Controlling the spontaneous emission of the telecom O-band centers in Silicon-on-Insulator with coherent dipole-quadrupole interactions on a silicon pillar lattice
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引用次数: 0
Abstract
The G-center in silicon-on-insulator (SOI) has emerged as a relevant single photon source due to the zero-phonon line at 1278 nm, matching the O-band of optical telecommunication wavelengths. Due to the weak emission of the G-center from planar SOI, it is necessary to enhance its emission, in terms of collection efficiency and fluorescence enhancement, to further study its optical properties for application in quantum technologies. Here we design a fabrication-ready SOI Mie-resonator made of a lattice of silicon nanopillars on silica to achieve the spontaneous emission enhancement of single G-centers. Using Si nanopillars lattice on silica with period and dimensions optimized, owing to the coherent superposition of the electric dipolar and magnetic quadrupolar electromagnetic Mie-scattering moments of the individual pillars to the periodic lattice, we show the G-center emission/decay rate enhancement averaged over it's possible dipole orientations is about 13 times compared to bulk. This corresponds to a fluorescence enhancement of about 125 times compared to bulk and about 5-6 times compared to an optimized single pillar with photon collection with a confocal objective. These results provide a fabrication pathway for out-of-plane single photon collection from the SOI G-center or other telecom O-band single-photon sources for their potential deployment in CMOS-compatible quantum optical technologies.
由于硅绝缘体（SOI）中的 G 中心在 1278 纳米波长处具有零声子线，与光通信波长的 O 波段相匹配，因此已成为一种相关的单光子源。由于平面 SOI 的 G 中心发射较弱，因此有必要在收集效率和荧光增强方面增强其发射，以进一步研究其光学特性，将其应用于量子技术。在这里，我们设计了一种可制造的 SOI 米埃谐振器，由硅纳米柱晶格在二氧化硅上制成，以实现单个 G 中心的自发辐射增强。利用硅纳米柱晶格（其周期和尺寸均已优化），由于单个硅柱的电偶极和磁四极电磁米氏散射矩与周期性晶格的相干叠加，我们发现 G 中心的发射/衰减率在其可能的偶极取向上的平均值比主体增强了约 13 倍。这相当于荧光增强效果是块体的约 125 倍，是用共聚焦物镜收集光子的优化单柱的约 5-6 倍。这些结果为从 SOI G 中心或其他电信 O 波段单光子源进行面外单光子收集提供了一种制造途径，使其有可能应用于 CMOS 兼容型量子光学技术。
期刊介绍：
The purpose of the Journal of Luminescence is to provide a means of communication between scientists in different disciplines who share a common interest in the electronic excited states of molecular, ionic and covalent systems, whether crystalline, amorphous, or liquid.
We invite original papers and reviews on such subjects as: exciton and polariton dynamics, dynamics of localized excited states, energy and charge transport in ordered and disordered systems, radiative and non-radiative recombination, relaxation processes, vibronic interactions in electronic excited states, photochemistry in condensed systems, excited state resonance, double resonance, spin dynamics, selective excitation spectroscopy, hole burning, coherent processes in excited states, (e.g. coherent optical transients, photon echoes, transient gratings), multiphoton processes, optical bistability, photochromism, and new techniques for the study of excited states. This list is not intended to be exhaustive. Papers in the traditional areas of optical spectroscopy (absorption, MCD, luminescence, Raman scattering) are welcome. Papers on applications (phosphors, scintillators, electro- and cathodo-luminescence, radiography, bioimaging, solar energy, energy conversion, etc.) are also welcome if they present results of scientific, rather than only technological interest. However, papers containing purely theoretical results, not related to phenomena in the excited states, as well as papers using luminescence spectroscopy to perform routine analytical chemistry or biochemistry procedures, are outside the scope of the journal. Some exceptions will be possible at the discretion of the editors.
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