Temperature‐Induced Transformation of the Atomic Configuration of the BO2* Defect in Boron‐Doped Czochralski Si

Abstract

In this study, the new data concerning the electronic and vibrational properties of the BsO2i* defect in Czochralski‐grown boron‐doped silicon are reported. In silicon subjected to treatment at elevated temperatures, a new boron‐related defect is detected. An additional intracenter electronic transition for boron associated with the revealed defect is observed. The defect is identified as BsO2i due to the linear dependence of its formation efficiency on the boron content and the quadratic dependence on the oxygen concentration. The revealed complex is formed synchronously with the annealing of the previously identified BsO2i* defect. The detected complex is formed as a result of temperature transformation of the atomic configuration of the BsO2i* defect. The transformation occurs with activation energy of 2.59 eV. The local vibrational modes associated with both configurations of the BsO2i* complex are identified. The results of the study suggest that the BsO2i* defect in both configurations exists in a wide temperature interval, impacts the optical and electronic properties of the material, and must be taken into consideration when developing Si:B‐based devices.