First principles quantum analysis of the structural, electronic, optical, spintronic, and mechanical properties of doped half-Heusler compounds for green energy applications

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2024-09-12 DOI:10.1007/s11082-024-07372-w
Zeesham Abbas, Shafaat Hussain Mirza, Abdelmohsen A. Nassani, Amna Parveen, Muhammad Aslam
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Abstract

First-principles computations have been employed to investigate the structural, electronic, magneto-optical, and elastic features of Half-Heusler compounds Ho1-xZrxNiSb (x = 12.5%, 25% & 37.5%) by implementing the FP-LAPW technique in the WIEN2K software. The electronic features (DOS and band dispersions) have been explored, considering the tight association between the d/f-states of Ni/Ho/Zr-atoms. The results calculated by GGA + U approximation indicate that Ho1-xZrxNiSb (x = 12.5%, 25% & 37.5%) exhibit metallic properties. The \({\varepsilon }_{2}(\omega )\) spectra demonstrate that Ho1-xZrxNiSb (x = 12.5%, 25% & 37.5%) exhibit substantial photon absorption throughout a wide range of energies (∼1.0 to ∼6.0 eV). These compounds have low reflectivity towards incident photons and reflect around 45% of incident photons throughout the full energy spectrum. Ho1-xZrxNiSb (x = 37.5%) exhibit the highest magnetic moment among Ho1-xZrxNiSb (x = 12.5%, 25% & 37.5%) due to hybridization of Ho [\({4f}^{11}\)], Ni [\({3d}^{8}\)], and Zr [\({4d}^{2}\)] localized orbitals. These materials have great potential as candidates for future spintronic applications. Moreover, it has been observed that these half-Heusler compounds possess mechanical stability as they satisfy the Born stability criterion. The mechanical features of Ho1-xZrxNiSb (x = 12.5%, 25% & 37.5%) are analyzed using elastic metrics such as Pugh’s ratio and Young’s modulus. Furthermore, the examination of Pugh’s ratio and Cauchy's pressure reveals that these half-Heusler compounds exhibit a brittle nature.

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对用于绿色能源应用的掺杂半休斯勒化合物的结构、电子、光学、自旋电子和机械特性进行第一原理量子分析
通过在 WIEN2K 软件中实施 FP-LAPW 技术,利用第一性原理计算研究了半休斯勒化合物 Ho1-xZrxNiSb (x = 12.5%, 25% & 37.5%) 的结构、电子、磁光和弹性特征。考虑到 Ni/Ho/Zr 原子的 d/f 态之间的紧密联系,对电子特征(DOS 和带辐散)进行了探索。通过 GGA + U 近似计算得出的结果表明,Ho1-xZrxNiSb(x = 12.5%,25% & 37.5%)具有金属特性。({\varepsilon }_{2}(\omega )\) 光谱表明,Ho1-xZrxNiSb(x = 12.5%、25% & 37.5%)在很宽的能量范围内(∼1.0 至∼6.0 eV)表现出大量的光子吸收。这些化合物对入射光子的反射率较低,在整个能谱范围内可反射约 45% 的入射光子。由于Ho [\({4f}^{11}\)]、Ni [\({3d}^{8}\)]和Zr [\({4d}^{2}\)]局部轨道的杂化,Ho1-xZrxNiSb(x = 37.5%)在Ho1-xZrxNiSb(x = 12.5%,25% & 37.5%)中表现出最高的磁矩。这些材料作为未来自旋电子应用的候选材料具有巨大的潜力。此外,人们还观察到这些半休斯勒化合物具有机械稳定性,因为它们满足博恩稳定性标准。利用普氏比和杨氏模量等弹性指标分析了 Ho1-xZrxNiSb(x = 12.5%,25% & 37.5%)的机械特性。此外,对 Pugh's ratio 和 Cauchy's pressure 的研究表明,这些半休斯勒化合物具有脆性。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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