Structural Analysis and Electrical Property of Acid‐Treated MWCNT

IF 1.6 4区化学 Q4 CHEMISTRY, PHYSICAL Surface and Interface Analysis Pub Date : 2024-08-29 DOI:10.1002/sia.7353

Jaekwang Lee, Hyunwoo Lim, Joo‐yeon Ha, Seungjae Lee, Heesoo Lee

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Abstract

The electrical properties of acid‐treated CNT were investigated in terms of functional group and microstructure. A mixture of HNO3 and H2SO4 was used to acid treatment of CNT, and acid‐treated CNTs were synthesized by the mixture for 0 to 5 h. In crystal structure analysis, as acid treatment time was increased, the intensity of graphite diffraction peak was decreased and shifted to lower angle. It indicates a decrease in the crystallinity of CNT surface and lattice contraction by loss of carbon atoms. The distribution of oxygen on CNT surface was observed by TEM analysis confirming that functional groups and structural defects were formed. ID/IG ratio and average distance between defects (LD) were calculated using Raman spectroscopy to analyze the structural characteristics of CNT, and the greatest decrease was identified from p‐CNT to 2h‐CNT, resulting in the formation of functional groups and the changes in structural defects on CNT surface by acid treatment in the initial stage. Bonding state on CNT surface was analyzed through XPS analysis, and functional groups such as CO and COH were confirmed in acid‐treated CNT. Sheet resistance was measured to analyze the electrical properties of CNT, and 3h‐CNT showed the lowest sheet resistance at 25.28 Ω.

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酸处理 MWCNT 的结构分析和电学特性

从官能团和微观结构方面研究了酸处理 CNT 的电学特性。在晶体结构分析中，随着酸处理时间的延长，石墨衍射峰的强度降低并向低角度移动。这表明 CNT 表面的结晶度降低，碳原子流失导致晶格收缩。通过 TEM 分析观察了 CNT 表面的氧分布，证实形成了官能团和结构缺陷。利用拉曼光谱计算了 ID/IG 比和缺陷间平均距离（LD），分析了 CNT 的结构特征，发现从 p-CNT 到 2h-CNT 的降幅最大，这是因为 CNT 表面在初始阶段经酸处理后形成了官能团并改变了结构缺陷。通过 XPS 分析了 CNT 表面的键合状态，确认了酸处理 CNT 中的 CO 和 COH 等官能团。通过测量薄层电阻来分析 CNT 的电学特性，结果表明 3h-CNT 的薄层电阻最低，为 25.28 Ω。

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来源期刊

Surface and Interface Analysis 化学-物理化学

CiteScore

3.30

自引率

5.90%

发文量

130

审稿时长

4.4 months

期刊介绍： Surface and Interface Analysis is devoted to the publication of papers dealing with the development and application of techniques for the characterization of surfaces, interfaces and thin films. Papers dealing with standardization and quantification are particularly welcome, and also those which deal with the application of these techniques to industrial problems. Papers dealing with the purely theoretical aspects of the technique will also be considered. Review articles will be published; prior consultation with one of the Editors is advised in these cases. Papers must clearly be of scientific value in the field and will be submitted to two independent referees. Contributions must be in English and must not have been published elsewhere, and authors must agree not to communicate the same material for publication to any other journal. Authors are invited to submit their papers for publication to John Watts (UK only), Jose Sanz (Rest of Europe), John T. Grant (all non-European countries, except Japan) or R. Shimizu (Japan only).