Pub Date : 2026-02-03DOI: 10.1007/s00339-026-09321-8
Pooja Agarwal, Kamal Kishor, Ravindra Kumar Sinha
In this paper, we numerically investigate the design of an all-dielectric terahertz metasurface sensor with an ultra-high Q-factor, utilizing the concept of bound states in the continuum (BIC). The proposed metasurface consists of silicon-based cylindrical disks arranged as metamolecules. It is observed that two resonant modes are formed at 3.79 THz and 4.19 THz under symmetric conditions. By introducing a local asymmetry parameter (α) to break the structural symmetry, a leaky channel emerges, converting the ideal BIC into a quasi-BIC (q-BIC). This results in a sharp resonance at 4.06 THz with a Q-factor of 1.5 ×(:{10}^{4}). The numerically evaluated sensing performance demonstrates a high refractive index sensitivity of 1.0746 THz/RIU and a figure of merit (FOM) of 10854.56/RIU over a refractive index range of 1.00-1.15. Tuning the asymmetry further enhances the FOM up to 41330.77/RIU. The proposed metasurface finds strong potential for high-precision sensing, detection, and imaging in the terahertz frequency regime.
{"title":"Bound state in the continuum induced high-Q resonances in all-dielectric terahertz metasurface for enhanced refractive index sensing","authors":"Pooja Agarwal, Kamal Kishor, Ravindra Kumar Sinha","doi":"10.1007/s00339-026-09321-8","DOIUrl":"10.1007/s00339-026-09321-8","url":null,"abstract":"<div><p>In this paper, we numerically investigate the design of an all-dielectric terahertz metasurface sensor with an ultra-high Q-factor, utilizing the concept of bound states in the continuum (BIC). The proposed metasurface consists of silicon-based cylindrical disks arranged as metamolecules. It is observed that two resonant modes are formed at 3.79 THz and 4.19 THz under symmetric conditions. By introducing a local asymmetry parameter (α) to break the structural symmetry, a leaky channel emerges, converting the ideal BIC into a quasi-BIC (q-BIC). This results in a sharp resonance at 4.06 THz with a Q-factor of 1.5 ×<span>(:{10}^{4})</span>. The numerically evaluated sensing performance demonstrates a high refractive index sensitivity of 1.0746 THz/RIU and a figure of merit (FOM) of 10854.56/RIU over a refractive index range of 1.00-1.15. Tuning the asymmetry further enhances the FOM up to 41330.77/RIU. The proposed metasurface finds strong potential for high-precision sensing, detection, and imaging in the terahertz frequency regime.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"132 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146099249","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-03DOI: 10.1007/s00339-026-09335-2
Bassam Jasim, Murat Kaleli
A metal-insulator-metal (MIM) parallel plate thin-film capacitor of ceramic dielectric was fabricated using an n-type silicon wafer substrate and characterized electrically. The ferroelectric perovskite BST36 (Ba0.36, Sr0.64)TiO3 thin film dielectric was deposited via the RF magnetron sputtering technique, and the film is employed as a dielectric for the parallel plate ceramic capacitor. A molybdenum disilicide (MoSi2) thin film has been deposited via the DC magnetron sputtering technique, and the sheet resistance was 5.611 Ωcm− 2, after thermal processing. It has been used as a bottom metal contact for the device. While indium (In), copper (Cu), and silver (Ag) were deposited via the thermal evaporation technique and employed as top contact electrodes for the device. Molybdenum disilicide (MoSi2) has been used again as a top contact electrode as well as a bottom electrode. The capacitor was electrically characterized at room temperature under a 10 VDC bias and 1 MHz frequency. Measurements of dielectric loss, dielectric constant, and capacitance density were depended on the device structure and electrode material. The results of the MIM parallel plate capacitor structure of Ag/BST/MoSi2/n-Si exhibited the highest capacitance density achievement of 405 nFcm− 2 with a dielectric loss of 0.048. An optimal recorded dielectric loss was 0.024 at 10 VDC for the device structure In/BST/MoSi2/n-Si. The MoSi2/BST/MoSi2/n-Si a full parallel-plate ceramic capacitor device structure had a capacitance density of 47 nFcm− 2, a dielectric constant of 22.3; and a dielectric loss of 0.035.
{"title":"Electrode material influence on thin film BST ceramic capacitor","authors":"Bassam Jasim, Murat Kaleli","doi":"10.1007/s00339-026-09335-2","DOIUrl":"10.1007/s00339-026-09335-2","url":null,"abstract":"<div><p>A metal-insulator-metal (MIM) parallel plate thin-film capacitor of ceramic dielectric was fabricated using an n-type silicon wafer substrate and characterized electrically. The ferroelectric perovskite BST36 (Ba<sub>0.36</sub>, Sr<sub>0.64</sub>)TiO<sub>3</sub> thin film dielectric was deposited via the RF magnetron sputtering technique, and the film is employed as a dielectric for the parallel plate ceramic capacitor. A molybdenum disilicide (MoSi<sub>2</sub>) thin film has been deposited via the DC magnetron sputtering technique, and the sheet resistance was 5.611 Ωcm<sup>− 2</sup>, after thermal processing. It has been used as a bottom metal contact for the device. While indium (In), copper (Cu), and silver (Ag) were deposited via the thermal evaporation technique and employed as top contact electrodes for the device. Molybdenum disilicide (MoSi<sub>2</sub>) has been used again as a top contact electrode as well as a bottom electrode. The capacitor was electrically characterized at room temperature under a 10 VDC bias and 1 MHz frequency. Measurements of dielectric loss, dielectric constant, and capacitance density were depended on the device structure and electrode material. The results of the MIM parallel plate capacitor structure of Ag/BST/MoSi<sub>2</sub>/n-Si exhibited the highest capacitance density achievement of 405 nFcm<sup>− 2</sup> with a dielectric loss of 0.048. An optimal recorded dielectric loss was 0.024 at 10 VDC for the device structure In/BST/MoSi<sub>2</sub>/n-Si. The MoSi<sub>2</sub>/BST/MoSi<sub>2</sub>/n-Si a full parallel-plate ceramic capacitor device structure had a capacitance density of 47 nFcm<sup>− 2</sup>, a dielectric constant of 22.3; and a dielectric loss of 0.035.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"132 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s00339-026-09335-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146099254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-03DOI: 10.1007/s00339-026-09306-7
Ghasem KhosroBeygi, Mehran Shahmansouri
A novel plasmonic bandpass filter is proposed, comprising an infinity-shaped resonator integrated with metal-insulator-metal (MIM) waveguide structures. The proposed profile enables tunable spectral filtering in the near-infrared region. Owing to its unique structure, the resonator supports three distinct resonant modes, producing a characteristic triple-peak transmission spectrum spanning the wavelength range of (:0.8-3:mu:m). Numerical simulations confirm that the spectral response of the proposed waveguide-consisting resonance positions, bandwidth and transmission intensities-can be precisely matched by adjusting the resonator’s geometric parameters. This filter demonstrates a high transmission efficiency (more than 0.8) and a desirable quality factor at the subwavelength-scale, which indicates its originality and importance. The tunable narrowband performance in a wide spectral window highlights its potential for diverse applications in optical sensing, biomedical imaging, spectral filtering, optoelectronic systems as well as astronomical instrumentation.
{"title":"Narrowband filter based on MIM plasmonic waveguide with a ∞-shaped resonator","authors":"Ghasem KhosroBeygi, Mehran Shahmansouri","doi":"10.1007/s00339-026-09306-7","DOIUrl":"10.1007/s00339-026-09306-7","url":null,"abstract":"<div><p>A novel plasmonic bandpass filter is proposed, comprising an infinity-shaped resonator integrated with metal-insulator-metal (MIM) waveguide structures. The proposed profile enables tunable spectral filtering in the near-infrared region. Owing to its unique structure, the resonator supports three distinct resonant modes, producing a characteristic triple-peak transmission spectrum spanning the wavelength range of <span>(:0.8-3:mu:m)</span>. Numerical simulations confirm that the spectral response of the proposed waveguide-consisting resonance positions, bandwidth and transmission intensities-can be precisely matched by adjusting the resonator’s geometric parameters. This filter demonstrates a high transmission efficiency (more than <i>0.8</i>) and a desirable quality factor at the subwavelength-scale, which indicates its originality and importance. The tunable narrowband performance in a wide spectral window highlights its potential for diverse applications in optical sensing, biomedical imaging, spectral filtering, optoelectronic systems as well as astronomical instrumentation.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"132 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146099253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-03DOI: 10.1007/s00339-026-09346-z
Vangapandu Anusha, Akumarti Raju, Budithi Ravi Kumar, Gattupalli Manikya Rao, K. Samatha, Naresh Kumar Rotte, Kasinathan Kaviyarasu
This work demonstrates the simple, economical, and rapid synthesis of magnesia oxide (Mn2O3), copper oxide (CuO), and their compound Mn2O3/CuO composite, employing fundamental green practices. The as-synthesized Mn2O3, CuO, and Mn2O3/CuO have been evaluated using X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and field-emission scanning electron microscopy (FESEM). The presence of distinct Mn2O3 and CuO phases, as well as the interphase between them, is evident in the TEM micrographs. Using the Tauc plot from absorption spectra, the energy bandgaps of pure Mn2O3, CuO, and the Mn2O3/CuO composite were estimated to be 2.6, 2.1, and 3.2 eV, respectively. The obtained materials were investigated for their photoluminescence (PL) and chromaticity characteristics to understand interfacial charge-transfer behavior. The PL spectra reveal broad blue - green emissions with main peaks located at 414 –437 nm for Mn2O3, 414 –439 nm for CuO, and a slightly red-shifted, intensified band at 435 nm for the Mn2O3/CuO composite. The corresponding CIE 1931 chromaticity coordinates (x ≈ 0.31, y ≈ 0.58) confirm a vivid green emission region, indicating improved color purity and radiative efficiency. These results demonstrate that coupling Mn2O3 with CuO tailors the electronic band alignment, suppresses non-radiative losses, and promotes strong visible luminescence, making the Mn2O3/CuO nanocomposite a promising candidate for green light - emitting and optoelectronic devices.
{"title":"Synergistic effects in Mn2O3/CuO nanocomposites for enhanced and color-tunable emission for optoelectronic applications","authors":"Vangapandu Anusha, Akumarti Raju, Budithi Ravi Kumar, Gattupalli Manikya Rao, K. Samatha, Naresh Kumar Rotte, Kasinathan Kaviyarasu","doi":"10.1007/s00339-026-09346-z","DOIUrl":"10.1007/s00339-026-09346-z","url":null,"abstract":"<div><p>This work demonstrates the simple, economical, and rapid synthesis of magnesia oxide (Mn<sub>2</sub>O<sub>3</sub>), copper oxide (CuO), and their compound Mn<sub>2</sub>O<sub>3</sub>/CuO composite, employing fundamental green practices. The as-synthesized Mn<sub>2</sub>O<sub>3</sub>, CuO, and Mn<sub>2</sub>O<sub>3</sub>/CuO have been evaluated using X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and field-emission scanning electron microscopy (FESEM). The presence of distinct Mn<sub>2</sub>O<sub>3</sub> and CuO phases, as well as the interphase between them, is evident in the TEM micrographs. Using the Tauc plot from absorption spectra, the energy bandgaps of pure Mn<sub>2</sub>O<sub>3</sub>, CuO, and the Mn<sub>2</sub>O<sub>3</sub>/CuO composite were estimated to be 2.6, 2.1, and 3.2 eV, respectively. The obtained materials were investigated for their photoluminescence (PL) and chromaticity characteristics to understand interfacial charge-transfer behavior. The PL spectra reveal broad blue - green emissions with main peaks located at 414 –437 nm for Mn<sub>2</sub>O<sub>3</sub>, 414 –439 nm for CuO, and a slightly red-shifted, intensified band at 435 nm for the Mn<sub>2</sub>O<sub>3</sub>/CuO composite. The corresponding CIE 1931 chromaticity coordinates (x ≈ 0.31, y ≈ 0.58) confirm a vivid green emission region, indicating improved color purity and radiative efficiency. These results demonstrate that coupling Mn<sub>2</sub>O<sub>3</sub> with CuO tailors the electronic band alignment, suppresses non-radiative losses, and promotes strong visible luminescence, making the Mn<sub>2</sub>O<sub>3</sub>/CuO nanocomposite a promising candidate for green light - emitting and optoelectronic devices.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"132 3","pages":""},"PeriodicalIF":2.8,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s00339-026-09346-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146099252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}