THz Second and Third Harmonic Generation in PdCoO$_2$ Thin Films

T. Priessnitz, L. Feng, T. V. A. G. de Oliveira, G. Baker, I. Ilyakov, A. Ponomaryov, A. Arshad, G. L. Prajapati, J. -C. Deinert, S. Kovalev, B. Keimer, S. Kaiser
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Abstract

Terahertz high harmonic generation (THz HHG) is a common property of nonlinear systems. Recently it has been used to investigate fundamental principles that govern transport and nonlinear dynamics in novel quantum materials like graphene, Dirac semimetals or high-temperature superconductors. Here, we report on the observation of exceptionally large THz second harmonic and third harmonic generation in thin films of the highly conducting delafossite PdCoO$_2$ down to low temperatures. The growth of this material on offcut substrate allows for a significant enhancement of the third harmonic intensity compared to ordinary $c$-axis grown thin films. Furthermore, it appears to be a necessity for the observation of THz second harmonic generation. We model the temperature dependence of the third harmonic generation by means of Boltzmann transport theory and provide an explanation for the second harmonic generation by comparing the system to the electric field induced second harmonic generation. The present investigation thus provides an important contribution to the ongoing discussion of low temperature origins of THz HHG and might serve as a new platform for THz high harmonic applications.
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PdCoO$_2$ 薄膜中的太赫兹二次谐波和三次谐波生成
太赫兹高次谐波发生(THz HHG)是非线性系统的一种常见特性。最近,它已被用于研究新型量子材料(如石墨烯、狄拉克半金属或高温超导体)的传输和非线性动力学的基本原理。在这里,我们报告了在低温下观察到的高导电性硒化钴钯薄膜中产生的超大太赫兹二次谐波和三次谐波。与普通的 c$ 轴生长的薄膜相比,这种材料在非切割基底上的生长使得三次谐波强度显著增强。此外,它似乎也是观测太赫兹二次谐波生成的必要条件。我们通过玻尔兹曼输运理论建立了三次谐波产生的温度依赖性模型,并通过将该系统与电场诱导的二次谐波产生进行比较,为二次谐波的产生提供了解释。因此,本研究为正在进行的太赫兹高次谐波的低温起源讨论做出了重要贡献,并可能成为太赫兹高次谐波应用的新平台。
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