Raman spectroscopy of atomically thin HfX2 (X=S, Se)

IF 4.5 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY 2D Materials Pub Date : 2024-08-30 DOI:10.1088/2053-1583/ad70c8
Chhor Yi Ly, Chenda Vong, Tharith Sriv, Hyeonsik Cheong
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Abstract

We investigated interlayer modes of few-layer HfX2 (X = S, Se) by using low-frequency micro-Raman spectroscopy with three excitation energies (1.96 eV, 2.33 eV, 2.54 eV) under vacuum condition (∼10−6Torr). We observed interlayer modes in HfSe2 when the 2.54 eV excitation energy was used. The low-frequency Raman spectra reveal a series of shear and breathing modes (<50 cm−1) that are helpful for identifying the number of layers. The in-plane Eg and out-of-plane A1g modes of HfSe2 are located at ∼150 cm−1 and ∼200 cm−1, respectively. In HfS2, in-plane Eg and out-of-plane A1g optical phonons are observed at ∼260 cm−1 and ∼337 cm−1, respectively. The in-plane and out-of-plane force constants of atomically thin HfSe2 are obtained to be 1.87 × 1019N m−3 and 6.55 × 1019N m−3, respectively, by fitting the observed interlayer modes using the linear chain model. These results provide valuable information on materials parameters for device designs using atomically-thin layered HfX2 (X = S, Se).
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原子薄 HfX2(X=S,Se)的拉曼光谱
我们在真空条件(∼10-6 托)下使用三种激发能量(1.96 eV、2.33 eV、2.54 eV)的低频微拉曼光谱研究了少层 HfX2(X = S、Se)的层间模式。当使用 2.54 eV 激发能量时,我们在 HfSe2 中观察到了层间模式。低频拉曼光谱显示了一系列剪切和呼吸模式(<50 cm-1),有助于确定层数。HfSe2 的面内 Eg 和面外 A1g 模式分别位于 ∼150 cm-1 和 ∼200 cm-1。在 HfS2 中,面内 Eg 和面外 A1g 光学声子分别位于 ∼260 cm-1 和 ∼337 cm-1。利用线性链模型拟合观察到的层间模式,得出原子薄的 HfSe2 的面内和面外力常数分别为 1.87 × 1019N m-3 和 6.55 × 1019N m-3。这些结果为使用原子薄层 HfX2(X = S、Se)进行器件设计提供了宝贵的材料参数信息。
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来源期刊
2D Materials
2D Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
10.70
自引率
5.50%
发文量
138
审稿时长
1.5 months
期刊介绍: 2D Materials is a multidisciplinary, electronic-only journal devoted to publishing fundamental and applied research of the highest quality and impact covering all aspects of graphene and related two-dimensional materials.
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