High-Temperature Retention Stability of Multibit Ferroelectric HfZrO$_{\text{2}}$ FinFET With SiGe/Si Superlattice Channel for Enhanced Speed and Memory Window

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-09-12 DOI:10.1109/ted.2024.3434772

Yi-Ju Yao, Tsai-Jung Lin, Chen-You Wei, Bo-Xu Chen, Yung-Teng Fang, Heng-Jia Chang, Yu-Min Fu, Guang-Li Luo, Fu-Ju Hou, Yung-Chun Wu

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具有硅基/硅超晶格通道的多位铁电 HfZrO$_{\text{2}}$ FinFET 的高温保持稳定性可提高速度和内存窗口

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.