Chaotic computing cell based on nanostructured phase-change materials

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-09-13 DOI:10.1007/s10825-024-02221-1

A. A. Nevzorov, A. A. Burtsev, A. V. Kiselev, V. A. Mikhalevsky, V. V. Ionin, N. N. Eliseev, A. A. Lotin

{"title":"Chaotic computing cell based on nanostructured phase-change materials","authors":"A. A. Nevzorov, A. A. Burtsev, A. V. Kiselev, V. A. Mikhalevsky, V. V. Ionin, N. N. Eliseev, A. A. Lotin","doi":"10.1007/s10825-024-02221-1","DOIUrl":null,"url":null,"abstract":"<div><p>This paper presents and investigates a new architecture of a computational cell based on nanoparticles of the phase-change material Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>. Such a cell is a chaotic array of nanoparticles deposited between closely spaced electrical contacts. The state of such a structure is determined by the resistance of the nanoparticle array, which depends on the phase state of each particle of the material. Simulation results show that the proposed structure has a number of electrical states switching features that cannot be achieved using a thin film architecture. The proposed architecture allows for smoother and more controlled switching of the resistance by electrical pulses. Simulation of the evolution of the cell state using complex control actions showed that the proposed structure can behave as an artificial convolutional neuron with horizontal connections and also as a multi-level memory cell. In addition, the proposed design is technologically simple to achieve and inexpensive to manufacture.</p></div>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":"23 6","pages":"1448 - 1454"},"PeriodicalIF":2.2000,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10825-024-02221-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

This paper presents and investigates a new architecture of a computational cell based on nanoparticles of the phase-change material Ge₂Sb₂Te₅. Such a cell is a chaotic array of nanoparticles deposited between closely spaced electrical contacts. The state of such a structure is determined by the resistance of the nanoparticle array, which depends on the phase state of each particle of the material. Simulation results show that the proposed structure has a number of electrical states switching features that cannot be achieved using a thin film architecture. The proposed architecture allows for smoother and more controlled switching of the resistance by electrical pulses. Simulation of the evolution of the cell state using complex control actions showed that the proposed structure can behave as an artificial convolutional neuron with horizontal connections and also as a multi-level memory cell. In addition, the proposed design is technologically simple to achieve and inexpensive to manufacture.

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基于纳米结构相变材料的混沌计算单元

本文介绍并研究了一种基于相变材料 Ge2Sb2Te5 纳米粒子的新型计算单元结构。这种电池是沉积在间距紧密的电触点之间的纳米粒子的混沌阵列。这种结构的状态由纳米粒子阵列的电阻决定，而电阻则取决于材料中每个粒子的相态。模拟结果表明，所提出的结构具有一些薄膜结构无法实现的电状态切换功能。所提出的结构可以通过电脉冲实现更平滑、更可控的电阻切换。利用复杂的控制动作模拟电池状态的演变表明，所提出的结构可以作为具有水平连接的人工卷积神经元，也可以作为多级存储单元。此外，所提出的设计在技术上简单易行，制造成本低廉。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.