Junction temperature monitoring of silicon carbide MOSFET based on turn‐off voltage spike

IF 1.8 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC International Journal of Circuit Theory and Applications Pub Date : 2024-08-26 DOI:10.1002/cta.4245

Xinbo Liu, Bo Liu, Shuiyuan He, Lijian Diao, Lijun Diao

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Abstract

Because of the advantages of high switching speed, silicon carbide (SiC) devices are widely used in high‐power power electronic equipment. Real‐time monitoring of junction temperature is very important for the safe operation of equipment. There have been many studies on traditional junction temperature monitoring methods based on Si IGBT, but the dynamic characteristics of SiC MOSFETs are changed due to their different physical structure and parasitic parameters, which make the traditional methods no longer applicable. In this paper, the junction temperature can be extracted from the switching process of SiC MOSFET by using the turn‐off voltage spike as the index of thermosensitive electrical parameter (TSEP). In addition, the effect of working voltage, current, and different materials on turn‐off voltage spike is also studied. The simulation platform of Ansys/Simplorer and the experimental test platforms are built, and the theory of junction temperature detection based on turn‐off voltage spike is verified. The simulation and experimental results show that turn‐off voltage spike is a feasible TSEP, which can be used to extract junction temperature of SiC MOSFET with good linearity and instantaneity.

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基于关断电压尖峰的碳化硅 MOSFET 结温监测

由于具有开关速度高的优点，碳化硅（SiC）器件被广泛应用于大功率电力电子设备中。结温的实时监测对设备的安全运行非常重要。基于 Si IGBT 的传统结温监测方法已有很多研究，但由于 SiC MOSFET 的物理结构和寄生参数不同，其动态特性也发生了变化，这使得传统方法不再适用。本文利用关断电压尖峰作为热敏电参数（TSEP）的指标，可以从 SiC MOSFET 的开关过程中提取结温。此外，还研究了工作电压、电流和不同材料对关断电压尖峰的影响。建立了 Ansys/Simplorer 仿真平台和实验测试平台，验证了基于关断电压尖峰的结温检测理论。仿真和实验结果表明，关断电压尖峰是一种可行的 TSEP，可用于提取 SiC MOSFET 的结温，且具有良好的线性和瞬时性。

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来源期刊

International Journal of Circuit Theory and Applications 工程技术-工程：电子与电气

CiteScore

3.60

自引率

34.80%

发文量

277

审稿时长

4.5 months

期刊介绍： The scope of the Journal comprises all aspects of the theory and design of analog and digital circuits together with the application of the ideas and techniques of circuit theory in other fields of science and engineering. Examples of the areas covered include: Fundamental Circuit Theory together with its mathematical and computational aspects; Circuit modeling of devices; Synthesis and design of filters and active circuits; Neural networks; Nonlinear and chaotic circuits; Signal processing and VLSI; Distributed, switched and digital circuits; Power electronics; Solid state devices. Contributions to CAD and simulation are welcome.