N. A. Djuzhev, E. E. Gusev, M. Yu. Fomichev, P. S. Ivanin
{"title":"Technology for Manufacturing TSV Structures for the Creation of Silicon Interposers Using Temporary-Bonding Technology","authors":"N. A. Djuzhev, E. E. Gusev, M. Yu. Fomichev, P. S. Ivanin","doi":"10.1134/S2635167624600408","DOIUrl":null,"url":null,"abstract":"<p>For the first time in Russia, we present a technology for temporary wafer bonding, which is used to form through holes in silicon (through-silica via (TSV) structures) with a high aspect ratio of depth to diameter (more than 10 to 1), as well as a method for transferring alignment marks from the front to the back side of a thin Si wafer, consisting in the use of a glass carrier plate, which allows for a sufficient amount of deflection of the assembly for lithography. The modernized operating parameters of Si-glass bonding, which consist in controlling the cooling rate of the plates and applying pressure to the plates during their cooling phase, ensure a reduction in the deflection of the resulting assembly by 75% before thinning and by 65% after thinning to a residual thickness of 125 μm while maintaining the mechanical integrity of the plates.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":null,"pages":null},"PeriodicalIF":0.8000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnologies in Russia","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S2635167624600408","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
For the first time in Russia, we present a technology for temporary wafer bonding, which is used to form through holes in silicon (through-silica via (TSV) structures) with a high aspect ratio of depth to diameter (more than 10 to 1), as well as a method for transferring alignment marks from the front to the back side of a thin Si wafer, consisting in the use of a glass carrier plate, which allows for a sufficient amount of deflection of the assembly for lithography. The modernized operating parameters of Si-glass bonding, which consist in controlling the cooling rate of the plates and applying pressure to the plates during their cooling phase, ensure a reduction in the deflection of the resulting assembly by 75% before thinning and by 65% after thinning to a residual thickness of 125 μm while maintaining the mechanical integrity of the plates.
期刊介绍：
Nanobiotechnology Reports publishes interdisciplinary research articles on fundamental aspects of the structure and properties of nanoscale objects and nanomaterials, polymeric and bioorganic molecules, and supramolecular and biohybrid complexes, as well as articles that discuss technologies for their preparation and processing, and practical implementation of products, devices, and nature-like systems based on them. The journal publishes original articles and reviews that meet the highest scientific quality standards in the following areas of science and technology studies: self-organizing structures and nanoassemblies; nanostructures, including nanotubes; functional and structural nanomaterials; polymeric, bioorganic, and hybrid nanomaterials; devices and products based on nanomaterials and nanotechnology; nanobiology and genetics, and omics technologies; nanobiomedicine and nanopharmaceutics; nanoelectronics and neuromorphic computing systems; neurocognitive systems and technologies; nanophotonics; natural science methods in a study of cultural heritage items; metrology, standardization, and monitoring in nanotechnology.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
