Simulations of RF wave-induced modulation of filament growth and bipolar resistive switching in conductive bridging RAM

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-09-10 DOI:10.1007/s10825-024-02228-8

Yifei Yin, Toshihiro Nakaoka

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Abstract

We have simulated Ag–Ge–Te-based conductive bridge RAM (CBRAM) under RF electromagnetic wave input to investigate the RF effects on heat transfer and electrochemical reaction. The RF simulations agreed with the experimental transmission coefficient S₂₁ between 0.4 and 1 GHz, indicating an effective, uniform electric field applied in the RF-applicable CBRAMs. The heat transfer simulations showed a minimal temperature increase of about 1 K under the RF wave at 10 MHz and 10 dBm, indicating negligible thermal effects. The electrochemical simulations were based on the Nernst–Planck equation, taking into account the Ag ion transport in the Ag–GeTe electrolyte by diffusion and migration. Electrode kinetics were calculated for charge transfer reactions using the Butler–Volmer equation. The cathode electrode moved at a velocity equal to the rate of Ag electrodeposition on the cathode. The electrode movement represented filament growth. The electrochemical simulations successfully reproduced filament growth, bipolar resistive switching, experimental currents, and SET/RESET voltages. In addition, the electrochemical simulations under RF waves showed a decrease in the magnitude of SET and RESET voltages, consistent with experimental observations. The RF-induced SET/RESET voltage modulation was attributed to redox reactions that changed the average ion concentration during RF cycles, accelerating filament growth and dissolution.

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导电桥接 RAM 中射频波诱导的灯丝生长调制和双极电阻开关模拟

我们模拟了射频电磁波输入下的 Ag-Ge-Te 基导电桥式 RAM（CBRAM），以研究射频对热传导和电化学反应的影响。射频模拟结果与 0.4 至 1 GHz 范围内的实验传输系数 S21 一致，表明射频适用的 CBRAM 中存在有效、均匀的电场。热传导模拟显示，在 10 MHz 和 10 dBm 的射频波下，温度升高幅度最小，约为 1 K，表明热效应可以忽略不计。电化学模拟以 Nernst-Planck 方程为基础，考虑了 Ag-GeTe 电解质中通过扩散和迁移进行的 Ag 离子传输。使用巴特勒-沃尔默方程计算了电荷转移反应的电极动力学。阴极电极的移动速度等于阴极上的银电沉积速率。电极的移动代表了灯丝的生长。电化学模拟成功地再现了灯丝生长、双极电阻开关、实验电流和 SET/RESET 电压。此外，射频波下的电化学模拟还显示出 SET 和 RESET 电压幅度的减小，这与实验观察结果一致。射频引起的 SET/RESET 电压调制归因于氧化还原反应，这种反应在射频周期中改变了平均离子浓度，加速了灯丝的生长和溶解。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.