Displacement analysis in three configurations of Si0.5Ge0.5/Si junctionless gate-all-around FET: a study from device to binary and ternary circuit applications
Neda Ghoreishi, Keivan Navi, Reza Sabbaghi-Nadooshan, Mohammad Esmaeldoust
{"title":"Displacement analysis in three configurations of Si0.5Ge0.5/Si junctionless gate-all-around FET: a study from device to binary and ternary circuit applications","authors":"Neda Ghoreishi, Keivan Navi, Reza Sabbaghi-Nadooshan, Mohammad Esmaeldoust","doi":"10.1007/s40042-024-01159-8","DOIUrl":null,"url":null,"abstract":"<div><p>This article investigates the performance of a 14 nm gate length heterostructure Si<sub>0.5</sub>Ge<sub>0.5</sub>/Si junctionless gate-all-around (SiGe-JLGAA) device employing SILVACO ATLAS 3D simulator. The proposed device is analyzed in three configurations: underlap, fit, and overlap, and they are compared to a conventional entire region silicon JLGAA structure. First, the choice of <i>x</i> = 0.5 for Ge molar fraction and the device’s physical behavior for all states are discussed. Second, many analog/radio frequency (RF) figures of merit (FoMs) in terms of transconductance (<i>g</i><sub>m</sub>), gate-to-gate capacitance (<i>C</i><sub>GG</sub>), cutoff frequency (<i>f</i><sub>T</sub>), gain bandwidth product (GBP), transit time (<i>τ</i>), and transconductance frequency product (TFP) are investigated. The fit configuration SiGe-JLGAA device demonstrates <i>g</i><sub>m</sub> = 67.4 µS, <i>f</i><sub>T</sub> = 1033 GHz, GBP = 115 GHz, TFP = 4.2 THz/V and <i>τ</i> = 1.3 × 10<sup>13</sup> s, whereas the corresponding values for a conventional device are 13.5 µS, 354 GHz, 37 GHz, 1.2 THz/V and 5.9 × 10<sup>13</sup> s, respectively. In addition, the reliability of the proposed device in terms of linearity for the three forms is compared. Finally, using a Verilog-A model in Cadence tool, the applications of the SiGe-JLGAA device in designing two types of inverters, binary and ternary, are demonstrated. The fit form exhibits superior DC and transient characteristics compared to other structures. The proposed device significantly enhances all configurations compared to the conventional JLGAA structure, thereby opening up a wide range of applications in digital circuits.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"85 8","pages":"650 - 660"},"PeriodicalIF":0.8000,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Korean Physical Society","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s40042-024-01159-8","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
This article investigates the performance of a 14 nm gate length heterostructure Si0.5Ge0.5/Si junctionless gate-all-around (SiGe-JLGAA) device employing SILVACO ATLAS 3D simulator. The proposed device is analyzed in three configurations: underlap, fit, and overlap, and they are compared to a conventional entire region silicon JLGAA structure. First, the choice of x = 0.5 for Ge molar fraction and the device’s physical behavior for all states are discussed. Second, many analog/radio frequency (RF) figures of merit (FoMs) in terms of transconductance (gm), gate-to-gate capacitance (CGG), cutoff frequency (fT), gain bandwidth product (GBP), transit time (τ), and transconductance frequency product (TFP) are investigated. The fit configuration SiGe-JLGAA device demonstrates gm = 67.4 µS, fT = 1033 GHz, GBP = 115 GHz, TFP = 4.2 THz/V and τ = 1.3 × 1013 s, whereas the corresponding values for a conventional device are 13.5 µS, 354 GHz, 37 GHz, 1.2 THz/V and 5.9 × 1013 s, respectively. In addition, the reliability of the proposed device in terms of linearity for the three forms is compared. Finally, using a Verilog-A model in Cadence tool, the applications of the SiGe-JLGAA device in designing two types of inverters, binary and ternary, are demonstrated. The fit form exhibits superior DC and transient characteristics compared to other structures. The proposed device significantly enhances all configurations compared to the conventional JLGAA structure, thereby opening up a wide range of applications in digital circuits.
期刊介绍:
The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.