Structural, optical and mechanical properties of Cr doped β-Ga2O3 single crystals

IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Applied Physics A Pub Date : 2024-09-12 DOI:10.1007/s00339-024-07870-4
P. Vijayakumar, K. Ganesan, R. M. Sarguna, Edward Prabu Amaladass, M. Suganya, R. Ramaseshan, Sujoy Sen, S. Ganesamoorthy, P. Ramasamy
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Abstract

Undoped and Cr doped β-Ga2O3 (100) single crystals are grown by optical floating zone method. The full width at half maximum of rocking curve is found to be 106 arc.sec for undoped β-Ga2O3 crystals whereas the 100 and 200 ppm of Cr doped β-Ga2O3 crystals display multiple rocking curves with large peak widths indicating the presence of structural defects. Raman measurements reveal broadening in the vibrational mode of ~ 350 cm− 1 with a shoulder peak indicating the Cr3+ dopants preferentially substitute for Ga3+ at the octahedral sites. Further, the Cr doped β-Ga2O3 crystals display strong optical absorption bands about 420 and 597 nm in the UV-Vis spectroscopy. Moreover, the observation of sharp characteristic photoluminescence emission lines at 690 and 697 nm also confirms the Cr substitution in the doped crystals. The indentation hardness increases nearly linear from 13.0 ± 0.6 to 17.9 ± 0.4 GPa whilst the indentation modulus decreases from 224.9 ± 21.4 to 202.4 ± 11.9 GPa upon Cr doping of 200 ppm in β-Ga2O3. The structural defects caused by the Cr doping interrupt the movement of indentation induced dislocations that results in the increase of hardness of the Cr doped β-Ga2O3 (100) single crystals.

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掺杂铬的β-Ga2O3 单晶的结构、光学和机械特性
采用光学浮区法生长了未掺杂和掺杂铬的β-Ga2O3(100)单晶体。结果发现,未掺杂的 β-Ga2O3 晶体的摇摆曲线半最大全宽为 106 弧秒,而掺杂 100 和 200 ppm Cr 的 β-Ga2O3 晶体显示出多条摇摆曲线,峰宽较大,表明存在结构缺陷。拉曼测量显示,在 ~ 350 cm- 1 的振动模式中出现了宽化现象,并伴有肩峰,这表明掺杂的 Cr3+ 会优先取代八面体位点上的 Ga3+。此外,在紫外可见光谱中,掺杂了 Cr 的 β-Ga2O3 晶体显示出约 420 和 597 纳米的强光吸收带。此外,在 690 和 697 纳米波长处观察到的尖锐光致发光发射线也证实了掺杂晶体中的铬替代物。在 β-Ga2O3 中掺入 200 ppm 的铬后,压痕硬度从 13.0 ± 0.6 GPa 几乎线性地增加到 17.9 ± 0.4 GPa,而压痕模量则从 224.9 ± 21.4 GPa 下降到 202.4 ± 11.9 GPa。掺杂铬造成的结构缺陷打断了压痕诱导位错的运动,从而导致掺杂铬的β-Ga2O3 (100) 单晶硬度增加。
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来源期刊
Applied Physics A
Applied Physics A 工程技术-材料科学:综合
CiteScore
4.80
自引率
7.40%
发文量
964
审稿时长
38 days
期刊介绍: Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.
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