A Cristina Carranza, E Rosendo, H Pérez Ladrón de Guevara, C Morales, R Romano, G García, A Coyopol, R Galeazzi, J Zepeda
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引用次数: 0
Abstract
Aluminum-doped zinc oxide (AZO) thin films were deposited on glass substrates at room temperature by RF sputtering technique. Power ramps between 125 and 105 W were applied with a step of 4 W by intervals of 15, 7.5 and 1.8 min, for 180 min at 1.60 Pa. In this study, we investigated the structural, morphological, electrical, and optical properties of AZO films. X-ray Diffraction analysis showed that the films have a wurtzite-type hexagonal crystalline structure with a preferential crystallographic orientation (002) normal to the c axis. The average transmittance is greater than 76% for the wavelength range in the visible spectrum. The bandgap values were found between 3.32 and 4.01 eV, and refractive index was 1.79–2.60. Atomic force microscope measurements show homogeneous films with a roughness between 17–22 nm. A minimum resistivity value of 2.0 × 10−3 Ω cm was obtained for the film by using a power ramp of 4 W/1.8 min.
期刊介绍:
Accounts of Chemical Research presents short, concise and critical articles offering easy-to-read overviews of basic research and applications in all areas of chemistry and biochemistry. These short reviews focus on research from the author’s own laboratory and are designed to teach the reader about a research project. In addition, Accounts of Chemical Research publishes commentaries that give an informed opinion on a current research problem. Special Issues online are devoted to a single topic of unusual activity and significance.
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