Katharina Peh, Dominik Bratek, Kevin Lauer, Robin Lars Benedikt Müller, Dirk Schulze, Aaron Flötotto, Stefan Krischok
{"title":"Light‐Induced Degradation Transition Energy Barrier Measured by Photoluminescence Spectra in Si:In","authors":"Katharina Peh, Dominik Bratek, Kevin Lauer, Robin Lars Benedikt Müller, Dirk Schulze, Aaron Flötotto, Stefan Krischok","doi":"10.1002/pssa.202400570","DOIUrl":null,"url":null,"abstract":"The impact of light‐induced degradation (LID) treatments is investigated using low‐temperature photoluminescence in Si:In. A feature called as the P‐line, located at 1.118 eV, provides information on the decisive energy barrier for the LID effect. The intensity of the P‐line can be reproducibly influenced by illumination and annealing treatments. The decay of the P‐line after quenching, illumination, and moderate annealing of the silicon samples is measured as function of time and annealing temperature. Both indium‐doped as‐grown Czochralski and indium implanted float‐zone silicon wafers are examined and their behavior is compared. Based on these measurements, an energy barrier for the P‐line defect transition is calculated. The LID defect model is used to discuss the results.","PeriodicalId":20074,"journal":{"name":"Physica Status Solidi A-applications and Materials Science","volume":null,"pages":null},"PeriodicalIF":1.9000,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi A-applications and Materials Science","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/pssa.202400570","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The impact of light‐induced degradation (LID) treatments is investigated using low‐temperature photoluminescence in Si:In. A feature called as the P‐line, located at 1.118 eV, provides information on the decisive energy barrier for the LID effect. The intensity of the P‐line can be reproducibly influenced by illumination and annealing treatments. The decay of the P‐line after quenching, illumination, and moderate annealing of the silicon samples is measured as function of time and annealing temperature. Both indium‐doped as‐grown Czochralski and indium implanted float‐zone silicon wafers are examined and their behavior is compared. Based on these measurements, an energy barrier for the P‐line defect transition is calculated. The LID defect model is used to discuss the results.
我们利用硅铟（Si:In）的低温光致发光研究了光诱导降解（LID）处理的影响。位于 1.118 eV 的 P 线特征提供了有关 LID 效应决定性能障的信息。P 线的强度会受到照明和退火处理的影响。硅样品经过淬火、光照和适度退火后，P 线的衰减是时间和退火温度的函数。研究了掺铟的原生长 Czochralski 硅片和铟植入浮区硅片，并对它们的行为进行了比较。根据这些测量结果，计算出了 P 线缺陷转变的能量势垒。讨论结果时使用了 LID 缺陷模型。
期刊介绍：
The physica status solidi (pss) journal group is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Among the largest and most established international publications, the pss journals publish reviews, letters and original articles, as regular content as well as in special issues and topical sections.
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