{"title":"An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement","authors":"Hanqi Gao;Jing Jin;Jianjun Zhou","doi":"10.1109/JEDS.2024.3453408","DOIUrl":null,"url":null,"abstract":"An extraction method to obtain the noise model parameter \n<inline-formula> <tex-math>$T_{\\mathrm { d}}$ </tex-math></inline-formula>\n in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is presented. A simplified noise equivalent circuit, along with closed-form solutions to calculate the RF noise figure of MOSFET is developed. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for \n<inline-formula> <tex-math>$16\\times 1\\times 2{{\\mu }\\rm m}$ </tex-math></inline-formula>\n (number of gate fingers \n<inline-formula> <tex-math>$\\times $ </tex-math></inline-formula>\n unit gatewidth \n<inline-formula> <tex-math>$\\times $ </tex-math></inline-formula>\n cells) gatelength MOSFETs.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10663413","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10663413/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
An extraction method to obtain the noise model parameter
$T_{\mathrm { d}}$
in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is presented. A simplified noise equivalent circuit, along with closed-form solutions to calculate the RF noise figure of MOSFET is developed. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for
$16\times 1\times 2{{\mu }\rm m}$
(number of gate fingers
$\times $
unit gatewidth
$\times $
cells) gatelength MOSFETs.
期刊介绍：
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
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