S-scheme 2D/2D B-doped N-deficient g-C3N4/ZnIn2S4 heterojunction for efficient H2 production intergrated with tertracycline degradation under visible-light illumination

Abstract

A novel S-scheme 2D/2D boron-doped nitrogen-deficient g-C₃N₄/ZnIn₂S₄ (BDCNN/ZnIn₂S₄) heterojunction was successfully fabricated via the in-situ assembly of ZnIn₂S₄ onto BDCNN in an oil bath. To assess the quality and characteristics of the synthesized photocatalysts, a comprehensive range of characterizations were conducted. The innovative S-scheme 2D/2D BDCNN/ZnIn₂S₄ heterojunction, equipped with a deliberately established inter-built electric field, facilitates rapid electron transfer and enhanced separation efficiency of photo-induced carriers. Consequently, this heterojunction demonstrates remarkable enhancements in both H₂ production and TC degradation under visible-light illumination (λ > 420 nm). The optimized BDCNN/ZnIn₂S₄ heterojunction exhibited impressive photocatalytic performance, achieving a promising H₂ evolution rate of 2378.8 μmolg⁻¹h⁻¹ and a high degradation efficiency exceeding 90 % (k = 0.021 min⁻¹) for TC. This noteworthy improvement in photocatalytic performance is primarily attributed to the synergistic effects of boron-doping and nitrogen-defects within BDCNN, coupled with the unique S-scheme photocatalytic mechanism inherent to the BDCNN/ZnIn₂S₄ heterojunction. Overall, this study introduces a groundbreaking approach for constructing 2D/2D g-C₃N₄-based heterojunctions that exhibit exceptional visible-light photocatalytic capabilities, thereby offering significant potential for various photocatalytic applications.