{"title":"Active Electrode With a High-Gain a-IGZO TFT Bootstrap Amplifier for Surface Electromyography Signal Acquisition","authors":"Mingxing Tian;Aiying Guo;Xiaolin Guo;Nan Jiang;Qiang Lei;Lian Cheng;Jun Li;Jianhua Zhang","doi":"10.1109/TED.2024.3453231","DOIUrl":null,"url":null,"abstract":"Surface electromyography (sEMG) signals are crucial bioelectrical signals that offer valuable insights into muscle activity and motor control. However, sEMG signals are susceptible to interference from various sources, including environmental factors and physiological crosstalk, power noise, and motion artifacts. These interferences can compromise the quality and accuracy of the sEMG signals. The challenge remains to achieve high temporal and spatial resolution for detecting sEMG signals. In this study, novel active electrodes with a high-gain pixel-level amplifier were developed using amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) technology to collect sEMG signals. To achieve high signal gain, a wide input voltage range, and low noise, we designed a bootstrap negative feedback amplifier circuit based on a-IGZO TFTs. The active amplifier circuit exhibited a signal gain of approximately 21.9 dB at a driving voltage of 15 V and a gain bandwidth of 1.5 kHz. Compared with the traditional passive electrode, the signal-to-noise ratio (SNR) of the signal collected by the active electrode is 194% of the passive electrode, and the signal reliability is significantly improved. As a result, the active electrodes present distinct advantages in terms of stability, flexibility, and high gain. This innovation paves the way for high-quality acquisition of surface EMG signals.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6731-6737"},"PeriodicalIF":3.2000,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10677382/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Surface electromyography (sEMG) signals are crucial bioelectrical signals that offer valuable insights into muscle activity and motor control. However, sEMG signals are susceptible to interference from various sources, including environmental factors and physiological crosstalk, power noise, and motion artifacts. These interferences can compromise the quality and accuracy of the sEMG signals. The challenge remains to achieve high temporal and spatial resolution for detecting sEMG signals. In this study, novel active electrodes with a high-gain pixel-level amplifier were developed using amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) technology to collect sEMG signals. To achieve high signal gain, a wide input voltage range, and low noise, we designed a bootstrap negative feedback amplifier circuit based on a-IGZO TFTs. The active amplifier circuit exhibited a signal gain of approximately 21.9 dB at a driving voltage of 15 V and a gain bandwidth of 1.5 kHz. Compared with the traditional passive electrode, the signal-to-noise ratio (SNR) of the signal collected by the active electrode is 194% of the passive electrode, and the signal reliability is significantly improved. As a result, the active electrodes present distinct advantages in terms of stability, flexibility, and high gain. This innovation paves the way for high-quality acquisition of surface EMG signals.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.