Investigation of Magnetic and Electrical Properties of GdFeO3/Fe97Si3 Bilayer Thin Films

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-09-04 DOI:10.1007/s11664-024-11399-w

Rekha Gupta, Ravindra Kumar Kotnala, Anurag Tyagi

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Abstract

Bilayer thin films of GdFeO₃/Fe₉₇Si₃ have been synthesized by RF–magnetron sputtering at different thicknesses of GdFeO₃. A pure phase polycrystalline growth of GdFeO₃ and Fe₉₇Si₃ has been confirmed by XRD measurements. Stress-induced room-temperature magnetocrystalline anisotropy has been confirmed in all the bilayer thin films. A high magnetic moment has been induced in antiferromagnetic GdFeO₃ thin films resulting in the ferromagnetic character of all the samples. The ferromagnetic moment was found to be enhanced with increasing thickness of the GdFeO₃ layer. The maximum value of the room- temperature magnetic moment has been observed as M_s ~ 9.3 emu/ml in 170-nm-thick GdFeO₃ film. Dielectric measurements confirmed the induced magnetocapacitance due to grain boundary accumulation of charge carriers. Magnetic field control of capacitance and current–voltage measurements of these thin films represents a strong potential for the existence of magnetoelectric coupling in GdFeO₃/Fe₉₇Si₃ films. A maximum 30% rise in magnetocapacitance and a 95.6% increase in tunneling current in an applied 1-kOe magnetic field was obtained for 170-nm-thick GFO thin film. These thin films possess applications in spintronic devices due to the presence of room- temperature magnetocrystalline anisotropy and magnetic control of the electric properties.

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研究 GdFeO3/Fe97Si3 双层薄膜的磁性和电性

通过不同厚度的 GdFeO3 射频磁控溅射合成了 GdFeO3/Fe97Si3 双层薄膜。XRD 测量证实了 GdFeO3 和 Fe97Si3 的纯相多晶生长。应力诱导的室温磁晶各向异性已在所有双层薄膜中得到证实。在反铁磁性的 GdFeO3 薄膜中诱导出了高磁矩，从而使所有样品都具有铁磁性。研究发现，随着 GdFeO3 层厚度的增加，铁磁矩也会增强。在 170 纳米厚的 GdFeO3 薄膜中，室温磁矩的最大值为 Ms ~ 9.3 emu/ml。介电测量证实了电荷载流子在晶界堆积所产生的诱导磁电容。对这些薄膜的电容和电流电压测量的磁场控制表明，GdFeO3/Fe97Si3 薄膜中存在着强大的磁电耦合潜力。170 nm 厚的 GFO 薄膜在施加 1 kOe 磁场时，磁电容增加了 30%，隧道电流增加了 95.6%。由于这些薄膜具有室温磁晶各向异性和磁控制电特性，因此可应用于自旋电子器件。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.