Fabrication and Unraveling the Morphological, Structural, Optical and Dielectric Features of PMMA-SiO2/CuO Promising Ternary Nanostructures for Nanoelectronic and Photonic Applications

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Silicon Pub Date : 2024-09-02 DOI:10.1007/s12633-024-03131-4
Majeed Ali Habeeb, Idrees Oreibi, Rehab Shather Abdul Hamza, Fellah Mamoun
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Abstract

This research is essential for the progress of nanocomposite technology, with ramifications for society. The development of economical and high-performing nanocomposites may result in improved and adaptable optoelectronic devices, therefore contributing to technical progress and economic advantages. The (PMMA-SiO2/CuO) nanocomposites(NCs) have been prepared using the solution cast method. This study examined the structural, optical, and electrical characteristics of nanocomposites consisting of PMMA-SiO2/CuO. The nanoparticles were uniformly distributed throughout the composite, resulting in a cohesive network within the polymer matrix, as evidenced by the optical microscope photos. The FTIR analysis showed a shift in the peak location and changes in the shape and intensity compared to the pure PMMA sample. The findings about the optical characteristics indicate a significant increase in absorption by approximately 331% (from 0.65 to 2.77) at a wavelength of 520 nm. The absorbance, refractive index, and optical conductivity of pure PMMA exhibited an increase with the rising concentration of (SiO2/CuO) nanoparticles. Additionally, the energy gap experienced a decrease of roughly 120% (from 4.01 to 1.81 eV) for allowed indirect transitions and 248% (from 3.48 to 1.05 eV) for forbidden indirect transitions with increasing concentration of (SiO2/CuO) nanoparticles. The nanocomposites of PMMA-SiO2/CuO exhibit a significant absorbance level in the ultraviolet (UV) region. As the frequency of the applied electric field increased, the dielectric constant and dielectric loss of the (PMMA-SiO2/CuO) nanocomposites decreased, as indicated by the experimental results. With an increase in frequency, the electrical conductivity of an alternating current (A.C.) increases. The dielectric loss of pure PMMA exhibited an increase with the increasing concentration of (PMMA-SiO2/CuO) nanoparticles. At a frequency of 100 Hz, the presence of SiO2/CuO nanoparticles in PMMA increased the dielectric constant by about 44% and the A.C. electrical conductivity by approximately 328% when the nanoparticles accounted for 6% of the total weight. The pressure sensor application investigation findings on NCs demonstrate a direct correlation between the applied pressure and the rise in electrical capacitance (Cp).

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制备并揭示 PMMA-SiO2/CuO 的形态、结构、光学和介电特性--有望用于纳米电子和光子应用的三元纳米结构
这项研究对纳米复合材料技术的发展至关重要,并将对社会产生深远影响。开发经济、高性能的纳米复合材料可改进光电设备并提高其适应性,从而促进技术进步和经济效益。本研究采用溶液浇铸法制备了(PMMA-SiO2/CuO)纳米复合材料(NCs)。本研究考察了由 PMMA-SiO2/CuO 组成的纳米复合材料的结构、光学和电学特性。从光学显微镜照片可以看出,纳米粒子均匀地分布在整个复合材料中,在聚合物基体中形成了一个内聚网络。傅立叶变换红外分析表明,与纯 PMMA 样品相比,峰值位置发生了移动,形状和强度也发生了变化。有关光学特性的研究结果表明,在 520 纳米波长处,吸收率显著增加了约 331%(从 0.65 增加到 2.77)。纯 PMMA 的吸光度、折射率和光导率随着(SiO2/CuO)纳米粒子浓度的增加而增加。此外,随着(SiO2/CuO)纳米粒子浓度的增加,允许间接跃迁的能隙下降了大约 120%(从 4.01 到 1.81 eV),禁止间接跃迁的能隙下降了 248%(从 3.48 到 1.05 eV)。PMMA-SiO2/CuO 纳米复合材料在紫外(UV)区域表现出显著的吸光水平。实验结果表明,随着外加电场频率的增加,(PMMA-SiO2/CuO)纳米复合材料的介电常数和介电损耗降低。随着频率的增加,交流电(A.C.)的导电率也会增加。纯 PMMA 的介电损耗随着(PMMA-SiO2/CuO)纳米粒子浓度的增加而增加。在频率为 100 Hz 时,当纳米粒子占 PMMA 总重量的 6% 时,PMMA 中 SiO2/CuO 纳米粒子的存在使介电常数增加了约 44%,交流导电率增加了约 328%。关于 NCs 的压力传感器应用研究结果表明,施加的压力与电容(Cp)的上升之间存在直接的相关性。
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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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