Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-09-11 DOI:10.1007/s10825-024-02231-z
P. J. Baymatov, B. T. Abdulazizov, O. M. Yunusov, Kh. N. Juraev, A. A. Saydaliev
{"title":"Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature","authors":"P. J. Baymatov, B. T. Abdulazizov, O. M. Yunusov, Kh. N. Juraev, A. A. Saydaliev","doi":"10.1007/s10825-024-02231-z","DOIUrl":null,"url":null,"abstract":"<p>The numerical and analytical results of a study on the paramagnetism of a two-dimensional electron gas depending on concentration and temperature are presented. The dependence of spin susceptibility on the width of the quantum well, temperature, concentration, and chemical potential at the resonance points and away from it was analyzed. The susceptibility was analyzed in the model of an ideal gas with a parabolic spectrum and a quantum well of infinite depth. The numerical results of the susceptibility calculation will be presented in graphs for different temperatures, quantum well widths, and concentrations.</p>","PeriodicalId":620,"journal":{"name":"Journal of Computational Electronics","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Computational Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s10825-024-02231-z","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

The numerical and analytical results of a study on the paramagnetism of a two-dimensional electron gas depending on concentration and temperature are presented. The dependence of spin susceptibility on the width of the quantum well, temperature, concentration, and chemical potential at the resonance points and away from it was analyzed. The susceptibility was analyzed in the model of an ideal gas with a parabolic spectrum and a quantum well of infinite depth. The numerical results of the susceptibility calculation will be presented in graphs for different temperatures, quantum well widths, and concentrations.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
二维电子气体的顺磁特性取决于浓度和温度
本文介绍了二维电子气体的顺磁性取决于浓度和温度的数值和分析结果。研究分析了自旋磁感应强度与量子阱宽度、温度、浓度以及共振点和远离共振点的化学势的关系。在具有抛物线光谱和无限深度量子井的理想气体模型中分析了自旋感度。不同温度、量子井宽度和浓度下的电感计算结果将以图表形式呈现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
期刊最新文献
Modeling to study the shape, dimensionality and crystal structure dependence of energy band gap in nanosized semiconductors Analyzing the operational versatility of advanced IBC solar cells at different temperatures and also with variation in minority carrier lifetimes Chaotic computing cell based on nanostructured phase-change materials Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature A simulation study of electrostatically doped silicene and graphene nanoribbon FETs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1