Switchable Crystalline Islands in Super Lubricant Arrays

Youngki Yeo, Yoav Sharaby, Nirmal Roy, Noam Raab, Watanabe Kenji, Takashi Taniguchi, Moshe Ben Shalom
{"title":"Switchable Crystalline Islands in Super Lubricant Arrays","authors":"Youngki Yeo, Yoav Sharaby, Nirmal Roy, Noam Raab, Watanabe Kenji, Takashi Taniguchi, Moshe Ben Shalom","doi":"arxiv-2409.07225","DOIUrl":null,"url":null,"abstract":"Expanding the performance of field effect devices is a key challenge of the\never-growing chip industry at the core of current technologies. A highly\ndesired nonvolatile response in tiny multiferroic transistors is expected by\nelectric field control of atomic movements rather than the typical electronic\nredistribution. Recently, such field effect control of structural transitions\nwas established in commensurate stacking configurations of honeycomb van der\nWaals (vdW) polytypes by sliding narrow boundary dislocations between\noppositely polarized domains. The interfacial ferroelectric response, however,\nrelied on preexisting boundary strips between relatively large micron-scale\ndomains, severely limiting practical implementations. Here, we report the\nrobust switching of single-domain polytypes in nm-scale islands embedded in\nsuper lubricant vdW arrays. We etch cavities into a thin layered spacer and\nthen encapsulate it with parallel functional flakes. The incommensurate flakes\nabove and under the spacer sag and touch at each cavity to form uniform\ncrystalline islands free from interlayer deformations. By imaging the\npolytypes' ferroelectric response, we observe reversible nucleation and\nannihilation of boundary strips and geometry-adaptable hysteresis loops. Using\nmechanical stress, we accurately position the boundary strip, modify the\ninterlayer twist angle, and nucleate intermediate polar domain patterns. By\nprecisely designing the size, shape, symmetry, and distribution of the islands\nin these Super Lubricant Arrays of Polytype (SLAP), we envision numerous device\nfunctionalities and SlideTronics applications. These range from ultra-sensitive\ndetectors of atomic-scale shifts to nonvolatile multi-ferroic tunneling\ntransistors with tunable coercive switching fields, and even\nelastically-coupled memory cells for neuromorphic architectures.","PeriodicalId":501211,"journal":{"name":"arXiv - PHYS - Other Condensed Matter","volume":"50 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Other Condensed Matter","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.07225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Expanding the performance of field effect devices is a key challenge of the ever-growing chip industry at the core of current technologies. A highly desired nonvolatile response in tiny multiferroic transistors is expected by electric field control of atomic movements rather than the typical electronic redistribution. Recently, such field effect control of structural transitions was established in commensurate stacking configurations of honeycomb van der Waals (vdW) polytypes by sliding narrow boundary dislocations between oppositely polarized domains. The interfacial ferroelectric response, however, relied on preexisting boundary strips between relatively large micron-scale domains, severely limiting practical implementations. Here, we report the robust switching of single-domain polytypes in nm-scale islands embedded in super lubricant vdW arrays. We etch cavities into a thin layered spacer and then encapsulate it with parallel functional flakes. The incommensurate flakes above and under the spacer sag and touch at each cavity to form uniform crystalline islands free from interlayer deformations. By imaging the polytypes' ferroelectric response, we observe reversible nucleation and annihilation of boundary strips and geometry-adaptable hysteresis loops. Using mechanical stress, we accurately position the boundary strip, modify the interlayer twist angle, and nucleate intermediate polar domain patterns. By precisely designing the size, shape, symmetry, and distribution of the islands in these Super Lubricant Arrays of Polytype (SLAP), we envision numerous device functionalities and SlideTronics applications. These range from ultra-sensitive detectors of atomic-scale shifts to nonvolatile multi-ferroic tunneling transistors with tunable coercive switching fields, and even elastically-coupled memory cells for neuromorphic architectures.
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超级润滑剂阵列中的可切换晶岛
提高场效应器件的性能是不断发展的芯片产业面临的一项关键挑战,也是当前技术的核心。人们期望通过电场对原子运动的控制,而不是典型的电子分布,在微小的多铁晶体管中实现非常理想的非易失性响应。最近,在蜂窝状范德瓦尔斯(vdW)多晶型的相称堆叠配置中,通过在相反极化畴之间滑动窄边界位错,建立了这种结构转换的场效应控制。然而,界面铁电响应依赖于相对较大的微米尺度畴之间预先存在的边界条带,这严重限制了实际应用。在此,我们报告了嵌入超级润滑剂 vdW 阵列的纳米级岛屿中单域多类型的稳健切换。我们在薄层间隔物中蚀刻出空腔,然后用平行功能片封装。间隔层上和间隔层下不相称的薄片在每个空腔处下垂并接触,形成均匀的晶体岛,而不会产生层间变形。通过对多晶型铁电响应的成像,我们观察到边界条带的可逆成核和湮灭,以及几何形状可适应的滞后环。利用机械应力,我们准确定位了边界条带,改变了层间扭转角,并核化了中间极域模式。通过精确设计这些聚类超级润滑剂阵列(SLAP)中岛屿的大小、形状、对称性和分布,我们设想了许多设备功能和 SlideTronics 应用。这些应用包括原子尺度位移的超灵敏探测器、具有可调强制开关场的非易失性多铁素体隧道晶体管,甚至是用于神经形态架构的弹性耦合存储单元。
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