Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films

arXiv - PHYS - Mesoscale and Nanoscale Physics Pub Date : 2024-09-06 DOI:arxiv-2409.04567

Sara Bey, Shelby S. Fields, Nicholas G. Combs, Bence G. Márkus, Dávid Beke, Jiashu Wang, Anton V. Ievlev, Maksym Zhukovskyi, Tatyana Orlova, László Forró, Steven P. Bennett, Xinyu Liu, Badih A. Assaf

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Abstract

The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of materials that can under certain conditions manifest a strong AHE, without having a net magnetization. But the ability to control their AHE is still lacking. In this study, we demonstrate that the AHE in altermagnetic {\alpha}-MnTe grown on GaAs(111) substrates can be "written on-demand" by cooling the material under an in-plane magnetic field. The magnetic field controls the strength and the coercivity of the AHE. Remarkably, this control is unique to {\alpha}-MnTe grown on GaAs and is absent in {\alpha}-MnTe grown on SrF2. The tunability that we reveal challenges our current understanding of the symmetry-allowed AHE in this material and opens new possibilities for the design of altermagnetic spintronic devices.

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超磁锰碲薄膜中的反常霍尔效应的意外调谐

对反铁磁体磁态敏感的反常霍尔效应（AHE）的发现，如果能找到承载可调谐强 AHE 的材料，就能开启自旋电子学的新纪元。反铁磁体是一类新型材料，在特定条件下可以表现出很强的 AHE，而没有净磁化。但是，控制其 AHE 的能力仍然缺乏。在这项研究中，我们证明了生长在砷化镓（111）衬底上的变磁性{α}-锰钛（altermagnetic{alpha}-MnTe）中的AHE可以通过在面内磁场下冷却材料来 "按需写入"。磁场控制着 AHE 的强度和矫顽力。值得注意的是，这种控制是在砷化镓上生长的{α}-锰钛所独有的，而在SrF2上生长的{α}-锰钛则不存在。我们所揭示的可调谐性挑战了我们目前对这种材料中对称性允许的 AHE 的理解，并为设计改磁自旋电子器件开辟了新的可能性。

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