Effect of oxygen on the discharge characteristics of argon doped ethanol plasma jet and its application in surface modification of polyimide films

Plasma Sources Science and Technology Pub Date : 2024-09-05 DOI:10.1088/1361-6595/ad716b

Jianqiang Jiao, Wenjie Xia, Jinxin Wu, Bin He, Hao Tian, Yifan Liu, Guizhi Xu

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Abstract

Doping a small amount of ethanol gas (EtOH) in argon can change the argon plasma jet from filamentary discharge mode to diffuse discharge mode, and further doping of trace oxygen can significantly enhance the composition and content of oxygen-containing active particles in the argon plasma. Based on this, the discharge characteristics of Ar + EtOH plasma jet under different concentrations of oxygen doping and its effect on the surface modification effect of polyimide (PI) films were investigated in this paper. It was found that the discharge characteristics of Ar + EtOH + O₂ plasma jet deteriorate with the increase of oxygen doping concentration, but the oxygen doping concentration of 0–4000 ppm can still be stable, diffuse and the gas temperature is close to room temperature. Through the water contact angle (WCA) measurement and peel strength test, it was found that when the oxygen doping concentration was 800 ppm, the Ar + EtOH + O₂ plasma jet treatment for 180 s had the best effect on the improvement of surface wettability and adhesion of the PI films, and the WCA was reduced from ∼71.9° to ∼17.6°. At the same time, the peel strength was increased from 122 N m⁻¹ to 418 N m⁻¹, which is an increase of ∼243%. Combined with the material characterization analysis, it was found that the surface roughness of the PI films was enhanced and more C–O and C=O bonds were grafted on the surface after the Ar + EtOH + O₂ plasma jet treatment. Finally, through the two-dimensional axisymmetric argon-doped ethanol plasma jet hydrodynamic simulation analysis, it was found that when the working gas Ar + EtOH was doped with 800 ppm O₂, the number density of OH did not change much, but the number density of O₂⁻ was about 6 orders of magnitude higher than that of the non-doped O₂. The mechanism that Ar + EtOH + O₂ plasma jet could improve more wettability and bonding of PI films in a shorter treatment time was revealed.

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氧气对掺氩乙醇等离子体射流放电特性的影响及其在聚酰亚胺薄膜表面改性中的应用

在氩气中掺入少量乙醇（EtOH）可使氩等离子体射流从丝状放电模式变为弥散放电模式，而进一步掺入微量氧可显著提高氩等离子体中含氧活性粒子的成分和含量。基于此，本文研究了不同掺氧浓度下 Ar + EtOH 等离子体射流的放电特性及其对聚酰亚胺（PI）薄膜表面改性效果的影响。研究发现，Ar + EtOH + O2 等离子体射流的放电特性随氧掺杂浓度的增加而变差，但氧掺杂浓度为 0-4000 ppm 时仍能保持稳定的扩散性，且气体温度接近室温。通过水接触角（WCA）测量和剥离强度测试发现，当氧掺杂浓度为 800 ppm 时，Ar + EtOH + O2 等离子体喷射处理 180 s 对 PI 薄膜表面润湿性和附着力的改善效果最好，WCA 从 ∼71.9° 降低到 ∼17.6° 。同时，剥离强度从 122 N m-1 提高到 418 N m-1，提高了 ∼243%。结合材料表征分析发现，经 Ar + EtOH + O2 等离子喷射处理后，PI 薄膜的表面粗糙度提高，表面接枝了更多的 C-O 和 C=O 键。最后，通过二维轴对称掺氩乙醇等离子体射流流体力学模拟分析发现，当工作气体 Ar + EtOH 掺杂 800 ppm O2 时，OH 的数量密度变化不大，但 O2- 的数量密度比未掺杂 O2 时高约 6 个数量级。这揭示了 Ar + EtOH + O2 等离子射流能在更短的处理时间内改善 PI 薄膜的润湿性和结合力的机理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Plasma Sources Science and Technology

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