Recent progress of indium-bearing group-III nitrides and devices: a review

IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2024-09-12 DOI:10.1007/s11082-024-07459-4

Yixun He, Linhao Li, Jiaying Xiao, Liwei Liu, Guoqiang Li, Wenliang Wang

{"title":"Recent progress of indium-bearing group-III nitrides and devices: a review","authors":"Yixun He, Linhao Li, Jiaying Xiao, Liwei Liu, Guoqiang Li, Wenliang Wang","doi":"10.1007/s11082-024-07459-4","DOIUrl":null,"url":null,"abstract":"<p>During the past decades, group-III nitrides have emerged as a new impetus for the development of semiconductor industry and attracted significant attentions in different fields. Among them, indium-bearing group-III nitrides, such as InGaN, InAlN and their quaternary alloy InAlGaN show an adjustable bandgap in wide range including visible spectrum and ultraviolet spectrum, and their excellent electronic properties have been predicted by theoretical calculations. Therefore, indium-bearing group-III nitrides demonstrate great potential as solid lighting and photoelectric detection materials. However, the growth of high-quality indium-bearing group-III nitrides is hindered by the phase segregation of indium component and the lattice mismatch between substrate and epitaxial layer. Tremendous efforts have been paid to solve these issues, and remarkable results have been achieved accordingly. This review mainly focuses on the impressive results of theoretical calculation on properties of indium-bearing group-III nitrides and the breakthroughs in their epitaxial growth, together with the development of electron devices and photoelectric devices based on indium-bearing group-III nitrides. Based on the recent progress, the prospective for the future evolution of indium-bearing group-III nitrides and devices is speculated ultimately. This review provides a guideline for better understanding of the development of indium-bearing group-III nitrides and devices.</p>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":null,"pages":null},"PeriodicalIF":3.3000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11082-024-07459-4","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

During the past decades, group-III nitrides have emerged as a new impetus for the development of semiconductor industry and attracted significant attentions in different fields. Among them, indium-bearing group-III nitrides, such as InGaN, InAlN and their quaternary alloy InAlGaN show an adjustable bandgap in wide range including visible spectrum and ultraviolet spectrum, and their excellent electronic properties have been predicted by theoretical calculations. Therefore, indium-bearing group-III nitrides demonstrate great potential as solid lighting and photoelectric detection materials. However, the growth of high-quality indium-bearing group-III nitrides is hindered by the phase segregation of indium component and the lattice mismatch between substrate and epitaxial layer. Tremendous efforts have been paid to solve these issues, and remarkable results have been achieved accordingly. This review mainly focuses on the impressive results of theoretical calculation on properties of indium-bearing group-III nitrides and the breakthroughs in their epitaxial growth, together with the development of electron devices and photoelectric devices based on indium-bearing group-III nitrides. Based on the recent progress, the prospective for the future evolution of indium-bearing group-III nitrides and devices is speculated ultimately. This review provides a guideline for better understanding of the development of indium-bearing group-III nitrides and devices.

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含铟 III 族氮化物和器件的最新进展：综述

在过去几十年中，III 族氮化物已成为半导体工业发展的新动力，并在不同领域引起了广泛关注。其中，含铟Ⅲ族氮化物，如 InGaN、InAlN 及其四元合金 InAlGaN，在包括可见光谱和紫外光谱在内的宽范围内显示出可调带隙，其优异的电子特性已被理论计算所预测。因此，含铟 III 族氮化物作为固体照明和光电检测材料具有巨大的潜力。然而，高质量含铟Ⅲ族氮化物的生长受到铟成分相分离以及基底和外延层之间晶格不匹配的阻碍。为了解决这些问题，人们付出了巨大的努力，并取得了令人瞩目的成果。本综述主要关注含铟Ⅲ族氮化物性质理论计算的重要成果及其外延生长的突破性进展，以及基于含铟Ⅲ族氮化物的电子器件和光电器件的发展。根据最新进展，最终推测了含铟Ⅲ族氮化物和器件的未来发展前景。本综述为更好地了解含铟Ⅲ族氮化物和器件的发展提供了指导。

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.