Displacement analysis in three configurations of Si0.5Ge0.5/Si junctionless gate-all-around FET: a study from device to binary and ternary circuit applications

IF 0.8 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY Journal of the Korean Physical Society Pub Date : 2024-08-13 DOI:10.1007/s40042-024-01159-8
Neda Ghoreishi, Keivan Navi, Reza Sabbaghi-Nadooshan, Mohammad Esmaeldoust
{"title":"Displacement analysis in three configurations of Si0.5Ge0.5/Si junctionless gate-all-around FET: a study from device to binary and ternary circuit applications","authors":"Neda Ghoreishi,&nbsp;Keivan Navi,&nbsp;Reza Sabbaghi-Nadooshan,&nbsp;Mohammad Esmaeldoust","doi":"10.1007/s40042-024-01159-8","DOIUrl":null,"url":null,"abstract":"<div><p>This article investigates the performance of a 14 nm gate length heterostructure Si<sub>0.5</sub>Ge<sub>0.5</sub>/Si junctionless gate-all-around (SiGe-JLGAA) device employing SILVACO ATLAS 3D simulator. The proposed device is analyzed in three configurations: underlap, fit, and overlap, and they are compared to a conventional entire region silicon JLGAA structure. First, the choice of <i>x</i> = 0.5 for Ge molar fraction and the device’s physical behavior for all states are discussed. Second, many analog/radio frequency (RF) figures of merit (FoMs) in terms of transconductance (<i>g</i><sub>m</sub>), gate-to-gate capacitance (<i>C</i><sub>GG</sub>), cutoff frequency (<i>f</i><sub>T</sub>), gain bandwidth product (GBP), transit time (<i>τ</i>), and transconductance frequency product (TFP) are investigated. The fit configuration SiGe-JLGAA device demonstrates <i>g</i><sub>m</sub> = 67.4 µS, <i>f</i><sub>T</sub> = 1033 GHz, GBP = 115 GHz, TFP = 4.2 THz/V and <i>τ</i> = 1.3 × 10<sup>13</sup> s, whereas the corresponding values for a conventional device are 13.5 µS, 354 GHz, 37 GHz, 1.2 THz/V and 5.9 × 10<sup>13</sup> s, respectively. In addition, the reliability of the proposed device in terms of linearity for the three forms is compared. Finally, using a Verilog-A model in Cadence tool, the applications of the SiGe-JLGAA device in designing two types of inverters, binary and ternary, are demonstrated. The fit form exhibits superior DC and transient characteristics compared to other structures. The proposed device significantly enhances all configurations compared to the conventional JLGAA structure, thereby opening up a wide range of applications in digital circuits.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Korean Physical Society","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s40042-024-01159-8","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

This article investigates the performance of a 14 nm gate length heterostructure Si0.5Ge0.5/Si junctionless gate-all-around (SiGe-JLGAA) device employing SILVACO ATLAS 3D simulator. The proposed device is analyzed in three configurations: underlap, fit, and overlap, and they are compared to a conventional entire region silicon JLGAA structure. First, the choice of x = 0.5 for Ge molar fraction and the device’s physical behavior for all states are discussed. Second, many analog/radio frequency (RF) figures of merit (FoMs) in terms of transconductance (gm), gate-to-gate capacitance (CGG), cutoff frequency (fT), gain bandwidth product (GBP), transit time (τ), and transconductance frequency product (TFP) are investigated. The fit configuration SiGe-JLGAA device demonstrates gm = 67.4 µS, fT = 1033 GHz, GBP = 115 GHz, TFP = 4.2 THz/V and τ = 1.3 × 1013 s, whereas the corresponding values for a conventional device are 13.5 µS, 354 GHz, 37 GHz, 1.2 THz/V and 5.9 × 1013 s, respectively. In addition, the reliability of the proposed device in terms of linearity for the three forms is compared. Finally, using a Verilog-A model in Cadence tool, the applications of the SiGe-JLGAA device in designing two types of inverters, binary and ternary, are demonstrated. The fit form exhibits superior DC and transient characteristics compared to other structures. The proposed device significantly enhances all configurations compared to the conventional JLGAA structure, thereby opening up a wide range of applications in digital circuits.

Abstract Image

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Si0.5Ge0.5/Si 无结全栅极场效应晶体管三种配置的位移分析:从器件到二元和三元电路应用的研究
本文利用 SILVACO ATLAS 3D 仿真器研究了栅长为 14 nm 的异质结构 Si0.5Ge0.5/Si 无结全栅极(SiGe-JLGAA)器件的性能。分析了拟议器件的三种配置:欠隙、贴合和重叠,并将它们与传统的全区硅 JLGAA 结构进行了比较。首先,讨论了 Ge 摩尔分数 x = 0.5 的选择以及器件在所有状态下的物理行为。其次,从跨导(gm)、栅极到栅极电容(CGG)、截止频率(fT)、增益带宽乘积(GBP)、传输时间(τ)和跨导频率乘积(TFP)等方面研究了许多模拟/射频(RF)优越性指标(FoM)。拟合配置的 SiGe-JLGAA 器件的 gm = 67.4 µS、fT = 1033 GHz、GBP = 115 GHz、TFP = 4.2 THz/V、τ = 1.3 × 1013 s,而传统器件的相应值分别为 13.5 µS、354 GHz、37 GHz、1.2 THz/V 和 5.9 × 1013 s。此外,还比较了三种形式的拟议器件在线性方面的可靠性。最后,利用 Cadence 工具中的 Verilog-A 模型,演示了 SiGe-JLGAA 器件在设计二元和三元两种逆变器中的应用。与其他结构相比,这种拟合形式表现出卓越的直流和瞬态特性。与传统的 JLGAA 结构相比,拟议的器件大大增强了所有配置,从而为数字电路开辟了广泛的应用领域。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of the Korean Physical Society
Journal of the Korean Physical Society PHYSICS, MULTIDISCIPLINARY-
CiteScore
1.20
自引率
16.70%
发文量
276
审稿时长
5.5 months
期刊介绍: The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.
期刊最新文献
Erratum: Comparative analysis of single and triple material 10 nm Tri-gate FinFET Revisit to the fluid Love numbers and the permanent tide of the Earth Dictionary learning-based denoising algorithm with expected patch log likelihood in diffusion-weighted magnetic resonance image Synthesis and characterization of Fe-doped ZnO films for enhanced NO2 gas-sensing applications Quantum discord in the early universe with non-trivial sound speed
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1