Christian Marty, Zijin Lei, Saverio Silletta, Christian Reichl, Werner Dietsche, Werner Wegscheider
{"title":"Memory resistor based in GaAs 2D-bilayers: In and out of equilibrium","authors":"Christian Marty, Zijin Lei, Saverio Silletta, Christian Reichl, Werner Dietsche, Werner Wegscheider","doi":"arxiv-2409.11850","DOIUrl":null,"url":null,"abstract":"Resonant tunneling between closely spaced two dimensional electron gases is a\nsingle particle phenomenon that has sparked interest for decades. High\ntunneling conductances at equal electron densities are observed whenever the\nFermi levels of the two quantum wells align. Detuning the Fermi levels out of\nthe resonant 2D-2D tunneling regime causes a negative differential resistance.\nThe negative differential resistance leads to a hysteresis when operating the\ndevice in a current driven mode, allowing a bilayer system to function as a\nvolatile memory resistor.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Mesoscale and Nanoscale Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.11850","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Resonant tunneling between closely spaced two dimensional electron gases is a
single particle phenomenon that has sparked interest for decades. High
tunneling conductances at equal electron densities are observed whenever the
Fermi levels of the two quantum wells align. Detuning the Fermi levels out of
the resonant 2D-2D tunneling regime causes a negative differential resistance.
The negative differential resistance leads to a hysteresis when operating the
device in a current driven mode, allowing a bilayer system to function as a
volatile memory resistor.
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