Rui Su, Yuheng Deng, Weichao Jiang, Yufeng Duan, Runqing Zhang, Ruizi Xiao, Chenglin Shen, Mingxing Gong, Weiming Cheng, Jingping Xu, Peter To Lai, Xiangshui Miao
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引用次数: 0
Abstract
This study examines the impact of the contact interface on metal/oxide/metal memristors using SrFeOx (SFO) as the oxide layer. Two methods were used to prepare the Au top electrode: electron beam evaporation and a transfer process. The transfer process was found to reduce oxygen ion migration at the Au/SFO interface by eliminating surface damage caused by gold atoms during evaporation. As a result, the memristor’s ON/OFF current ratio improved from 25 to 4000, and resistance dispersion decreased from 32.4% to 3.8%. The memristor also achieved 91.5% accuracy in the VGG16 network for CIFAR-10 image recognition.
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