Influence of power ramps on the physical properties of AZO thin films deposited at room temperature by RF magnetron sputtering technique

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Semiconductor Science and Technology Pub Date : 2024-08-14 DOI:10.1088/1361-6641/ad6c79

A Cristina Carranza, E Rosendo, H Pérez Ladrón de Guevara, C Morales, R Romano, G García, A Coyopol, R Galeazzi, J Zepeda

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Abstract

Aluminum-doped zinc oxide (AZO) thin films were deposited on glass substrates at room temperature by RF sputtering technique. Power ramps between 125 and 105 W were applied with a step of 4 W by intervals of 15, 7.5 and 1.8 min, for 180 min at 1.60 Pa. In this study, we investigated the structural, morphological, electrical, and optical properties of AZO films. X-ray Diffraction analysis showed that the films have a wurtzite-type hexagonal crystalline structure with a preferential crystallographic orientation (002) normal to the c axis. The average transmittance is greater than 76% for the wavelength range in the visible spectrum. The bandgap values were found between 3.32 and 4.01 eV, and refractive index was 1.79–2.60. Atomic force microscope measurements show homogeneous films with a roughness between 17–22 nm. A minimum resistivity value of 2.0 × 10⁻³ Ω cm was obtained for the film by using a power ramp of 4 W/1.8 min.

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功率斜坡对射频磁控溅射技术在室温下沉积的 AZO 薄膜物理性质的影响

采用射频溅射技术在室温下将掺铝氧化锌（AZO）薄膜沉积在玻璃基底上。在 1.60 Pa 的条件下，以 15、7.5 和 1.8 分钟为间隔，施加 125 至 105 W 的功率斜坡，步长为 4 W，持续 180 分钟。在这项研究中，我们研究了 AZO 薄膜的结构、形态、电学和光学特性。X 射线衍射分析表明，薄膜具有钨锆石型六方晶体结构，晶体学取向（002）优先于 c 轴。在可见光谱的波长范围内，平均透射率大于 76%。带隙值介于 3.32 和 4.01 eV 之间，折射率为 1.79-2.60。原子力显微镜测量显示，薄膜均匀，粗糙度在 17-22 纳米之间。使用 4 W/1.8 分钟的斜坡功率，薄膜的电阻率最小值为 2.0 × 10-3 Ω cm。

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.