Influence of the Acetylene Flow Rate and Process Pressure on the Carbon Deposition Behavior by Thermal Chemical Vapor Deposition Process

Abstract

We used the chemical vapor deposition process to deposit carbon film at a high temperature (900 °C). The carbon films were deposited on AISI 1006 foils using an acetylene gas. We analyzed the carbon film deposited on the surface using Raman spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy to define changes in the bonding structure of the carbon film. The results of Raman spectroscopy and high-resolution transmission electron microscopy revealed that as the acetylene flow rate increased, the shape of the deposited carbon film changed from graphene to graphite. In addition, in order to compare the quality of the carbon film in terms of mechanical and electrical properties, carbon films treated under various conditions were closely analyzed using nano-indenter and a sheet resistance meter. Therefore, the optimal condition (1 Torr-50 sccm) was selected in which graphene was uniformly deposited and had the lowest electrical resistance (500 Ω/sq) and highest hardness (12 GPa).