A. A. Koryakin, Yu. A. Eremeev, S. V. Fedina, V. V. Fedorov
{"title":"Growth Mechanism of Monolayer on the Top Facet of Ga-Catalyzed GaAs and GaP Nanowires","authors":"A. A. Koryakin, Yu. A. Eremeev, S. V. Fedina, V. V. Fedorov","doi":"10.1134/s1063785023170133","DOIUrl":null,"url":null,"abstract":"<p><b>Abstract</b>—The growth mechanism of monolayer on the top facet of Ga-catalyzed GaAs and GaP nanowires is investigated. Within the framework of a theoretical model, the maximal monolayer coverage due to the material in the catalyst droplet, the nanowire growth rate and the content of group V atoms in the droplet are found depending on the growth conditions. The estimates of the phosphorus re-evaporation coefficient from neighboring nanowires and substrate are obtained by comparing the theoretical and experimental growth rate of Ga-catalyzed GaP nanowires.</p>","PeriodicalId":784,"journal":{"name":"Technical Physics Letters","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1134/s1063785023170133","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract—The growth mechanism of monolayer on the top facet of Ga-catalyzed GaAs and GaP nanowires is investigated. Within the framework of a theoretical model, the maximal monolayer coverage due to the material in the catalyst droplet, the nanowire growth rate and the content of group V atoms in the droplet are found depending on the growth conditions. The estimates of the phosphorus re-evaporation coefficient from neighboring nanowires and substrate are obtained by comparing the theoretical and experimental growth rate of Ga-catalyzed GaP nanowires.
期刊介绍：
Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
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