{"title":"A novel design of a MEMS resonant accelerometer with adjustable sensitivity","authors":"","doi":"10.1016/j.sna.2024.115859","DOIUrl":null,"url":null,"abstract":"<div><p>This paper presents the design and experimental evaluation of a silicon micro-machined resonant accelerometer featuring adjustable sensitivity. By integrating an electrostatic tuning module into the fundamental accelerometer structure, dynamic sensitivity adjustment becomes feasible, leveraging the softening effect of electrostatic negative stiffness to optimize range, noise, and bandwidth. Notably, the electrostatic tuning module integrates seamlessly with the core accelerometer structure, minimizing structural alterations. Through theoretical analysis and finite element simulation of the electrostatic negative stiffness principle, we have designed a novel accelerometer with adjustable sensitivity, which can enhance the sensitivity and reduces the bias-instability of the accelerometer with a relatively small adjustment voltage, without increasing structural complexity. The performance of the accelerometer was assessed through open-loop, closed-loop, and dynamic experiments, revealing that sensitivity increased from 843 Hz/g to 2611 Hz/g within a linear range of ±1 g when employing a sensitivity-enhancing bias voltage of 9 V. Moreover, the bias-instability is lowered down from 17.3 μg to 6.8 μg. This design offers a promising avenue for sensitivity tuning in MEMS resonant accelerometers.</p></div>","PeriodicalId":21689,"journal":{"name":"Sensors and Actuators A-physical","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators A-physical","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0924424724008537","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents the design and experimental evaluation of a silicon micro-machined resonant accelerometer featuring adjustable sensitivity. By integrating an electrostatic tuning module into the fundamental accelerometer structure, dynamic sensitivity adjustment becomes feasible, leveraging the softening effect of electrostatic negative stiffness to optimize range, noise, and bandwidth. Notably, the electrostatic tuning module integrates seamlessly with the core accelerometer structure, minimizing structural alterations. Through theoretical analysis and finite element simulation of the electrostatic negative stiffness principle, we have designed a novel accelerometer with adjustable sensitivity, which can enhance the sensitivity and reduces the bias-instability of the accelerometer with a relatively small adjustment voltage, without increasing structural complexity. The performance of the accelerometer was assessed through open-loop, closed-loop, and dynamic experiments, revealing that sensitivity increased from 843 Hz/g to 2611 Hz/g within a linear range of ±1 g when employing a sensitivity-enhancing bias voltage of 9 V. Moreover, the bias-instability is lowered down from 17.3 μg to 6.8 μg. This design offers a promising avenue for sensitivity tuning in MEMS resonant accelerometers.
期刊介绍:
Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas:
• Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results.
• Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon.
• Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays.
• Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers.
Etc...