Interfacial Defect Capture-Induced Abnormal Fluorescence Decay Lifetime of CsPbBr3 /CsPbBr3 Nanodisks

IF 4.3 2区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY Chemical Communications Pub Date : 2024-09-13 DOI:10.1039/d4cc03918a
Dandan Yang, Xuebin Zhang, Kaiye Cheng, Qin Xu, Haibo Zeng
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Abstract

We have employed a two-step temperature-controlled strategy to obtain the assembled CsPbBr3/CsPbBr3 Nanodisks. Compared with the conventional CsPbBr3 quantum dots, surface states characterizations and exciton dynamics verify that the interface defect prevents the rapid recombination of excitons and extends the fluorescence lifetime by nearly ten times.
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表面缺陷捕获诱导的铯硼溴/铯硼溴纳米盘异常荧光衰减寿命
我们采用两步温控策略获得了组装好的 CsPbBr3/CsPbBr3 纳米盘。与传统的 CsPbBr3 量子点相比,表面态表征和激子动力学验证了界面缺陷能阻止激子的快速重组,并将荧光寿命延长了近十倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Chemical Communications
Chemical Communications 化学-化学综合
CiteScore
8.60
自引率
4.10%
发文量
2705
审稿时长
1.4 months
期刊介绍: ChemComm (Chemical Communications) is renowned as the fastest publisher of articles providing information on new avenues of research, drawn from all the world''s major areas of chemical research.
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