A simulation for surface acoustic waves driven electron transport in perspective of electrical potential

Abstract

Surface acoustic waves (SAWs) have been utilized as a platform for single-electron transistors. When superposed with the split-gate potential, propagating SAWs create moving potential wells. We demonstrate the total potential landscape using the Laplace equation and apply the one-dimensional time-independent Schrödinger equation to determine the conditions necessary for single-electron transport. Our findings reveal that the ratio between the SAW amplitude and the split-gate voltage varies with the SAW wavelength and the absolute value of the gate voltage. We propose essential conditions for single-electron transport based on the ratios derived from our calculations, which can be applied to other material systems.