Journal of Luminescence最新文献

DFT and experimental investigation of nanostructured boron subphthalocyanine chloride-films based hybrid photodiodes: Bridging organic and inorganic materials for sustainable light detection 基于纳米结构亚酞菁氯硼薄膜的杂化光电二极管的DFT和实验研究：用于可持续光探测的桥接有机和无机材料

IF 3.6 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence

Pub Date : 2026-05-01 Epub Date: 2026-01-21 DOI: 10.1016/j.jlumin.2026.121757

Ibtisam Alali , Nada Alhathlaul , Alaa Muqbil Alsirhani , Shimaa Abdel Halim , A.A.M. Farag

This study presents a comprehensive investigation of boron subphthalocyanine chloride (B-SubPcCl), combining computational and experimental approaches to reveal its unique structural, electronic, and optoelectronic characteristics. DFT calculations at the B3LYP/SDD level reveal that the molecule adopts a non-planar geometry and exhibits a ground-state energy gap of 2.68 eV, a substantial dipole moment of 8.19 D, and a first hyperpolarizability significantly exceeding that of urea, confirming its strong nonlinear optical (NLO) potential. Complementary NBO and MEP analyses demonstrate pronounced intramolecular charge transfer and clearly defined reactive regions, emphasizing the molecule's inherent electronic versatility and suitability for advanced optoelectronic applications. Experimentally, thermally evaporated thin films exhibit uniform nanocrystalline morphology with an average grain size of 27.1 nm and low RMS roughness (∼2.8 nm), as confirmed by HRTEM and AFM. Optical studies reveal multiple band gaps (1.35, 2.24, and 2.78 eV) with broad absorption spanning UV–visible–NIR regions. The Au/B-SubPcCl/n-Si/Al heterojunction shows strong rectifying behavior with a dark rectification ratio exceeding 10³, high responsivity, and detectivity, alongside fast, stable phototransient response and a light-dependent resistance ratio above 30 at −2 V. These results establish B-SubPcCl as a highly promising material for advanced optoelectronic and NLO devices, combining computational predictions with experimental validation to highlight its novel multifunctional performance.

本研究对亚酞菁氯化硼（B-SubPcCl）进行了全面的研究，结合计算和实验方法揭示了其独特的结构、电子和光电子特性。在B3LYP/SDD水平上的DFT计算表明，该分子具有非平面几何结构，基态能隙为2.68 eV，偶极矩为8.19 D，第一超极化率明显超过尿素，证实其具有很强的非线性光学（NLO）潜力。互补的NBO和MEP分析显示了明显的分子内电荷转移和明确定义的反应区，强调了分子固有的电子多功能性和先进光电应用的适用性。实验中，热蒸发薄膜表现出均匀的纳米晶形态，平均晶粒尺寸为27.1 nm， RMS粗糙度低（~ 2.8 nm），由HRTEM和AFM证实。光学研究显示多个带隙（1.35,2.24和2.78 eV）具有广泛的吸收，跨越紫外可见-近红外区域。Au/B-SubPcCl/n-Si/Al异质结具有强整流行为，暗整流比超过103，高响应率和探测率，以及快速，稳定的光瞬态响应和在−2 V下超过30的光相关电阻比。这些结果表明B-SubPcCl是一种非常有前途的先进光电和NLO器件材料，将计算预测与实验验证相结合，以突出其新颖的多功能性能。

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引用次数: 0

Peculiarities in the prompt isothermal luminescence decay of four feldspars 四种长石的快速等温发光衰减特性

IF 3.6 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence

Pub Date : 2026-05-01 Epub Date: 2026-01-22 DOI: 10.1016/j.jlumin.2026.121777

Th. Lampoudi , P. Konstandinidis , G.S. Polymeris , G. Kitis

The prompt isothermal (PID) decay of luminescence at a stable temperature is defined as an specific stimulated luminescence effect. The PID stimulation mode is described by three types of analytical expressions: two derived from the one-trap-one-recombination model (OTOR) and another from the tunneling recombination model. These two families of models exhibit potentially significant differences. Specifically, the OTOR-based is expected to retain an exponential dependence of the decay on temperature, whereas the tunneling recombination model may exhibit temperature-independent behavior. The present work studies the PID of luminescence of four feldspar samples in order to investigate the delocalized or localized nature of the decay. The initial rise technique was applied in order to examine if the glow curve of all feldspar are due to discrete or continuous energy levels. All PID curves obtained were fitted by three analytical expressions derived from OTOR delocalized and localized models as well as from a tunneling (localized) recombination model. The results showed that the PID effect presents a weak dependence of decay temperature yielding activation energy values much lower that the values of initial rise. Special attention was given to fitting parameters which are microscopic quantities characteristic of the trapping and recombination systems. The basic question arisen from this work is why in the framework of the same measurement the TL during linear heating is due to delocalized transitions whereas the TL from decay at stable temperature is due to localized transitions.

在稳定温度下，发光的快速等温衰减被定义为一种特定的受激发光效应。PID增产模式由三种解析表达式描述：两种来自一圈闭一重组模型（OTOR），另一种来自隧道重组模型。这两类模型表现出潜在的显著差异。具体来说，基于otor的模型预计将保持衰减对温度的指数依赖性，而隧道复合模型可能表现出与温度无关的行为。本文研究了四种长石样品的发光PID，以探讨其衰变的离域或局域性质。采用最初的上升技术是为了检验所有长石的发光曲线是由于离散的还是连续的能级。所有得到的PID曲线都是由OTOR离域和局部模型以及隧道（局部）重组模型导出的三个解析表达式拟合的。结果表明，PID效应对衰减温度的依赖性较弱，产生的活化能值远低于初始上升值。特别注意了圈闭和复合系统的微观特征参数的拟合。从这项工作中产生的基本问题是，为什么在同一测量的框架中，线性加热期间的TL是由于离域跃迁，而稳定温度下衰变的TL是由于局部跃迁。

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引用次数: 0

Ultrafast carrier dynamics related to energy transfer and hole transfer in (PEA)2PbI4/MoS2 heterostructure （PEA）2PbI4/MoS2异质结构中与能量转移和空穴转移相关的超快载流子动力学

IF 3.6 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence

Pub Date : 2026-05-01 Epub Date: 2026-02-11 DOI: 10.1016/j.jlumin.2026.121798

Meng Xue , Shuwen Zheng , Zhongpo Zhou , Jian Song , Zhaoyong Jiao , Shuhong Ma , Guangrui Jia , Chaochao Qin

The emergence of van der Waals heterostructures based on two-dimensional (2D) transition metal dichalcogenides (TMDs) and perovskites has provided a good basis for the study of high-performance photodetectors, light-emitting diodes, and other optoelectronic devices in recent years. This study focuses on the heterostructure formed by two-dimensional perovskite (PEA)₂PbI₄ and monolayer MoS₂. The interface transfer behavior of the heterostructure was obtained using femtosecond transient absorption spectra at different excitation wavelengths. The research results show that there are both hole transfer and energy transfer within the (PEA)₂PbI₄/MoS₂ heterostructure. The hole transfer rate constant is 2 × 10¹¹ s⁻¹. However, due to the large band gap of the organic spacer layer of (PEA)₂PbI₄, the direct electron transfer process is blocked. This discovery provides a reference for in-depth exploration of the potential applications in the field of optoelectronic devices.

基于二维（2D）过渡金属二硫族化物（TMDs）和钙钛矿的范德华异质结构的出现，为近年来高性能光电探测器、发光二极管和其他光电器件的研究提供了良好的基础。本文主要研究了二维钙钛矿（PEA）2PbI4与单层MoS2形成的异质结构。利用飞秒瞬态吸收光谱分析了不同激发波长下异质结构的界面转移行为。研究结果表明，（PEA）2PbI4/MoS2异质结构中存在空穴转移和能量转移。空穴转移速率常数为2 × 1011s−1。然而，由于（PEA）2PbI4有机间隔层的带隙较大，阻碍了电子的直接传递过程。这一发现为深入探索其在光电器件领域的潜在应用提供了参考。

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引用次数: 0

Construction of dynamic lighting system based on chlorophyll absorption efficacy and its regulation effect on lettuce growth 基于叶绿素吸收效应的动态照明系统构建及其对生菜生长的调节作用

IF 3.6 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence

Pub Date : 2026-05-01 Epub Date: 2026-02-05 DOI: 10.1016/j.jlumin.2026.121792

Lili Zheng , Ziquan Guo

In response to the need for optimizing the light quality of artificial lighting in indoor agriculture, this study proposes an adaptive plant illumination system based on chlorophyll absorption efficacy (CAE), using loose-leaf lettuce as the subject. The system utilizes a five-channel light-emitting diode (LED) array—comprising red (640 nm, 660 nm), green (540 nm), and blue (430 nm, 470 nm) wavelengths—to dynamically simulate the spectral variations of natural light across different seasons and times of day. This is achieved through a combination of a pre-programmed spectral recipe database and real-time clock control. Experimental results indicate that the system can accurately replicate the diurnal variation trend of natural light CAE, with Pearson correlation coefficients exceeding 0.97 across all four seasons and an average relative error below 1.04%. Further cultivation validation experiments demonstrate that, compared to a fixed red-blue spectrum, lettuce grown under CAE dynamic spectra exhibited significant advantages during the mid-to-late growth stages. At harvest, plant width, height, leaf number, and individual fresh weight were notably increased, with fresh weight rising by approximately 21.5%. This study confirms the effectiveness of the dynamic lighting system based on CAE in both spectral simulation accuracy and plant growth promotion, offering a reliable technical approach for intelligent light environment management and enhanced light energy utilization efficiency in plant factories.

针对室内农业人工照明光质量优化的需求，本研究以散叶莴苣为研究对象，提出了一种基于叶绿素吸收效率（CAE）的植物自适应照明系统。该系统利用一个五通道发光二极管（LED）阵列——包括红光（640nm、660nm）、绿光（540nm）和蓝光（430nm、470nm）波长——来动态模拟自然光在不同季节和一天中不同时间的光谱变化。这是通过预先编程的光谱配方数据库和实时时钟控制相结合来实现的。实验结果表明，该系统能准确再现自然光CAE的日变化趋势，四季的Pearson相关系数均超过0.97，平均相对误差小于1.04%。进一步的栽培验证试验表明，与固定红蓝光谱相比，在CAE动态光谱下生长的生菜在生长中后期表现出显著的优势。收获时，株宽、株高、叶片数和单株鲜重显著增加，其中鲜重增加约21.5%。本研究证实了基于CAE的动态照明系统在光谱模拟精度和促进植物生长方面的有效性，为植物工厂智能光环境管理和提高光能利用效率提供了可靠的技术途径。

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引用次数: 0

Stairstep Cu4I4 cluster with n-butyldimethylsilyl thiophenyl triphosphine: Structure and photophysical properties 含正丁基二甲基硅基噻吩三膦的阶梯Cu4I4簇：结构和光物理性质

IF 3.6 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence

Pub Date : 2026-05-01 Epub Date: 2026-02-06 DOI: 10.1016/j.jlumin.2026.121789

Han Yang , Ruiqin Zhu , Li Liu , Xin-Xin Zhong , Fa-Bao Li , Guijiang Zhou , Hai-Mei Qin

Highly efficient OLEDs fabricated with mononuclear Cu(I) halide complexes containing rigid aryl triphosphine ligands have attracted much attention. However, there are no reports on copper halide clusters containing rigid triphosphine ligands. Here, one rigid triphosphine ligand L1 and one tetranuclear copper(I) iodide stairstep cluster 1 [Cu₄I₄(L1)₂, L1 = (2-PPh₂-5-Si(n-Bu)Me₂-C₄HS)₂ (3-PPh)], were successfully synthesized. At room temperature, cluster 1 in powder emits yellow green delayed fluorescence (λ_em = 554 nm, τ = 4.9 μs, Φ = 0.25), and at 77 K, it emits yellow green phosphorescence (λ_em = 543 nm, τ = 104 μs). Based on the TDDFT calculations, the emission of cluster 1 mainly originates from metal-to-ligand charge transfer (MLCT) and halogen-to-ligand charge transfer (XLCT). Cluster 1 shows good thermal stability with the onset decomposition temperature (T_dec) of 421 °C. Cluster 1-based solution-processed devices exhibit greenish yellow light with the highest EQE of 2.30% and the maximum luminance of 1661 cd m⁻².

用含有刚性芳基三膦配体的单核卤化物配合物制备高效有机发光二极管引起了人们的广泛关注。然而，没有关于含有刚性三膦配体的卤化铜簇的报道。本文成功合成了1个刚性三膦配体L1和1个四核碘化铜阶梯簇1 [Cu4I4(L1)2, L1 = (2- pph2 -5- si (n-Bu)Me2-C4HS)2 (3-PPh)]。粉末中的团簇1在室温下发出黄绿色延迟荧光（λem = 554 nm, τ = 4.9 μs， Φ = 0.25），在77 K时发出黄绿色延迟荧光（λem = 543 nm, τ = 104 μs）。根据TDDFT计算，簇1的发射主要来源于金属到配体的电荷转移（MLCT）和卤素到配体的电荷转移（XLCT）。簇1具有良好的热稳定性，起始分解温度（Tdec）为421℃。基于簇1的溶液处理器件呈现出黄绿色光，EQE最高为2.30%，最大亮度为1661 cd m−2。

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引用次数: 0

Defect–phonon mediated anti-stokes white emission in carbon materials 碳材料中缺陷声子介导的抗斯托克斯白发射

IF 3.6 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence

Pub Date : 2026-05-01 Epub Date: 2026-02-10 DOI: 10.1016/j.jlumin.2026.121801

S. Rekhviashvili , D. Gaev , Z. Margushev

Broadband anti-Stokes emission is observed in various carbon-based materials, including polycrystalline graphite, fullerenes, carbon nanotubes, and graphene foams. Despite numerous reports, a comprehensive microscopic understanding remains elusive. Here, we present a model in which laser-excited electron–hole pairs localized at structural defects interact with a thermal vibrational reservoir, enabling phonon-assisted anti-Stokes recombination. The model reproduces key spectral features, including a central peak and its equidistant phonon sidebands. Comparative measurements indicate that highly ordered pyrolytic graphite exhibits negligible anti-Stokes emission, highlighting the essential role of structural disorder and defect-mediated vibrational coupling. These results provide a unified framework for interpreting broadband anti-Stokes emission in defected sp²-carbon networks and suggest strategies for controlled generation of high-energy photons via defect engineering.

宽带反斯托克斯发射可以在多种碳基材料中观察到，包括多晶石墨、富勒烯、碳纳米管和石墨烯泡沫。尽管有许多报道，但全面的微观理解仍然难以捉摸。在这里，我们提出了一个模型，其中激光激发的电子-空穴对定位在结构缺陷与热振动储层相互作用，使声子辅助的反斯托克斯复合。该模型再现了关键的光谱特征，包括一个中心峰及其等距声子边带。对比测量表明，高度有序的热解石墨表现出可忽略不计的反斯托克斯发射，突出了结构无序和缺陷介导的振动耦合的重要作用。这些结果为解释有缺陷sp2-碳网络中的宽带反斯托克斯发射提供了一个统一的框架，并提出了通过缺陷工程控制高能光子产生的策略。

引用次数: 0

Electroluminescence of 1.65 μm near-infrared wavelength quantum cascade lasers using Si/CaF2 heterostructures 基于Si/CaF2异质结构的1.65 μm近红外量子级联激光器的电致发光研究

IF 3.6 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence

Pub Date : 2026-05-01 Epub Date: 2026-01-29 DOI: 10.1016/j.jlumin.2026.121786

Zhiyuan Fan, Haibo Wang, Hyuma Suzuki, Masahiro Watanabe

We have demonstrated a room temperature near-infrared electroluminescence (EL) at a wavelength of λ = 1.65 μm from Si/CaF₂ quantum cascade laser structure. Five periods of the active layer were epitaxially grown on an n-Si (111) layer of a silicon-on-insulator (SOI) substrate, forming a single-mode propagation waveguide in transverse magnetic (TM) mode grown by molecular beam epitaxy (MBE). The active layer structure consists of a 5-monolayer (ML) transition layer quantum well, double-injector-barrier and a 4-ML blocking layer. EL spectra exhibiting multiple peaks in the near-infrared region were obtained at room temperature, and the dependence of EL intensity on the injection current clearly confirmed that the emission originated from carrier injection. Moreover, a peak shift toward longer wavelengths was observed with increasing applied voltage, and preliminary estimates confirm that the magnitude of the shift is consistent with an interpretation based on the Stark effect, strongly suggesting that the emission originates from inter subband transition of intended design.

研究了Si/CaF2量子级联激光器在λ = 1.65 μm波长下的室温近红外电致发光。将5个周期的有源层外延生长在绝缘体上硅（SOI）衬底的n-Si（111）层上，形成分子束外延（MBE）生长的横向磁（TM）模式单模传播波导。活性层结构由一个5-单层（ML）过渡层量子阱、双注入器势垒和一个4-ML阻塞层组成。在室温下获得了近红外区多峰的EL光谱，EL强度与注入电流的关系清楚地证实了发射来自载流子注入。此外，随着施加电压的增加，观察到向更长波长的峰移，并且初步估计证实了位移的大小与基于Stark效应的解释一致，强烈表明发射源于预期设计的子带间跃迁。

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引用次数: 0

Optical and electronic properties of zero-dimensional-type lithium hafnium iodide scintillator 零维型碘化铪锂闪烁体的光学和电子性质

IF 3.6 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence

Pub Date : 2026-05-01 Epub Date: 2026-02-03 DOI: 10.1016/j.jlumin.2026.121784

Chihaya Fujiwara , Shunsuke Kurosawa , Akihiro Yamaji , Akira Yoshikawa , Nishiki Matsubayashi , Takushi Takata , Hiroki Tanaka

Zero-dimensional (0D) halides with the general formula A₂BX₆ (such as Cs₂HfI₆) have emerged as a promising class of next-generation scintillator materials characterized by their high luminescence efficiency. This study investigated the novel 0D halide Li₂HfI₆, where A-site Li⁺ substitution induces a structural transition to a rhombohedral structure. Comprehensive experimental and density functional theory (DFT) analyses reveal that Li⁺ substitution facilitates carrier delocalization. Temperature-dependent photoluminescence identified a shallow 17 meV de-trapping barrier from the self-trapped exciton (STE) to the free exciton (FE) state. This thermally induced transition, paralleling phenomena well-observed in 2D perovskites, results in a coexistence of high-energy FE and low-energy STE emissions at room temperature. The emergence of the FE component enables a rapid scintillation decay time of less than 100 ns. In addition, Li₂HfI₆ achieves a high thermal neutron light yield of 17,000 photons/neutron, which is approximately three times higher than commercial ⁶Li-glass. These characteristics demonstrate that Li₂HfI₆ is a promising candidate for ³He-alternative technologies. This work establishes A-site cation engineering as an effective design principle for controlling the structure and luminescence properties of 0D halide neutron scintillators.

通式为A2BX6的零维卤化物（如Cs2HfI6）因其发光效率高而成为下一代闪烁体材料中很有前途的一类。本研究研究了新型0D卤化物Li2HfI6，其中a位Li+取代诱导结构转变为菱形结构。综合实验和密度泛函理论（DFT）分析表明，Li+取代有利于载流子离域。温度依赖的光致发光发现了一个从自捕获激子（STE）到自由激子（FE）状态的浅17 meV脱陷屏障。这种热诱导转变，在二维钙钛矿中很好地观察到平行现象，导致室温下高能FE和低能STE共存。FE分量的出现使得快速的闪烁衰减时间小于100ns。此外，Li2HfI6实现了17000光子/中子的高热中子产光率，大约是商用6li玻璃的三倍。这些特征表明，Li2HfI6是3he替代技术的有希望的候选者。本工作确立了a位阳离子工程作为控制0D卤化物中子闪烁体结构和发光特性的有效设计原则。

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引用次数: 0

Intense green upconversion and temperature sensing properties of GdAl3(BO3)4: Er3+ and Er3+/Yb3+ phosphors GdAl3(BO3)4: Er3+和Er3+/Yb3+荧光粉的强绿色上转换和温度传感性能

IF 3.6 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence

Pub Date : 2026-05-01 Epub Date: 2026-01-19 DOI: 10.1016/j.jlumin.2026.121763

Venkata Surya Bhagavan Netheti , Bungala Chinna Jamalaiah , Pidaparthy Lalitha Saranya , Guddety Ramachandra Reddy , Mangali Madhu Sekhar

GdAl₃(BO₃)₄: Er³⁺ and Er³⁺/Yb³⁺ phosphors were prepared through solid state reaction method and characterized. The crystalline phase was studied by powder X-ray diffraction technique, the occurrence of several vibrational bonds was recognized by Fourier transform infrared spectroscopy and the surface morphology was verified by scanning electron microscopy. The down and up conversion emission spectra reveal three emission bands related to ²H_11/2 → ⁴I_15/2 (∼521 nm), ⁴S_3/2 → ⁴I_15/2 (∼547 nm) and ⁴F_9/2 → ⁴I_15/2 (∼658 nm) transitions up on 377 nm and 980 nm excitation, respectively. An effective sensitization of Yb³⁺ ions improves the intensity of green emission upon 980 nm upconversion. The GdAl₃(BO₃)₄: 1 %Er³⁺/3 %Yb³⁺ phosphor exhibited a noteworthy thermal stability with an activation energy of 0.314 eV. The same was more potential for not only the design of green LEDs, but also for non-contact temperature sensing devices. It possesses an absolute sensitivity of 0.00415 K⁻¹ at 473 K and relative sensitivity of 0.576 % K⁻¹ at 373 K with an excellent thermal cycling repeatability.

采用固相反应法制备了GdAl3(BO3)4: Er3+和Er3+/Yb3+荧光粉，并对其进行了表征。采用粉末x射线衍射技术研究了晶相，傅里叶变换红外光谱识别了几个振动键的存在，扫描电镜对表面形貌进行了验证。上下转换发射光谱分别显示了377 nm和980 nm激发下2H11/2→4I15/2 （~ 521 nm）、4S3/2→4I15/2 （~ 547 nm）和4F9/2→4I15/2 （~ 658 nm）三个发射带。Yb3+离子的有效敏化提高了980 nm上转换时的绿色发射强度。GdAl3(BO3) 4:1 %Er3+/ 3% Yb3+荧光粉表现出良好的热稳定性，活化能为0.314 eV。不仅绿色led的设计潜力巨大，而且非接触式温度传感设备的设计潜力也很大。在473 K时的绝对灵敏度为0.00415 K−1，在373 K时的相对灵敏度为0.576 K−1，具有良好的热循环重复性。

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引用次数: 0

Surface-passivated (GA)xK2-xSiF6: Mn4+ organic-inorganic hybrid red phosphor: Enhanced stability and promising utilization in WLEDs 表面钝化（GA）xK2-xSiF6: Mn4+有机-无机杂化红色荧光粉：增强稳定性和在wled中的应用前景

IF 3.6 3区物理与天体物理 Q2 OPTICS

Journal of Luminescence

Pub Date : 2026-05-01 Epub Date: 2026-02-07 DOI: 10.1016/j.jlumin.2026.121785

Wenjing Han , Ying Jin , Xiaoyi Liu , Zhe Qiu , Shengda Liu , Jiayin Zhan , Jinxian Wang , Xiangting Dong , Guixia Liu

To enhance the water resistance and thermal stability of phosphors, this study adopted a dual-modification strategy based on partial substitution of K⁺ by organic guanidinium (GA⁺) to fabricate an organic–inorganic hybrid host matrix, coupled with surface passivation via thiosemicarbazide (TSC). Consequently, a red-emitting phosphor (GA)_0.6K_1.4SiF₆: 0.09Mn⁴⁺-TSC was successfully developed. Notably, partial substitution of K⁺ with GA⁺ maintained the phosphor's phase purity and increased its luminescence intensity. The TSC surface passivation enhances the water stability of the phosphor by approximately 58% while maintaining its intrinsic luminescence intensity. Additionally, the prepared phosphor demonstrated superior luminescence thermal stability, a critical prerequisite for practical lighting applications. When integrated with a commercial blue LED chip and yellow phosphor, the fabricated white light-emitting diode (WLED) achieved a color rendering index (CRI) of 90.2 and a correlated color temperature (CCT) of 3296 K, maintaining stable luminous performance even under variable-current driving conditions. These findings validate the significant application prospects of (GA)_0.6K_1.4SiF₆: 0.09Mn⁴⁺-TSC in warm WLED devices.

为了提高荧光粉的耐水性和热稳定性，本研究采用基于有机胍（GA+）部分取代K+的双改性策略制备有机-无机杂化主体基质，并通过硫脲（TSC）进行表面钝化。因此，成功地制备了一种红发荧光粉（GA）0.6K1.4SiF6: 0.09Mn4+-TSC。值得注意的是，GA+部分取代K+保持了荧光粉的相纯度并提高了其发光强度。TSC表面钝化使荧光粉的水稳定性提高了约58%，同时保持了其固有发光强度。此外，制备的荧光粉表现出优异的发光热稳定性，这是实际照明应用的关键先决条件。当与商用蓝色LED芯片和黄色荧光粉集成时，制备的白色发光二极管（WLED）显色指数（CRI）为90.2，相关色温（CCT）为3296 K，即使在变电流驱动条件下也能保持稳定的发光性能。这些发现验证了（GA）0.6K1.4SiF6: 0.09Mn4+-TSC在暖WLED器件中的重要应用前景。

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引用次数: 0