Systematic Study of Liquid-State Interfacial Reactions Between Co and In-Sn Solders with Varying Sn Contents

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-08-29 DOI:10.1007/s11664-024-11382-5
Chao-hong Wang, Tai-yu Chang
{"title":"Systematic Study of Liquid-State Interfacial Reactions Between Co and In-Sn Solders with Varying Sn Contents","authors":"Chao-hong Wang, Tai-yu Chang","doi":"10.1007/s11664-024-11382-5","DOIUrl":null,"url":null,"abstract":"<p>This study investigated the interfacial reactions between Co and In-Sn solders, with various compositions, up to 90 at% Sn, at 350°C, with the aim of evaluating their potential for use in the solid–liquid interdiffusion (SLID) process. The results demonstrated that the reaction phases formed at the interfaces exhibited significant variations depending on the Sn content present in the In-Sn solders. For Sn content below 2 at%, the reaction phase was CoIn<sub>3</sub>. Notably, the CoIn<sub>3</sub> in the In-2 at% Sn/Co reaction exhibited a linear growth at a rate of ~ 15 <i>μ</i>m/h, which was significantly higher compared to the In/Co reaction. The accelerated growth rate could be attributed to the minor addition of Sn, which facilitated both the nucleation and growth of CoIn<sub>3</sub>. With an increase in Sn content to 2.5–3.5 at%, the dominant reaction phase shifted to Co(In,Sn)<sub>2</sub>, but its growth was significantly hindered. With a further increase in Sn content within the range of 4–35 at%, the irregular Co(Sn,In) phase became dominant. However, as the Sn content exceeded 36 at% and extended up to 90 at%, the Co(Sn,In)<sub>2</sub> phase remained stable at the interface, and its growth decreased significantly with increasing Sn content. The observed shift in the reaction phases is closely related to the local phase equilibrium. The suggested phase diagram of Co-In-Sn system was proposed to further understand the relationship between interfacial reaction and phase equilibrium. The Sn content of In-Sn solders not only influenced the formed reaction phase but also the growth rates and microstructures. Careful control of Sn content is crucial for the SLID process of In-Sn/Co system.</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11664-024-11382-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This study investigated the interfacial reactions between Co and In-Sn solders, with various compositions, up to 90 at% Sn, at 350°C, with the aim of evaluating their potential for use in the solid–liquid interdiffusion (SLID) process. The results demonstrated that the reaction phases formed at the interfaces exhibited significant variations depending on the Sn content present in the In-Sn solders. For Sn content below 2 at%, the reaction phase was CoIn3. Notably, the CoIn3 in the In-2 at% Sn/Co reaction exhibited a linear growth at a rate of ~ 15 μm/h, which was significantly higher compared to the In/Co reaction. The accelerated growth rate could be attributed to the minor addition of Sn, which facilitated both the nucleation and growth of CoIn3. With an increase in Sn content to 2.5–3.5 at%, the dominant reaction phase shifted to Co(In,Sn)2, but its growth was significantly hindered. With a further increase in Sn content within the range of 4–35 at%, the irregular Co(Sn,In) phase became dominant. However, as the Sn content exceeded 36 at% and extended up to 90 at%, the Co(Sn,In)2 phase remained stable at the interface, and its growth decreased significantly with increasing Sn content. The observed shift in the reaction phases is closely related to the local phase equilibrium. The suggested phase diagram of Co-In-Sn system was proposed to further understand the relationship between interfacial reaction and phase equilibrium. The Sn content of In-Sn solders not only influenced the formed reaction phase but also the growth rates and microstructures. Careful control of Sn content is crucial for the SLID process of In-Sn/Co system.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
不同锡含量的 Co 和 In-Sn 焊料之间液态界面反应的系统研究
本研究调查了各种成分的钴和铟硒焊料在 350°C 温度下的界面反应,其中铟硒焊料中的锡含量最高达 90%,目的是评估它们在固液互渗 (SLID) 工艺中的应用潜力。结果表明,界面上形成的反应相随铟硒焊料中锡含量的不同而有显著变化。当锡含量低于 2% 时,反应相为 CoIn3。值得注意的是,在 In-2 at% 锡/钴反应中,CoIn3 以 ~ 15 μm/h 的速度线性增长,与 In/Co 反应相比明显更高。生长速度加快的原因可能是少量添加了 Sn,从而促进了 CoIn3 的成核和生长。随着 Sn 含量增加到 2.5-3.5 at%,主要反应相转向 Co(In,Sn)2,但其生长明显受阻。随着锡含量在 4-35 at% 的范围内进一步增加,不规则的 Co(Sn,In) 相成为主导相。然而,当锡含量超过 36% 并扩展到 90% 时,Co(Sn,In)2 相在界面上保持稳定,其生长随着锡含量的增加而显著下降。所观察到的反应相的转变与局部相平衡密切相关。为进一步理解界面反应与相平衡之间的关系,提出了 Co-In-Sn 体系的相图建议。铟硒焊料中的锡含量不仅影响已形成的反应相,还影响生长速率和微观结构。谨慎控制锡含量对 In-Sn/Co 体系的 SLID 过程至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
期刊最新文献
Factors Influencing Standard PID Test and Anti-PID Performance of Ga-Doped PERC Mono-Facial Photovoltaic Modules Enhanced Microwave Magnetic and Dielectric Properties of YBiIG Ferrite by Ca-Zr Co-substitution Structural, Optical, and Magnetic Studies of Nickel-Doped β-Ga2O3 Monoclinic and Spinel Polycrystalline Powders Effect of Epoxy Material Viscosity and Gold Wire Configuration on Light-Emitting Diode Encapsulation Process Synthesis and Characterization of Sn-Doped CuO Thin Films for Gas Sensor Toward H2S Gas Sensing
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1