Wentao Xiong, Weidong Tang, Gan Zhang, Yichen Yang, Yangning Fan, Ke Zhou, Chen Zou, Baodan Zhao, Dawei Di
{"title":"Controllable p- and n-type behaviours in emissive perovskite semiconductors","authors":"Wentao Xiong, Weidong Tang, Gan Zhang, Yichen Yang, Yangning Fan, Ke Zhou, Chen Zou, Baodan Zhao, Dawei Di","doi":"10.1038/s41586-024-07792-4","DOIUrl":null,"url":null,"abstract":"Reliable control of the conductivity and its polarity in semiconductors is at the heart of modern electronics1–7, and has led to key inventions including diodes, transistors, solar cells, photodetectors, light-emitting diodes and semiconductor lasers. For archetypal semiconductors such as Si and GaN, positive (p)- and negative (n)-type conductivities are achieved through the doping of electron-accepting and electron-donating elements into the crystal lattices, respectively1–6. For halide perovskites, which are an emerging class of semiconductors, mechanisms for reliably controlling charge conduction behaviours while maintaining high optoelectronic qualities are yet to be discovered. Here we report that the p- and n-type characteristics in a wide-bandgap perovskite semiconductor can be adjusted by incorporating a phosphonic acid molecular dopant with strong electron-withdrawing abilities. The resultant carrier concentrations were more than 1013 cm−3 for the p- and n-type samples, with Hall coefficients ranging from −0.5 m3 C−1 (n-type) to 0.6 m3 C−1 (p-type). A shift of the Fermi level across the bandgap was observed. Importantly, the transition from n- to p-type conductivity was achieved while retaining high photoluminescence quantum yields of 70–85%. The controllable doping in the emissive perovskite semiconductor enabled the demonstration of ultrahigh brightness (more than 1.1 × 106 cd m−2) and exceptional external quantum efficiency (28.4%) in perovskite light-emitting diodes with a simple architecture. The charge carrier polarity and concentrations in an emissive perovskite semiconductor can be adjusted by incorporating a molecular dopant widely used for the passivation and structural control of optoelectronic perovskite materials.","PeriodicalId":18787,"journal":{"name":"Nature","volume":null,"pages":null},"PeriodicalIF":50.5000,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nature","FirstCategoryId":"103","ListUrlMain":"https://www.nature.com/articles/s41586-024-07792-4","RegionNum":1,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0
Abstract
Reliable control of the conductivity and its polarity in semiconductors is at the heart of modern electronics1–7, and has led to key inventions including diodes, transistors, solar cells, photodetectors, light-emitting diodes and semiconductor lasers. For archetypal semiconductors such as Si and GaN, positive (p)- and negative (n)-type conductivities are achieved through the doping of electron-accepting and electron-donating elements into the crystal lattices, respectively1–6. For halide perovskites, which are an emerging class of semiconductors, mechanisms for reliably controlling charge conduction behaviours while maintaining high optoelectronic qualities are yet to be discovered. Here we report that the p- and n-type characteristics in a wide-bandgap perovskite semiconductor can be adjusted by incorporating a phosphonic acid molecular dopant with strong electron-withdrawing abilities. The resultant carrier concentrations were more than 1013 cm−3 for the p- and n-type samples, with Hall coefficients ranging from −0.5 m3 C−1 (n-type) to 0.6 m3 C−1 (p-type). A shift of the Fermi level across the bandgap was observed. Importantly, the transition from n- to p-type conductivity was achieved while retaining high photoluminescence quantum yields of 70–85%. The controllable doping in the emissive perovskite semiconductor enabled the demonstration of ultrahigh brightness (more than 1.1 × 106 cd m−2) and exceptional external quantum efficiency (28.4%) in perovskite light-emitting diodes with a simple architecture. The charge carrier polarity and concentrations in an emissive perovskite semiconductor can be adjusted by incorporating a molecular dopant widely used for the passivation and structural control of optoelectronic perovskite materials.
期刊介绍:
Nature is a prestigious international journal that publishes peer-reviewed research in various scientific and technological fields. The selection of articles is based on criteria such as originality, importance, interdisciplinary relevance, timeliness, accessibility, elegance, and surprising conclusions. In addition to showcasing significant scientific advances, Nature delivers rapid, authoritative, insightful news, and interpretation of current and upcoming trends impacting science, scientists, and the broader public. The journal serves a dual purpose: firstly, to promptly share noteworthy scientific advances and foster discussions among scientists, and secondly, to ensure the swift dissemination of scientific results globally, emphasizing their significance for knowledge, culture, and daily life.