Photoluminescence and scintillation properties of rare earth doped Lu2O3 single crystal grown by floating zone method

Q2 Engineering Optical Materials: X Pub Date : 2024-09-10 DOI:10.1016/j.omx.2024.100357
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引用次数: 0

Abstract

A series of Lu2O3 single crystals doped with rare earth (RE) ions (RE = Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, and Yb, dopant concentrations are 1 %) was synthesized by the floating zone method. Their photoluminescence (PL) and scintillation properties were evaluated. In PL, emissions due to 4f-4f transitions of trivalent rare earth ions were observed, and those doped with Nd3+, Eu3+, Tb3+ and Er3+ showed the highest emission intensities among the samples. As a scintillation property, those doped with Eu, Gd, and Dy showed a clear photoabsorption peak under 137Cs 662 keV γ-ray irradiation. Among them, the Eu3+-doped Lu2O3 showed the highest scintillation light yield of 67000 photons/MeV. The current work conducted the first systematic study of rare earth doped Lu2O3 single crystals grown by the floating zone method.

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浮区法生长的掺稀土 Lu2O3 单晶的光致发光和闪烁特性
采用浮区法合成了一系列掺杂稀土(RE)离子(RE = Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm 和 Yb,掺杂浓度为 1%)的 Lu2O3 单晶体。对它们的光致发光(PL)和闪烁特性进行了评估。在光致发光中,观察到三价稀土离子的 4f-4f 转变引起的发射,掺杂 Nd3+、Eu3+、Tb3+ 和 Er3+ 的样品显示出最高的发射强度。在闪烁特性方面,掺杂 Eu、Gd 和 Dy 的样品在 137Cs 662 keV γ 射线照射下显示出明显的光吸收峰。其中,掺杂 Eu3+ 的 Lu2O3 闪烁光产率最高,达到 67000 光子/MeV。本次研究首次对浮区法生长的掺稀土 Lu2O3 单晶进行了系统研究。
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来源期刊
Optical Materials: X
Optical Materials: X Engineering-Electrical and Electronic Engineering
CiteScore
3.30
自引率
0.00%
发文量
73
审稿时长
91 days
期刊最新文献
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