Pub Date : 2025-03-17DOI: 10.1016/j.optmat.2025.116921
I. Fuks-Janczarek , R. Miedzinski , Luciana R.P. Kassab
This paper presents a detailed analysis of the linear and nonlinear optical properties of PbO–GeO–SiO2 glasses doped with the rare earth elements (RE) Yb and Tm with varying Si concentration. Various physical parameters have been described through systematic experimentation and analysis. Among the parameters studied are Urbach energy, energy gap, third-order nonlinear susceptibility and Judd–Ofelt parameters. This research was carried out to gain a better understanding of the effect of RE doping and silicon concentration on the optical properties of these glasses, with the aim of exploring their potential applications in photonics and optoelectronics. The results showed that RE doping and variation of silicon concentration significantly affect the optical properties of the glasses.
{"title":"Exploring linear and nonlinear optical properties in Yb3+ and Tm3+ doped PbO–GeO2–SiO2 glasses","authors":"I. Fuks-Janczarek , R. Miedzinski , Luciana R.P. Kassab","doi":"10.1016/j.optmat.2025.116921","DOIUrl":"10.1016/j.optmat.2025.116921","url":null,"abstract":"<div><div>This paper presents a detailed analysis of the linear and nonlinear optical properties of PbO–GeO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>–SiO<sub>2</sub> glasses doped with the rare earth elements (RE) Yb<span><math><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span> and Tm<span><math><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span> with varying Si concentration. Various physical parameters have been described through systematic experimentation and analysis. Among the parameters studied are Urbach energy, energy gap, third-order nonlinear susceptibility and Judd–Ofelt parameters. This research was carried out to gain a better understanding of the effect of RE doping and silicon concentration on the optical properties of these glasses, with the aim of exploring their potential applications in photonics and optoelectronics. The results showed that RE doping and variation of silicon concentration significantly affect the optical properties of the glasses.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116921"},"PeriodicalIF":3.8,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143642832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-15DOI: 10.1016/j.optmat.2025.116948
Jingyan Yu, Rajendran Kalimuthu, Xingchen Liu, Wengao Zhang, Yonggen Tan, Kun Yan, Shenglin Ye, Jun Feng
Carbon quantum dots (CQDs) hold great potential as fluorescence probes due to their tunable optical properties, but remain challenges in tailoring surface functionalization for selective metal ion detection, which is essential for environmental monitoring and water quality analysis. This work, synthesized nitrogen and sulfur co-doped carbon quantum dots (N, S-CQDs) were via a one-pot solvothermal method with two different solvents, N, N-dimethylformamide (DMF) and acetone. The influences of solvent selectivity on the surface functionality of CQDs and their fluorescence quenching mechanisms were evaluated in both experimental and computational methods. To represent CQDs surfaces, density functional theory (DFT) calculations of the total density of states (TDOS) and partial density of states (PDOS) were conducted. Our findings revealed that synthesized CQDs in DMF and acetone exhibited fluorescence quenching as static and dynamic. We have achieved the highest quantum yields of 37.85 % and 28.59 %. This shows excellent sensitivities of Fe3+ at 0.82 μM and 1.19 μM for Co2+. Furthermore, the study extended to validated in real water sample analysis. This approach enabled the development of a novel strategy for the selective and sensitive detection of Fe3+ and Co2+ ions.
{"title":"Unveiling the quenching mechanism of metal ions using solvent-driven N, S-doped carbon quantum dots","authors":"Jingyan Yu, Rajendran Kalimuthu, Xingchen Liu, Wengao Zhang, Yonggen Tan, Kun Yan, Shenglin Ye, Jun Feng","doi":"10.1016/j.optmat.2025.116948","DOIUrl":"10.1016/j.optmat.2025.116948","url":null,"abstract":"<div><div>Carbon quantum dots (CQDs) hold great potential as fluorescence probes due to their tunable optical properties, but remain challenges in tailoring surface functionalization for selective metal ion detection, which is essential for environmental monitoring and water quality analysis. This work, synthesized nitrogen and sulfur co-doped carbon quantum dots (N, S-CQDs) were via a one-pot solvothermal method with two different solvents, N, N-dimethylformamide (DMF) and acetone. The influences of solvent selectivity on the surface functionality of CQDs and their fluorescence quenching mechanisms were evaluated in both experimental and computational methods. To represent CQDs surfaces, density functional theory (DFT) calculations of the total density of states (TDOS) and partial density of states (PDOS) were conducted. Our findings revealed that synthesized CQDs in DMF and acetone exhibited fluorescence quenching as static and dynamic. We have achieved the highest quantum yields of 37.85 % and 28.59 %. This shows excellent sensitivities of Fe<sup>3+</sup> at 0.82 μM and 1.19 μM for Co<sup>2+</sup>. Furthermore, the study extended to validated in real water sample analysis. This approach enabled the development of a novel strategy for the selective and sensitive detection of Fe<sup>3+</sup> and Co<sup>2+</sup> ions.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116948"},"PeriodicalIF":3.8,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143642396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-14DOI: 10.1016/j.optmat.2025.116943
A.I. Espinoza-Duarte , A.L. Leal-Cruz , A. Vera-Marquina , R. Gómez-Fuentes , A. Garzón-Roman , C. Zúñiga-Islas
This work is focused on tailoring optoelectronic behavior and trapping effects in ZnO and ZnO:Mg 1D nanostructures intended for DSSC photoelectrodes. ZnO and ZnO:Mg deposits on FTO-glass substrates were obtained by the CBD method at a relatively low temperature (90 °C) and short processing time (2 h). In addition, magnesium was incorporated as a dopant and varied (1 and 2 at. %) to obtain ZnO:Mg deposits with different optoelectronic and morphological characteristics. SEM results revealed the morphological evolution of ZnO deposits, transitioning from nanotubes to nanorods as the Mg increases from 0 to 2 at. %. Raman and XPS spectroscopies confirmed the formation of ZnO Wurtzite structures, as well as the incorporation of Mg ions in the ZnO host lattice. On the other hand, UV–Vis DRS revealed a significant influence of Mg ion concentration on the reflectance and optical bandgap of ZnO deposits. PL results indicated that both ZnO and ZnO:Mg deposits are rich in defects and traps induced by Mg incorporation, enabling the tailoring of optoelectronic properties. Additionally, when Mg at. % increases, UV, blue, and infrared emissions are quenched, while yellow emissions are enhanced. Lastly, a comprehensive analysis of the characteristics and behavior of resulting materials indicates that ZnO:Mg with 1 at. % of Mg exhibits the best attributes for photoelectrode, such as increased surface area, enhanced crystalline quality, and reduced recombination rates and defects. Noteworthy is that resulting materials exhibit those crucial characteristics required for DSSC photoelectrodes applications, and they could be considered for flexible electronic applications.
{"title":"Tailoring of optoelectronic and trapping effects in ZnO and ZnO:Mg 1D structures for DSSC photoelectrodes","authors":"A.I. Espinoza-Duarte , A.L. Leal-Cruz , A. Vera-Marquina , R. Gómez-Fuentes , A. Garzón-Roman , C. Zúñiga-Islas","doi":"10.1016/j.optmat.2025.116943","DOIUrl":"10.1016/j.optmat.2025.116943","url":null,"abstract":"<div><div>This work is focused on tailoring optoelectronic behavior and trapping effects in ZnO and ZnO:Mg 1D nanostructures intended for DSSC photoelectrodes. ZnO and ZnO:Mg deposits on FTO-glass substrates were obtained by the CBD method at a relatively low temperature (90 °C) and short processing time (2 h). In addition, magnesium was incorporated as a dopant and varied (1 and 2 at. %) to obtain ZnO:Mg deposits with different optoelectronic and morphological characteristics. SEM results revealed the morphological evolution of ZnO deposits, transitioning from nanotubes to nanorods as the Mg increases from 0 to 2 at. %. Raman and XPS spectroscopies confirmed the formation of ZnO Wurtzite structures, as well as the incorporation of Mg ions in the ZnO host lattice. On the other hand, UV–Vis DRS revealed a significant influence of Mg ion concentration on the reflectance and optical bandgap of ZnO deposits. PL results indicated that both ZnO and ZnO:Mg deposits are rich in defects and traps induced by Mg incorporation, enabling the tailoring of optoelectronic properties. Additionally, when Mg at. % increases, UV, blue, and infrared emissions are quenched, while yellow emissions are enhanced. Lastly, a comprehensive analysis of the characteristics and behavior of resulting materials indicates that ZnO:Mg with 1 at. % of Mg exhibits the best attributes for photoelectrode, such as increased surface area, enhanced crystalline quality, and reduced recombination rates and defects. Noteworthy is that resulting materials exhibit those crucial characteristics required for DSSC photoelectrodes applications, and they could be considered for flexible electronic applications.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116943"},"PeriodicalIF":3.8,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143642838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-13DOI: 10.1016/j.optmat.2025.116935
Nguyen Thi Huyen , Luong Truc Quynh Ngan , Le Thi Quynh Xuan , Tran Ai Suong Suong , Cao Thi Thanh , Nguyen Van Tu , Pham Thanh Binh , Tran Van Tan , Nguyen Viet Tuyen , Dao Tran Cao , Pham Van Hai , Vu Xuan Hoa , Nguyen Van Chuc
In this study, an innovative nanocomposite of reduced graphene oxide-carbon nanotubes/porous silver dendrites (rGO-CNTs/pAgDs) was formed on silicon substrate using a straightforward plasma jet technique. This nanocomposite was employed as a surface-enhanced Raman scattering (SERS) substrate to detect hazardous pollutants, including rhodamine 6G (R6G) and pesticide residues like malathion (MAL). For R6G probe, the SERS substrate exhibited a good enhancement factor (EF) of 1.68 × 107 and a low detection limit (LOD) of 2.43 × 10−13 M. Moreover, this SERS substrate owned a good stability for the SERS intensity which was reduced only by 12.4 % after aging time for 21 days and the relative standard deviation (RSD) values were lower than 15 %, revealing an excellent uniformity and reproducibility. For MAL detection, this SERS substrate exhibited a low LOD of 1.72 × 10−10 M. This SERS substrate shows great potential for detecting and monitoring hazardous pollutants and pesticide residues.
{"title":"Reduced graphene oxide-carbon nanotubes nanocomposites-decorated porous silver nanodendrites for highly efficient SERS sensing","authors":"Nguyen Thi Huyen , Luong Truc Quynh Ngan , Le Thi Quynh Xuan , Tran Ai Suong Suong , Cao Thi Thanh , Nguyen Van Tu , Pham Thanh Binh , Tran Van Tan , Nguyen Viet Tuyen , Dao Tran Cao , Pham Van Hai , Vu Xuan Hoa , Nguyen Van Chuc","doi":"10.1016/j.optmat.2025.116935","DOIUrl":"10.1016/j.optmat.2025.116935","url":null,"abstract":"<div><div>In this study, an innovative nanocomposite of reduced graphene oxide-carbon nanotubes/porous silver dendrites (rGO-CNTs/pAgDs) was formed on silicon substrate using a straightforward plasma jet technique. This nanocomposite was employed as a surface-enhanced Raman scattering (SERS) substrate to detect hazardous pollutants, including rhodamine 6G (R6G) and pesticide residues like malathion (MAL). For R6G probe, the SERS substrate exhibited a good enhancement factor (EF) of 1.68 × 10<sup>7</sup> and a low detection limit (LOD) of 2.43 × 10<sup>−13</sup> M. Moreover, this SERS substrate owned a good stability for the SERS intensity which was reduced only by 12.4 % after aging time for 21 days and the relative standard deviation (RSD) values were lower than 15 %, revealing an excellent uniformity and reproducibility. For MAL detection, this SERS substrate exhibited a low LOD of 1.72 × 10<sup>−10</sup> M. This SERS substrate shows great potential for detecting and monitoring hazardous pollutants and pesticide residues.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116935"},"PeriodicalIF":3.8,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143642836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-13DOI: 10.1016/j.optmat.2025.116937
Latif U. Khan , Ruba I. AlZubi , Hassan K. Juwhari , Yazan A. Mousa , Zahid U. Khan , Santiago J.A. Figueroa , Philipp Hans
The synchrotron radiation hard X-ray photons exhibit several advantages, such as monochromaticity, energy tunability and a desired penetration depth. This allows to precisely probe the chemical environment of the Eu2+/Eu3+ dopants' sites in a host lattice by X-ray absorption fine structure (XAFS) and X-ray excited optical luminescence (XEOL). Thus, tuning the photon energy of monochromatic X-rays around the L-edges of Europium and combining XAFS with the XEOL data provided an ideal probe for determining the oxidation state, local coordination environment and optical behavior of the Eu2+/Eu3+ sites. XEOL spectra of the X-ray induced luminescent samples S1 (BaAl2O4:Eu-BaCO3) and S2 (BaAl2O4:Eu-BaCO3/Al(OH)3), measured under excitation of tunable Eu L3,2,1-edges X-ray energies (7150, 7710, and 8150 eV) manifested that Eu2+ occupies more than one Ba sites in BaAl2O4 lattice, with a probable contribution from the BaCO3. The Eu and Ba local site-specific L3-edges X-ray absorption near edge structure (XANES) spectra, Continuous Cauchy wavelet transform (CCWT) and quantitative analyses of the extended X-ray absorption fine structure (EXAFS) data, demonstrated a mixed occupancy of Eu/Ba at the cation sites in BaAl2O4 lattice, dominantly for the S1 phosphor. However minor contribution from Eu site in the BaCO3 cannot be neglected, as evidenced form the quantitative EXAFS fit of S1 phosphor. Quantitative phase analysis accomplished by Rietveld refinements of the experimental XRD patterns indicated the considerable enhancement in yield of BaAl2O4:Eu (S1) sample, irradiated with IR light, when compared to the S2. The emitting center's site specific XEOL spectroscopy in combination with XAFS validated the existence of europium predominantly in +3 oxidation state with minute Eu2+ impurity occupying multiple sites in the host lattice for the S1 and S2 phosphors.
{"title":"Advanced probing of Eu2+/Eu3+ photoemitter sites in BaAl2O4:Eu scintillators by synchrotron radiation X-ray excited optical luminescence probe","authors":"Latif U. Khan , Ruba I. AlZubi , Hassan K. Juwhari , Yazan A. Mousa , Zahid U. Khan , Santiago J.A. Figueroa , Philipp Hans","doi":"10.1016/j.optmat.2025.116937","DOIUrl":"10.1016/j.optmat.2025.116937","url":null,"abstract":"<div><div>The synchrotron radiation hard X-ray photons exhibit several advantages, such as monochromaticity, energy tunability and a desired penetration depth. This allows to precisely probe the chemical environment of the Eu<sup>2+</sup>/Eu<sup>3+</sup> dopants' sites in a host lattice by X-ray absorption fine structure (XAFS) and X-ray excited optical luminescence (XEOL). Thus, tuning the photon energy of monochromatic X-rays around the L-edges of Europium and combining XAFS with the XEOL data provided an ideal probe for determining the oxidation state, local coordination environment and optical behavior of the Eu<sup>2+</sup>/Eu<sup>3+</sup> sites. XEOL spectra of the X-ray induced luminescent samples S1 (BaAl<sub>2</sub>O<sub>4</sub>:Eu-BaCO<sub>3</sub>) and S2 (BaAl<sub>2</sub>O<sub>4</sub>:Eu-BaCO<sub>3</sub>/Al(OH)<sub>3</sub>), measured under excitation of tunable Eu L<sub>3,2,1</sub>-edges X-ray energies (7150, 7710, and 8150 eV) manifested that Eu<sup>2+</sup> occupies more than one Ba sites in BaAl<sub>2</sub>O<sub>4</sub> lattice, with a probable contribution from the BaCO<sub>3</sub>. The Eu and Ba local site-specific L<sub>3</sub>-edges X-ray absorption near edge structure (XANES) spectra, Continuous Cauchy wavelet transform (CCWT) and quantitative analyses of the extended X-ray absorption fine structure (EXAFS) data, demonstrated a mixed occupancy of Eu/Ba at the cation sites in BaAl<sub>2</sub>O<sub>4</sub> lattice, dominantly for the S1 phosphor. However minor contribution from Eu site in the BaCO<sub>3</sub> cannot be neglected, as evidenced form the quantitative EXAFS fit of S1 phosphor. Quantitative phase analysis accomplished by Rietveld refinements of the experimental XRD patterns indicated the considerable enhancement in yield of BaAl<sub>2</sub>O<sub>4</sub>:Eu (S1) sample, irradiated with IR light, when compared to the S2. The emitting center's site specific XEOL spectroscopy in combination with XAFS validated the existence of europium predominantly in +3 oxidation state with minute Eu<sup>2+</sup> impurity occupying multiple sites in the host lattice for the S1 and S2 phosphors.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116937"},"PeriodicalIF":3.8,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143628906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-13DOI: 10.1016/j.optmat.2025.116936
Thomas Dippong , Iosif Grigore Deac , Ioan Petean , Erika Andrea Levei , Oana Cadar
The influence of Cd2+ content and heat treatment on the morphology, structure and magnetic behavior of CdxZn1-xFe2O4 (x = 0.0; 0.2; 0.4; 0.6; 0.8; 1.0) nanoparticles encapsulated in SiO2 produced by the sol-gel route was studied. At 800 °C, Fe2SiO4, Fe2O3 and CdO accompanied the poorly crystallized ferrites, while at 1200 °C the well crystallized ferrite was convoyed by Zn2SiO4 and SiO2. Encapsulation of nano-sized CdxZn1-xFe2O4 in inert SiO2 allowed the particle size control, minimized agglomeration, and improved the magnetic behavior. The low heat treatment temperature produced well-individualized nanoparticles of ∼40 nm, with the particle diameter being larger than the ferrite crystallites due to the SiO2 coating. Increasing the Cd2+ content resulted in small particle size, whereas increasing the heat treatment temperature led to larger particle size, resulting in submicron clusters. The increase of Cd2+ content and heat treatment temperature also determined the increase in lattice constant, density and hopping length and the decrease in crystallite size and porosity. The nanoparticles were found to be mesoporous with a narrow pore size distribution. The magnetic features increased with heat treatment temperature and decreased with increasing Cd2+ content until paramagnetic-like behavior was reached for CdFe2O4.
{"title":"Evolution of morphology, structure and magnetic behavior of CdxZn1-xFe2O4@SiO2 nanocomposites with Cd2+ content and heat treatment","authors":"Thomas Dippong , Iosif Grigore Deac , Ioan Petean , Erika Andrea Levei , Oana Cadar","doi":"10.1016/j.optmat.2025.116936","DOIUrl":"10.1016/j.optmat.2025.116936","url":null,"abstract":"<div><div>The influence of Cd<sup>2+</sup> content and heat treatment on the morphology, structure and magnetic behavior of Cd<sub>x</sub>Zn<sub>1-x</sub>Fe<sub>2</sub>O<sub>4</sub> (x = 0.0; 0.2; 0.4; 0.6; 0.8; 1.0) nanoparticles encapsulated in SiO<sub>2</sub> produced by the sol-gel route was studied. At 800 °C, Fe<sub>2</sub>SiO<sub>4</sub>, Fe<sub>2</sub>O<sub>3</sub> and CdO accompanied the poorly crystallized ferrites, while at 1200 °C the well crystallized ferrite was convoyed by Zn<sub>2</sub>SiO<sub>4</sub> and SiO<sub>2</sub>. Encapsulation of nano-sized Cd<sub>x</sub>Zn<sub>1-x</sub>Fe<sub>2</sub>O<sub>4</sub> in inert SiO<sub>2</sub> allowed the particle size control, minimized agglomeration, and improved the magnetic behavior. The low heat treatment temperature produced well-individualized nanoparticles of ∼40 nm, with the particle diameter being larger than the ferrite crystallites due to the SiO<sub>2</sub> coating. Increasing the Cd<sup>2+</sup> content resulted in small particle size, whereas increasing the heat treatment temperature led to larger particle size, resulting in submicron clusters. The increase of Cd<sup>2+</sup> content and heat treatment temperature also determined the increase in lattice constant, density and hopping length and the decrease in crystallite size and porosity. The nanoparticles were found to be mesoporous with a narrow pore size distribution. The magnetic features increased with heat treatment temperature and decreased with increasing Cd<sup>2+</sup> content until paramagnetic-like behavior was reached for CdFe<sub>2</sub>O<sub>4</sub>.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116936"},"PeriodicalIF":3.8,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143642837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-13DOI: 10.1016/j.optmat.2025.116934
Nor Syafiqah Azmi , Muhammad Shahrul Nizam Suri , Noratiqah Yusop , Mohd Ann Amirul Zulffiqal Md Sahar , Mohd Anas Ahmad , Muhamad Ikram Md Taib , Mohd Nazri Abd Rahman , Muhammad Iznul Hisyam , Tan Swee Tiam , Ahmad Fakhrurrazi Ahmad Noorden , Mohammad Amirul Hairol Aman , Norzaini Zainal
We propose a novel symmetric InGaN staggered quantum well (SQW) design for the growth of an InGaN/GaN UVA LED heterostructure, aiming at improving carriers’ confinement in the multi-quantum well (MQW) active region of the LED, especially at higher currents. In comparison to conventional methods, the SQW was inserted only in the last two QWs to shorten the overall growth time. Additionally, indium-surfactant was introduced during the growth of GaN buffer layer (In-surfactant GaN buffer layer) as an effort to improve the MQW growth further. With respect to the reference LED, i.e. without the SQW and the In-surfactant GaN buffer layer, the crystalline and surface properties improve for the LED with both SQW and In-surfactant GaN buffer layer. Moreover, the forward voltage can be as low as 3.23 V and the output power reaches approximately 25 mW at 100 mA with the SQW and In-surfactant GaN buffer layer.
{"title":"Novel staggered quantum well design and in-surfactant GaN buffer layer in UVA light emitting diode heterostructures","authors":"Nor Syafiqah Azmi , Muhammad Shahrul Nizam Suri , Noratiqah Yusop , Mohd Ann Amirul Zulffiqal Md Sahar , Mohd Anas Ahmad , Muhamad Ikram Md Taib , Mohd Nazri Abd Rahman , Muhammad Iznul Hisyam , Tan Swee Tiam , Ahmad Fakhrurrazi Ahmad Noorden , Mohammad Amirul Hairol Aman , Norzaini Zainal","doi":"10.1016/j.optmat.2025.116934","DOIUrl":"10.1016/j.optmat.2025.116934","url":null,"abstract":"<div><div>We propose a novel symmetric InGaN staggered quantum well (SQW) design for the growth of an InGaN/GaN UVA LED heterostructure, aiming at improving carriers’ confinement in the multi-quantum well (MQW) active region of the LED, especially at higher currents. In comparison to conventional methods, the SQW was inserted only in the last two QWs to shorten the overall growth time. Additionally, indium-surfactant was introduced during the growth of GaN buffer layer (In-surfactant GaN buffer layer) as an effort to improve the MQW growth further. With respect to the reference LED, i.e. without the SQW and the In-surfactant GaN buffer layer, the crystalline and surface properties improve for the LED with both SQW and In-surfactant GaN buffer layer. Moreover, the forward voltage can be as low as 3.23 V and the output power reaches approximately 25 mW at 100 mA with the SQW and In-surfactant GaN buffer layer.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116934"},"PeriodicalIF":3.8,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143628907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The investigation of fluorescent polymers doped with various rare earth ions, particularly when sensitized by ultraviolet and visible radiation, is vital for improving the efficiency of photonic devices. In the present work, steady-state and time-domain photoluminescence measurements of fluorescent polyvinyl alcohol (PVA) films doped with Tb3+ and Al3+ ions were carried out to understand how the co-doping of Al3+ ions affects the optical properties of Tb3+ ions doped in the polymer matrix. A decrease in the intensity of the PVA fluorescence (450 nm) and phosphorescence (470 nm) emission bands, along with a corresponding reduction in decay times in the presence of Tb3+ ions, indicating energy transfer from PVA to Tb3+ with an efficiency of 41 %. With Al3+ ions, co-doping the PL intensity of the PVA fluorescence band increased, while the 5D4 → 7F6,5,4 transition of the Tb3+ ion decreased, along with a reduction in decay time. These findings suggest that the presence of Al3+ ions reduces energy transfer by decreasing cross-relaxation processes and increasing the diversity of Tb3+ ion sites. This preliminary study highlights the potential for developing brighter, cost-effective optical materials with high photon flux control.
{"title":"Effect of Al3+ ions on excitation energy transfer from fluorescent polyvinyl alcohol to Tb3+ ions","authors":"Ranjan Kumar , Sumit Modanwal , Richa Tripathi , A.L. Fanai , Hirdyesh Mishra","doi":"10.1016/j.optmat.2025.116933","DOIUrl":"10.1016/j.optmat.2025.116933","url":null,"abstract":"<div><div>The investigation of fluorescent polymers doped with various rare earth ions, particularly when sensitized by ultraviolet and visible radiation, is vital for improving the efficiency of photonic devices. In the present work, steady-state and time-domain photoluminescence measurements of fluorescent polyvinyl alcohol (PVA) films doped with Tb<sup>3+</sup> and Al<sup>3+</sup> ions were carried out to understand how the co-doping of Al<sup>3+</sup> ions affects the optical properties of Tb<sup>3+</sup> ions doped in the polymer matrix. A decrease in the intensity of the PVA fluorescence (450 nm) and phosphorescence (470 nm) emission bands, along with a corresponding reduction in decay times in the presence of Tb<sup>3+</sup> ions, indicating energy transfer from PVA to Tb<sup>3+</sup> with an efficiency of 41 %. With Al<sup>3+</sup> ions, co-doping the PL intensity of the PVA fluorescence band increased, while the <sup>5</sup>D<sub>4</sub> → <sup>7</sup>F<sub>6</sub>,<sub>5,4</sub> transition of the Tb<sup>3+</sup> ion decreased, along with a reduction in decay time. These findings suggest that the presence of Al<sup>3+</sup> ions reduces energy transfer by decreasing cross-relaxation processes and increasing the diversity of Tb<sup>3+</sup> ion sites. This preliminary study highlights the potential for developing brighter, cost-effective optical materials with high photon flux control.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116933"},"PeriodicalIF":3.8,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143642839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-12DOI: 10.1016/j.optmat.2025.116932
Zheyu Li , Daoyou Li , Yifan Bao , Pengzhi Guo , Zezhou Liang , Chunyan Yang , Junfeng Tong
Acceptor-acceptor (A-A) type perylenediimide (PDI)-based polymeric acceptors (PAs) possessed a high air stability and an excellent charge mobility. However, few efforts devoted to A-A type PDI-based polymeric acceptors and the interplay between the structure and photovoltaic performance was still nebulous. Herein, three A-A type PDI-based PAs PPDI-DT-DTBT, PPDI-DT-DTFBT and PPDI-DT-DTFFBT with large flexible 2-decyltetradecyl (DT) side chains were developed to probe into the effect of different fluorination at the benzothiadiazole (BT) moiety. And the donor-acceptor (D-A) type polymer acceptor PPDI-DT-2T without BT unit was prepared to make the comparison. All of them exhibited the high thermo-stability and solution state photo-stability. Gradually increased fluorine substituents acquired the blue-shifted absorption, the increased bandgap, the raised ELUMO, more planar molecular configuration and strengthened aggregation. Accordingly, with the widely developed donor polymer PTB7-Th as electron donor, bulk heterojunction device based on monfluorinated PPDI-DT-DTFBT obtained the middle VOC of 0.70 V, the highest JSC of 6.22 mA cm−2 and FF of 37.56 %, contributing to the winning power conversion efficiency (PCE) of 1.63 %. By contrast, fluorine-free PPDI-DT-DTBT- and difluorinated PPDI-DT-DTFFBT-based devices acquired the inferior PCEs of 1.31 % and 1.24 %. The control polymer accepter PPDI-DT-2T got the PCE of 1.27 % regardless of the high VOC of 0.80 V as the result of high ELUMO. The raised PCE after monofluorination was mainly originated from the increased JSC and FF, which was due to the improved absorption and the higher electron mobility. The observed low efficiency in these DT-side chain modified PDI polymeric acceptors was probably due to the large aggregation and the coarse surface morphology resulting from limited solubility. Interestingly, fluorine-free PPDI-DT-DTBT film exhibited the ELUMO of −3.85 eV and afforded the highest OFET electron mobility of 2.2 × 10−2 cm2 V−1 s−1. This finding implied that it was cautious to prolong the flexible side chain during the A-A type PDI-containing PAs, however, monofluorinating the benzothiadiazole moiety was an effective scenario by the virtue of tuning the molecular configuration and lifting the charge mobility, with an aim at elevating the photovoltaic performance in all-polymer solar cells.
{"title":"Acceptor-acceptor type perylenediimide-based polymeric acceptors with large 2-decyltetradecyl flexible side chain: Synthesis and impact of fluorination","authors":"Zheyu Li , Daoyou Li , Yifan Bao , Pengzhi Guo , Zezhou Liang , Chunyan Yang , Junfeng Tong","doi":"10.1016/j.optmat.2025.116932","DOIUrl":"10.1016/j.optmat.2025.116932","url":null,"abstract":"<div><div>Acceptor-acceptor (A-A) type perylenediimide (PDI)-based polymeric acceptors (PAs) possessed a high air stability and an excellent charge mobility. However, few efforts devoted to A-A type PDI-based polymeric acceptors and the interplay between the structure and photovoltaic performance was still nebulous. Herein, three A-A type PDI-based PAs PPDI-DT-DTBT, PPDI-DT-DTFBT and PPDI-DT-DTFFBT with large flexible 2-decyltetradecyl (DT) side chains were developed to probe into the effect of different fluorination at the benzothiadiazole (BT) moiety. And the donor-acceptor (D-A) type polymer acceptor PPDI-DT-2T without BT unit was prepared to make the comparison. All of them exhibited the high thermo-stability and solution state photo-stability. Gradually increased fluorine substituents acquired the blue-shifted absorption, the increased bandgap, the raised <em>E</em><sub>LUMO</sub>, more planar molecular configuration and strengthened aggregation. Accordingly, with the widely developed donor polymer PTB7-Th as electron donor, bulk heterojunction device based on monfluorinated PPDI-DT-DTFBT obtained the middle <em>V</em><sub>OC</sub> of 0.70 V, the highest <em>J</em><sub>SC</sub> of 6.22 mA cm<sup>−2</sup> and FF of 37.56 %, contributing to the winning power conversion efficiency (PCE) of 1.63 %. By contrast, fluorine-free PPDI-DT-DTBT- and difluorinated PPDI-DT-DTFFBT-based devices acquired the inferior PCEs of 1.31 % and 1.24 %. The control polymer accepter PPDI-DT-2T got the PCE of 1.27 % regardless of the high <em>V</em><sub>OC</sub> of 0.80 V as the result of high <em>E</em><sub>LUMO</sub>. The raised PCE after monofluorination was mainly originated from the increased <em>J</em><sub>SC</sub> and FF, which was due to the improved absorption and the higher electron mobility. The observed low efficiency in these DT-side chain modified PDI polymeric acceptors was probably due to the large aggregation and the coarse surface morphology resulting from limited solubility. Interestingly, fluorine-free PPDI-DT-DTBT film exhibited the <em>E</em><sub>LUMO</sub> of −3.85 eV and afforded the highest OFET electron mobility of 2.2 × 10<sup>−2</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>. This finding implied that it was cautious to prolong the flexible side chain during the A-A type PDI-containing PAs, however, monofluorinating the benzothiadiazole moiety was an effective scenario by the virtue of tuning the molecular configuration and lifting the charge mobility, with an aim at elevating the photovoltaic performance in all-polymer solar cells.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116932"},"PeriodicalIF":3.8,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-11DOI: 10.1016/j.optmat.2025.116930
Krzysztof Dorywalski , Nathalie Lemée , Mariem Gharbi , Andreas Zeinert , Paweł Rochowski , Stanisław Pogorzelski , Michał Piasecki
Lead titanate PbTiO3 ferroelectric thin films were epitaxially grown by pulsed laser deposition on strontium titanate SrTiO3 substrates. Two samples of thicknesses 117 nm and 313 nm were investigated. The a/c polydomain structure, which results from a partial relaxation of the epitaxial strain, was evidenced in the thicker film. The real and imaginary parts of the complex dielectric function were determined in a broad photon energy range of 2–9.8 eV using spectroscopic ellipsometry. The energy gap values and critical point energies were determined for the both films. An effect of the epitaxy on the optical functions obtained is detected and discussed. The results showed, that even in the case of a relatively small mismatch between the layer and substrate lattice constants, the effect of epitaxy on the optical properties of ferroelectric films is not negligible.
{"title":"VIS-UV-VUV optical functions of epitaxial ferroelectric PbTiO3/SrTiO3 thin films","authors":"Krzysztof Dorywalski , Nathalie Lemée , Mariem Gharbi , Andreas Zeinert , Paweł Rochowski , Stanisław Pogorzelski , Michał Piasecki","doi":"10.1016/j.optmat.2025.116930","DOIUrl":"10.1016/j.optmat.2025.116930","url":null,"abstract":"<div><div>Lead titanate PbTiO<sub>3</sub> ferroelectric thin films were epitaxially grown by pulsed laser deposition on strontium titanate SrTiO<sub>3</sub> substrates. Two samples of thicknesses 117 nm and 313 nm were investigated. The a/c polydomain structure, which results from a partial relaxation of the epitaxial strain, was evidenced in the thicker film. The real and imaginary parts of the complex dielectric function were determined in a broad photon energy range of 2–9.8 eV using spectroscopic ellipsometry. The energy gap values and critical point energies were determined for the both films. An effect of the epitaxy on the optical functions obtained is detected and discussed. The results showed, that even in the case of a relatively small mismatch between the layer and substrate lattice constants, the effect of epitaxy on the optical properties of ferroelectric films is not negligible.</div></div>","PeriodicalId":19564,"journal":{"name":"Optical Materials","volume":"162 ","pages":"Article 116930"},"PeriodicalIF":3.8,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143629559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}