{"title":"Active and passive electronic interfaces adapted to a capacitive micromachined ultrasonic transducer (CMUT) used in acoustic energy transfer","authors":"","doi":"10.1016/j.sna.2024.115856","DOIUrl":null,"url":null,"abstract":"<div><p>Wireless power transfer is a key feature in the field of biomedical engineering. It allows a reduction of the energy storage devices in medical implants. An efficient way to safely transfer energy to medical implants is to convey ultrasounds through the body to a Capacitive Micromachined Ultrasonic Transducer (CMUT). For an application of ultrasonic energy transfer through skin, the present work compares the efficiency of two different electronic architectures to receive energy from an array of CMUT. The well known Synchronous Switch Harvesting on Inductor (SSHI) is compared in simulation to a simple impedance matching. Indeed, for an ultrasonic energy transfer, the high excitation frequency (1–8 MHz) allows the use of an inductor matching the CMUT’s clamped capacitor. The simplicity of an impedance matching circuit, its low volume and its efficiency makes it the best choice for an efficient energy transfer process to the targeted load. The CMUT model used in the simulations is a mason’s model which component values are extracted from the impedance measurement of a real device. In the end, the impedance matching is experimentally tested on this same device and compared to the simulation. A maximum 4,5 mW power is transferred to an optimal load for an input ultrasound pressure of 90 kPa.</p></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0924424724008501/pdfft?md5=6522979ccffaf63cdd3792e8b8d14a84&pid=1-s2.0-S0924424724008501-main.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424724008501","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Wireless power transfer is a key feature in the field of biomedical engineering. It allows a reduction of the energy storage devices in medical implants. An efficient way to safely transfer energy to medical implants is to convey ultrasounds through the body to a Capacitive Micromachined Ultrasonic Transducer (CMUT). For an application of ultrasonic energy transfer through skin, the present work compares the efficiency of two different electronic architectures to receive energy from an array of CMUT. The well known Synchronous Switch Harvesting on Inductor (SSHI) is compared in simulation to a simple impedance matching. Indeed, for an ultrasonic energy transfer, the high excitation frequency (1–8 MHz) allows the use of an inductor matching the CMUT’s clamped capacitor. The simplicity of an impedance matching circuit, its low volume and its efficiency makes it the best choice for an efficient energy transfer process to the targeted load. The CMUT model used in the simulations is a mason’s model which component values are extracted from the impedance measurement of a real device. In the end, the impedance matching is experimentally tested on this same device and compared to the simulation. A maximum 4,5 mW power is transferred to an optimal load for an input ultrasound pressure of 90 kPa.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...