubble-like morphology. This intensified interlayer diffusion and altered crystal orientation, resulting in irreversible damage to the multilayers.
{"title":"Oxidation of silicon on substrate induced bubble-like damage of Mo/Si mirror irradiated by femtosecond EUV pulses","authors":"Jiahao Li , Yunqi Peng , Yuanan Zhao , Xiangyu Zhu , Ligong Ke , Jiaoling Zhao , Ge Zhang , Tao Wang , Zhilin Xia , Zhangfan Wei , Xiaoran Li , Jianda Shao","doi":"10.1016/j.optmat.2025.116962","DOIUrl":"10.1016/j.optmat.2025.116962","url":null,"abstract":"<div><div>Mo/Si multilayers are commonly used as extreme ultraviolet (EUV) reflection coatings owing to their high reflectivity at EUV wavelengths. This study utilized Shanghai Soft X-ray Free-Electron Laser (SXFEL) to generate 13.5 nm, ∼300 fs pulse lasers, and the laser damage behaviors of Mo/Si multilayers were investigated. The designed Mo/Si multilayer achieved high reflectivity at an incident angle of 20°. After exposing the surface to an average of 20 laser pulses per point at normal incidence, bubble-like damage was observed. Monte Carlo method was employed to obtain the energy absorption distribution of Mo/Si multilayers under EUV laser radiation. It was confirmed that the cause of EUV laser damage to Mo/Si multilayers was the enhancement of energy absorption, leading to the melting of the layers. High-energy absorption occurred at a place close to the substrate induced by the oxidation of Si and on the top of the multilayers, which resulted in multilayers detaching from the substrate and forming bubble-like morphology. This intensified interlayer diffusion and altered crystal orientation, resulting in irreversible damage to the multilayers.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116962"},"PeriodicalIF":3.8,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143685369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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