A Low Energy Loss Superjunction LIGBT with Integrated Double Self-Biased MOS

Abstract

A novel Superjunction LIGBT with integrated planar Self-Biased PMOS (abbrev.SBP) and planar Self-Biased NMOS (abbrev.SBN), named DM-SJ-LIGBT is proposed and investigated. The SBN is connected in parallel with the main Gate, thus it is adaptively turned on and turned off with the main Gate. The gate and drain of SBP are shorted together to emitter electrode, and the P-pillar work as the source of SBP. Consequently, the SBP could realize adaptively turned on and turned off ability without additional gate signal control .At the forward conduction state, the planar SBN and trench main Gate are turned on with double electron channel, thus it effectively reduce \({V}_{ON}\) compared with the conventional SJ-LIGBT. However, the SBP is turn-off state with \({V}_{GS,P}>{V}_{TH,P}\). At the turn off state, The SBP is automatically turned on to extract the holes when the \({V}_{GS,P}<{V}_{TH,P}\), which reduces the turn-off loss \({E}_{OFF}\) significantly. Consequently, the DM-SJ-LIGBT obtains a superior trade-off relationship between forward conduction voltage \({V}_{ON}\) and \({E}_{OFF}\) . At the same \({E}_{OFF}\) of 0.61 mJ/\(cm^2\), the \({V}_{ON}\) of the DM-SJ-LIGBT with \({T}_{SBN}\) =100nm and the DM-SJ-LIGBT with \({T}_{SBN}\) =50 nm is 11% and 22% lower than the conventional SJ-LIGBT, respectively. Moreover, When \({V}_{ON}\) is 1.36 V, the \({E}_{OFF}\) of the DM-SJ-LIGBT with \({T}_{SBN}\)=100nm and the DM-SJ-LIGBT with \({T}_{SBN}\)=50 nm are 0.354 and 0.147 mJ/\(cm^2\) respectively, which is 42% and 76% less than that of the conventional SJ-LIGBT.