Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-09-03 DOI:10.1109/TED.2024.3449249

Cheng Zhang;Fanyu Liu;Xiaojing Li;Siyuan Chen;Lei Shu;Lili Ding;Qiwen Zheng;Yong Xu;Xiao Yu;Jing Wan;Zhengsheng Han;Bo Li;Tianchun Ye

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Abstract

The impact of the total ionizing dose (TID) on low leakage electrostatic discharge (ESD) protection devices fabricated on the 180-nm double silicon on insulator (DSOI) technology is investigated through experiments and numerical simulations. The devices under tests (DUTs) are MOS-DIO, MOS-SCR, and gate-grounded NMOSFET (GGNMOS). The transmission line pulse (TLP) measurements were carried out before and right after ⁶⁰ Co gamma ray irradiation. The results show that the radiation-induced charges and traps mainly located in the top buried oxide (BOX1) can lead to deterioration of ESD characteristics, such as leakage and triggering voltage. After being irradiated to a dose of 300 krad(Si), the leakage of GGNMOS increases by about three orders of magnitude, and in addition, its snapback characteristic vanishes. Radiation hardness on DSOI-based ESD devices is analyzed based on experiment and simulation results, which implies that the negative voltage on back-gate electrode can mitigate the deterioration of ESD characteristics caused due to irradiation.

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采用双 SOI 技术制造的低漏电 ESD 器件的总电离剂量效应和辐射硬度分析

通过实验和数值模拟，研究了总电离剂量（TID）对在 180 纳米双绝缘体硅（DSOI）技术上制造的低漏电静电放电（ESD）保护器件的影响。被测器件（DUT）包括 MOS-DIO、MOS-SCR 和栅极接地 NMOSFET (GGNMOS)。在 60Co 伽马射线辐照前后进行了传输线脉冲 (TLP) 测量。结果表明，辐照诱导的电荷和陷阱主要位于顶部掩埋氧化物（BOX1），会导致漏电和触发电压等 ESD 特性恶化。在受到 300 krad（Si）剂量的辐照后，GGNMOS 的漏电增加了约三个数量级，此外，它的快回特性也消失了。根据实验和仿真结果分析了基于 DSOI 的 ESD 器件的辐射硬度，这意味着背栅电极上的负电压可以缓解辐照造成的 ESD 特性恶化。

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.