{"title":"Improvement of the Internal Quantum Efficiency of III-Nitride Blue Micro-Light-Emitting Diodes by the Hole Accelerator at the Low Current Density","authors":"An-Chi Wei, Sheng-Hsiang Wang, Jyh-Rou Sze, Quoc-Hung Pham","doi":"10.1002/adpr.202300262","DOIUrl":null,"url":null,"abstract":"<p>The hole accelerator is proven to benefit the hole injection for traditional light-emitting diodes (LEDs) because the induced electric field provides the holes with more kinetic energy to pass through the electron-blocking layer, enhancing the hole injection efficiency. Herein, the effect of the hole accelerator (HA) layer on the micro-LEDs by modeling the characteristics of the devices with a current density of lower than 10 A cm<sup>−2</sup> is investigated. The simulation results show that the appended HA layer brings a knot of the electric field in the HA layer, leading to higher internal quantum efficiency (IQE) than the device without HA under the low current density. The thickness and composition of HA, the quantum number, and the material of quantum barrier are also simulated and analyzed. The simulated radiative, Shockley–Read–Hall, and Auger recombination rates show that the IQE of the micro-LED with the HA layer is higher than that without the HA layer under the current density of lower than 10 A cm<sup>−2</sup>.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":null,"pages":null},"PeriodicalIF":3.7000,"publicationDate":"2024-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202300262","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Photonics Research","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adpr.202300262","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The hole accelerator is proven to benefit the hole injection for traditional light-emitting diodes (LEDs) because the induced electric field provides the holes with more kinetic energy to pass through the electron-blocking layer, enhancing the hole injection efficiency. Herein, the effect of the hole accelerator (HA) layer on the micro-LEDs by modeling the characteristics of the devices with a current density of lower than 10 A cm−2 is investigated. The simulation results show that the appended HA layer brings a knot of the electric field in the HA layer, leading to higher internal quantum efficiency (IQE) than the device without HA under the low current density. The thickness and composition of HA, the quantum number, and the material of quantum barrier are also simulated and analyzed. The simulated radiative, Shockley–Read–Hall, and Auger recombination rates show that the IQE of the micro-LED with the HA layer is higher than that without the HA layer under the current density of lower than 10 A cm−2.
事实证明,空穴加速器有利于传统发光二极管(LED)的空穴注入,因为诱导电场为空穴提供了更多的动能,使其能够穿过电子阻挡层,从而提高了空穴注入效率。本文通过模拟电流密度低于 10 A cm-2 的器件特性,研究了空穴加速器(HA)层对微型发光二极管的影响。模拟结果表明,在低电流密度下,附着的 HA 层会带来 HA 层中的电场结,从而使器件的内部量子效率(IQE)高于不附着 HA 层的器件。此外,还对 HA 的厚度和成分、量子数以及量子势垒的材料进行了模拟和分析。模拟的辐射、肖克利-雷德-霍尔和奥格重组率表明,在低于 10 A cm-2 的电流密度下,有 HA 层的微型 LED 的 IQE 比没有 HA 层的要高。